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Deppe, D. G., Nam, D. W., Holonyak, N., Hsieh, K. C., Baker, J. E., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1988) Impurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures. Applied Physics Letters, 52 (17). 1413-1415 doi:10.1063/1.99132

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Reference TypeJournal (article/letter/editorial)
TitleImpurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures
JournalApplied Physics Letters
AuthorsDeppe, D. G.Author
Nam, D. W.Author
Holonyak, N.Author
Hsieh, K. C.Author
Baker, J. E.Author
Kuo, C. P.Author
Fletcher, R. M.Author
Osentowski, T. D.Author
Craford, M. G.Author
Year1988 (April 25)Volume52
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99132Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482860Long-form Identifiermindat:1:5:8482860:4
GUID0
Full ReferenceDeppe, D. G., Nam, D. W., Holonyak, N., Hsieh, K. C., Baker, J. E., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1988) Impurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures. Applied Physics Letters, 52 (17). 1413-1415 doi:10.1063/1.99132
Plain TextDeppe, D. G., Nam, D. W., Holonyak, N., Hsieh, K. C., Baker, J. E., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1988) Impurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures. Applied Physics Letters, 52 (17). 1413-1415 doi:10.1063/1.99132
In(1988, April) Applied Physics Letters Vol. 52 (17) AIP Publishing

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Dallesasse, J. M., Plano, W. E., Nam, D. W., Hsieh, K. C., Baker, J. E., Holonyak, N., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1989) Impurity‐induced layer disordering in In0.5(AlxGa1−x)0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers. Journal of Applied Physics, 66 (2). 482-487 doi:10.1063/1.343562
Nam, D. W., Deppe, D. G., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1988) Short‐wavelength (∼625 nm) room‐temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures. Applied Physics Letters, 52 (16). 1329-1331 doi:10.1063/1.99149
Nam, D. W., Holonyak, N., Hsieh, K. C., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1989) Photopumped phonon‐assisted laser operation (77 K) of In0.5(AlxGa1−x)0.5P quantum well heterostructures. Applied Physics Letters, 54 (24). 2446-2448 doi:10.1063/1.101067
Dallesasse, J. M., Nam, D. W., Deppe, D. G., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1988) Short‐wavelength (≲6400 Å) room‐temperature continuous operation ofp‐nIn0.5(AlxGa1−x)0.5P quantum well lasers. Applied Physics Letters, 53 (19). 1826-1828 doi:10.1063/1.100388
Deppe, D. G., Plano, W. E., Baker, J. E., Holonyak, N., Ludowise, M. J., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1988) Comparison of SiIII‐SiVand SiIII‐VIIIdiffusion models in III‐V heterostructures lattice matched to GaAs. Applied Physics Letters, 53 (22). 2211-2213 doi:10.1063/1.100284
Deppe, D. G., Holonyak, N., Plano, W. E., Robbins, V. M., Dallesasse, J. M., Hsieh, K. C., Baker, J. E. (1988) Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures. Journal of Applied Physics, 64 (4). 1838-1844 doi:10.1063/1.341759
Dallesasse, J. M., El‐Zein, N., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1990) Hydrogenation‐defined stripe‐geometry In0.5(AlxGa1−x)0.5P quantum‐well lasers. Journal of Applied Physics, 68 (11). 5871-5873 doi:10.1063/1.346962
Kish, F. A., Caracci, S. J., Holonyak, N., Dallesasse, J. M., Sugg, A. R., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1991) Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes. Applied Physics Letters, 59 (3). 354-356 doi:10.1063/1.105593
Kish, F. A., Steranka, F. M., DeFevere, D. C., Vanderwater, D. A., Park, K. G., Kuo, C. P., Osentowski, T. D., Peanasky, M. J., Yu, J. G., Fletcher, R. M., Steigerwald, D. A., Craford, M. G., Robbins, V. M. (1994) Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes. Applied Physics Letters, 64 (21). 2839-2841 doi:10.1063/1.111442
Deppe, D. G., Holonyak, N., Hsieh, K. C., Nam, D. W., Plano, W. E., Matyi, R. J., Shichijo, H. (1988) Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si. Applied Physics Letters, 52 (21). 1812-1814 doi:10.1063/1.99633
Kish, F. A., Caracci, S. J., Maranowski, S. A., Holonyak, N., Hsieh, K. C., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1992) Planar native‐oxide buried‐mesa AlxGa1−xAs‐In0.5(AlyGa1−y)0.5P‐ In0.5(AlzGa1−z)0.5P visible‐spectrum laser diodes. Journal of Applied Physics, 71 (6). 2521-2525 doi:10.1063/1.351067
 
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