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Ohmi, T., Saito, T., Shibata, T., Nitta, T. (1988) Room‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process. Applied Physics Letters, 52 (26). 2236-2238 doi:10.1063/1.99542

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Reference TypeJournal (article/letter/editorial)
TitleRoom‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process
JournalApplied Physics Letters
AuthorsOhmi, T.Author
Saito, T.Author
Shibata, T.Author
Nitta, T.Author
Year1988 (June 27)Volume52
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.99542Search in ResearchGate
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Mindat Ref. ID8483492Long-form Identifiermindat:1:5:8483492:4
GUID0
Full ReferenceOhmi, T., Saito, T., Shibata, T., Nitta, T. (1988) Room‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process. Applied Physics Letters, 52 (26). 2236-2238 doi:10.1063/1.99542
Plain TextOhmi, T., Saito, T., Shibata, T., Nitta, T. (1988) Room‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process. Applied Physics Letters, 52 (26). 2236-2238 doi:10.1063/1.99542
In(1988, June) Applied Physics Letters Vol. 52 (26) AIP Publishing

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Ohmi, T., Ichikawa, T., Shibata, T., Matsudo, K., Iwabuchi, H. (1988) Insitusubstrate‐surface cleaning for very low temperature silicon epitaxy by low‐kinetic‐energy particle bombardment. Applied Physics Letters, 53 (1). 45-47 doi:10.1063/1.100121
Ohmi, T., Ichikawa, T., Shibata, T., Iwabuchi, H. (1989) Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process. Applied Physics Letters, 54 (6). 523-525 doi:10.1063/1.100919
Ohmi, T., Matsudo, K., Shibata, T., Ichikawa, T., Iwabuchi, H. (1988) Low‐temperature silicon epitaxy by low‐energy bias sputtering. Applied Physics Letters, 53 (5). 364-366 doi:10.1063/1.99914
Takewaki, T., Yamada, H., Shibata, T., Ohmi, T., Nitta, T. (1995) Formation of giant-grain copper interconnects by a low-energy ion bombardment process for high-speed ULSIs. Materials Chemistry and Physics, 41. 182-191 doi:10.1016/0254-0584(95)01512-4
Ishihara, Y., Okita, A., Yoshikawa, K., Shibata, T., Ohmi, T., Nitta, T., Sugiura, J., Ohwada, N. (1989) Formation of low reverse current ion‐implantedn+pjunctions by low‐temperature annealing. Applied Physics Letters, 55 (10). 966-968 doi:10.1063/1.101691
Nitta, T., Ohmi, T., Ishihara, Y., Okita, A., Shibata, T., Sugiura, J., Ohwada, N. (1990) Reverse‐bias current reduction in low‐temperature‐annealed siliconpnjunctions by ultraclean ion‐implantation technology. Journal of Applied Physics, 67 (12). 7404-7412 doi:10.1063/1.344529
Ohmi, Tadahiro, Iwabuchi, Hiroshi, Shibata, Tadashi, Ichikawa, Takeshi (1989) Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process. Applied Physics Letters, 54 (3). 253-255 doi:10.1063/1.100981
Ohmi, T., Ichikawa, T., Iwabuchi, H., Shibata, T. (1989) Formation of device‐grade epitaxial silicon films at extremely low temperatures by low‐energy bias sputtering. Journal of Applied Physics, 66 (10). 4756-4766 doi:10.1063/1.343786
Ohmi, Tadahiro, Matsudo, Kiyohiko, Shibata, Tadashi, Ichikawa, Takeshi, Iwabuchi, Hiroshi (1988) Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle Bombardment. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2146
Fukatsu, S., Ishikawa, Yukari, Saito, T., Shibata, N. (1998) SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen. Applied Physics Letters, 72 (26). 3485-3487 doi:10.1063/1.121674
Ohmi, T., Morita, M., Kochi, T., Kosugi, M., Kumagai, H., Itoh, M. (1988) High‐rate growth at low temperatures by free‐jet molecular flow: Surface‐reaction film‐formation technology. Applied Physics Letters, 52 (14). 1173-1175 doi:10.1063/1.99196
 
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