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Ohmi, T., Morita, M., Kochi, T., Kosugi, M., Kumagai, H., Itoh, M. (1988) High‐rate growth at low temperatures by free‐jet molecular flow: Surface‐reaction film‐formation technology. Applied Physics Letters, 52 (14). 1173-1175 doi:10.1063/1.99196

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐rate growth at low temperatures by free‐jet molecular flow: Surface‐reaction film‐formation technology
JournalApplied Physics Letters
AuthorsOhmi, T.Author
Morita, M.Author
Kochi, T.Author
Kosugi, M.Author
Kumagai, H.Author
Itoh, M.Author
Year1988 (April 4)Volume52
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.99196Search in ResearchGate
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Mindat Ref. ID8482692Long-form Identifiermindat:1:5:8482692:5
GUID0
Full ReferenceOhmi, T., Morita, M., Kochi, T., Kosugi, M., Kumagai, H., Itoh, M. (1988) High‐rate growth at low temperatures by free‐jet molecular flow: Surface‐reaction film‐formation technology. Applied Physics Letters, 52 (14). 1173-1175 doi:10.1063/1.99196
Plain TextOhmi, T., Morita, M., Kochi, T., Kosugi, M., Kumagai, H., Itoh, M. (1988) High‐rate growth at low temperatures by free‐jet molecular flow: Surface‐reaction film‐formation technology. Applied Physics Letters, 52 (14). 1173-1175 doi:10.1063/1.99196
In(1988, April) Applied Physics Letters Vol. 52 (14) AIP Publishing

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Ohmi, T. (1989) Surface Reaction Film Formation by Si[sub 2]H[sub 6] Transfer at Molecular Flow. Journal of the Electrochemical Society, 136. 3455pp. doi:10.1149/1.2096470
Ohmi, T., Morita, M., Teramoto, A., Makihara, K., Tseng, K. S. (1992) Very thin oxide film on a silicon surface by ultraclean oxidation. Applied Physics Letters, 60 (17). 2126-2128 doi:10.1063/1.107084
Morita, M., Ohmi, T., Hasegawa, E., Kawakami, M., Ohwada, M. (1990) Growth of native oxide on a silicon surface. Journal of Applied Physics, 68 (3). 1272-1281 doi:10.1063/1.347181
Ohmi, T., Ichikawa, T., Iwabuchi, H., Shibata, T. (1989) Formation of device‐grade epitaxial silicon films at extremely low temperatures by low‐energy bias sputtering. Journal of Applied Physics, 66 (10). 4756-4766 doi:10.1063/1.343786
Shayegan, M., Goldman, V. J., Jiang, C., Sajoto, T., Santos, M. (1988) Growth of low‐density two‐dimensional electron system with very high mobility by molecular beam epitaxy. Applied Physics Letters, 52 (13). 1086-1088 doi:10.1063/1.99219
Ohmi, T., Ichikawa, T., Shibata, T., Matsudo, K., Iwabuchi, H. (1988) Insitusubstrate‐surface cleaning for very low temperature silicon epitaxy by low‐kinetic‐energy particle bombardment. Applied Physics Letters, 53 (1). 45-47 doi:10.1063/1.100121
Ohmi, T., Matsudo, K., Shibata, T., Ichikawa, T., Iwabuchi, H. (1988) Low‐temperature silicon epitaxy by low‐energy bias sputtering. Applied Physics Letters, 53 (5). 364-366 doi:10.1063/1.99914
Cheng, H., DePuydt, J. M., Potts, J. E., Smith, T. L. (1988) Growth ofp‐type ZnSe:Li by molecular beam epitaxy. Applied Physics Letters, 52 (2). 147-149 doi:10.1063/1.99033
Morita, M., Ohmi, T., Hasegawa, E., Kawakami, M., Suma, K. (1989) Control factor of native oxide growth on silicon in air or in ultrapure water. Applied Physics Letters, 55 (6). 562-564 doi:10.1063/1.102435
Ohmi, T., Saito, T., Shibata, T., Nitta, T. (1988) Room‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process. Applied Physics Letters, 52 (26). 2236-2238 doi:10.1063/1.99542
Nakashima, S., Kitamura, T., Kato, T., Kojima, K., Kosugi, R., Okumura, H., Tsuchida, H., Ito, M. (2008) Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering. Applied Physics Letters, 93 (12). 121913pp. doi:10.1063/1.2992063
 
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