Vote for your favorite mineral in #MinCup25! - Taenite vs. Nontronite
It's a mineral found mostly in the farthest reaches of space vs one so common an exhaustive list of localities is nigh impossible as alloy #taenite faces off against clay #nontronite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Itoh, Taizoh, Abe, Takao (1988) Diffusion coefficient of a pair of nitrogen atoms in float‐zone silicon. Applied Physics Letters, 53 (1). 39-41 doi:10.1063/1.100116

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleDiffusion coefficient of a pair of nitrogen atoms in float‐zone silicon
JournalApplied Physics Letters
AuthorsItoh, TaizohAuthor
Abe, TakaoAuthor
Year1988 (July 4)Volume53
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100116Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483954Long-form Identifiermindat:1:5:8483954:9
GUID0
Full ReferenceItoh, Taizoh, Abe, Takao (1988) Diffusion coefficient of a pair of nitrogen atoms in float‐zone silicon. Applied Physics Letters, 53 (1). 39-41 doi:10.1063/1.100116
Plain TextItoh, Taizoh, Abe, Takao (1988) Diffusion coefficient of a pair of nitrogen atoms in float‐zone silicon. Applied Physics Letters, 53 (1). 39-41 doi:10.1063/1.100116
In(1988, July) Applied Physics Letters Vol. 53 (1) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Itoh, Yoshiko, Nozaki, Tadashi, Masui, Tsumoru, Abe, Takao (1985) Calibration curve for infrared spectrophotometry of nitrogen in silicon. Applied Physics Letters, 47 (5). 488-489 doi:10.1063/1.96101
Nauka, K., Goorsky, M. S., Gatos, H. C., Lagowski, J. (1985) Nitrogen‐related deep electron traps in float zone silicon. Applied Physics Letters, 47 (12). 1341-1343 doi:10.1063/1.96274
Hocine, S., Mathiot, D. (1988) Titanium diffusion in silicon. Applied Physics Letters, 53 (14). 1269-1271 doi:10.1063/1.100446
Orlowski, M. (1988) Unified model for impurity diffusion in silicon. Applied Physics Letters, 53 (14). 1323-1325 doi:10.1063/1.99975
Itoh, Tadatsugu, Ohdomari, Iwao (1970) Analysis of Radiation‐Enhanced Diffusion of Aluminum in Silicon. Journal of Applied Physics, 41 (1). 434-436 doi:10.1063/1.1658370
Suezawa, Masashi, Sumino, Koji, Harada, Hirofumi, Abe, Takao (1988) The Nature of Nitrogen-Oxygen Complexes in Silicon. Japanese Journal of Applied Physics, 27. 62-67 doi:10.1143/jjap.27.62
Gay, N., Martinuzzi, S. (1997) External self-gettering of nickel in float zone silicon wafers. Applied Physics Letters, 70 (19). 2568-2570 doi:10.1063/1.118921
Inoue, Naohisa, Kawamura, Yuichi (2018) Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation. Journal of Applied Physics, 123 (18). 185701pp. doi:10.1063/1.5011224
Seager, C. H., Anderson, R. A. (1988) Real‐time observations of hydrogen drift and diffusion in silicon. Applied Physics Letters, 53 (13). 1181-1183 doi:10.1063/1.100015
Oates, A. S., Lin, W. (1988) Temperature dependence of interstitial oxygen diffusion in antimony‐doped Czochralski silicon. Applied Physics Letters, 53 (26). 2659-2660 doi:10.1063/1.100186
McHugo, Scott A., Sawyer, William D. (1993) Impurity decoration of defects in float zone and polycrystalline silicon via chemomechanical polishing. Applied Physics Letters, 62 (20). 2519-2521 doi:10.1063/1.109308
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 15, 2025 04:16:09
Go to top of page