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Wada, Takao, Maeda, Yoshinobu (1988) Ordering of Al0.5Ga0.5P by high‐energy electron irradiation. Applied Physics Letters, 53 (17). 1596-1598 doi:10.1063/1.99922

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Reference TypeJournal (article/letter/editorial)
TitleOrdering of Al0.5Ga0.5P by high‐energy electron irradiation
JournalApplied Physics Letters
AuthorsWada, TakaoAuthor
Maeda, YoshinobuAuthor
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99922Search in ResearchGate
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Mindat Ref. ID8484539Long-form Identifiermindat:1:5:8484539:1
GUID0
Full ReferenceWada, Takao, Maeda, Yoshinobu (1988) Ordering of Al0.5Ga0.5P by high‐energy electron irradiation. Applied Physics Letters, 53 (17). 1596-1598 doi:10.1063/1.99922
Plain TextWada, Takao, Maeda, Yoshinobu (1988) Ordering of Al0.5Ga0.5P by high‐energy electron irradiation. Applied Physics Letters, 53 (17). 1596-1598 doi:10.1063/1.99922
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Wada, Takao, Maeda, Yoshinobu (1988) New type of solid phase epitaxy of alloy semiconductors by electron beam irradiation. Applied Physics Letters, 52 (1). 60-62 doi:10.1063/1.99318
Wada, Takao, Maeda, Yoshinobu (1987) Electron beam epitaxy of AlxGa1−xP (a new type of solid phase epitaxy produced by a high‐energy electron beam). Applied Physics Letters, 51 (25). 2130-2132 doi:10.1063/1.98969
Wada, Takao (1988) Electron beam oxidation of semiconductors (one mechanism of electron beam processes). Applied Physics Letters, 52 (13). 1056-1058 doi:10.1063/1.99209
Wada, Takao, Yasuda, Kyoichiro, Ikuta, Shiro, Takeda, Michihiko, Masuda, Haruho (1977) Complex defects introduced into Si by high‐energy electron irradiation: Production rates of defects in n‐Si. Journal of Applied Physics, 48 (6). 2145-2152 doi:10.1063/1.324032
Wada, Takao, Maeda, Yoshinobu, Ichimura, Masaya (1989) A new type of solid phase epitaxy of AlxGa1−xSb in evaporated Al/GaSb substrate by electron-beam irradiation (electron-beam epitaxy). Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 476-479 doi:10.1016/0168-583x(89)90829-x
Yoshinobu, Tatsuo, Izumikawa, Iwao, Mitsui, Hideaki, Fuyuki, Takashi, Matsunami, Hiroyuki (1991) Dynamic reflection high‐energy electron diffraction observation of 3C‐SiC(001) surface reconstruction under Si2H6beam irradiation. Applied Physics Letters, 59 (22). 2844-2846 doi:10.1063/1.105852
Wada, T., Suzuki, N., Maeda, T., Maeda, A., Uchida, S., Uchinokura, K., Tanaka, S. (1988) High transition temperature superconductor LaBa2Cu3O7−ywith zero resistance at 92 K. Applied Physics Letters, 52 (23). 1989-1991 doi:10.1063/1.99744
Wada, Takao, Maeda, Y., Yamada, T., Kojima, Soichiro, Ichimura, Masaya (1991) Electron-Beam Epitaxy and Superdiffusion in Alloy Semiconductors by Electron-Beam Irradiation. Materials Science Forum, 38. 1193-1198 doi:10.4028/www.scientific.net/msf.38-41.1193
Timsit, R. S., Gallerneault, C., Barry, J. C., Landheer, D. (1988) Detection of local atomic ordering in high‐resolution electron images of quasiamorphous materials. Applied Physics Letters, 53 (1). 28-30 doi:10.1063/1.100112
Wada, Toshimi, Kanayama, Toshihiko, Ichimura, Shingo, Sugiyama, Yoshinobu, Komuro, Masanori (1994) Annealing Behavior of Irradiation-Induced Damage in an AlGaAs/GaAs Heterostructure by Low-Energy Electron Beam. Japanese Journal of Applied Physics, 33. 7228-7231 doi:10.1143/jjap.33.7228
Bai, K. H., Chang, H. Y., Uhm, H. S. (2001) Electron temperature analysis of two-gas-species inductively coupled plasma. Applied Physics Letters, 79 (11). 1596-1598 doi:10.1063/1.1404135
 
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