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Yoshinobu, Tatsuo, Izumikawa, Iwao, Mitsui, Hideaki, Fuyuki, Takashi, Matsunami, Hiroyuki (1991) Dynamic reflection high‐energy electron diffraction observation of 3C‐SiC(001) surface reconstruction under Si2H6beam irradiation. Applied Physics Letters, 59 (22). 2844-2846 doi:10.1063/1.105852

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Reference TypeJournal (article/letter/editorial)
TitleDynamic reflection high‐energy electron diffraction observation of 3C‐SiC(001) surface reconstruction under Si2H6beam irradiation
JournalApplied Physics Letters
AuthorsYoshinobu, TatsuoAuthor
Izumikawa, IwaoAuthor
Mitsui, HideakiAuthor
Fuyuki, TakashiAuthor
Matsunami, HiroyukiAuthor
Year1991 (November 25)Volume59
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.105852Search in ResearchGate
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Mindat Ref. ID8496544Long-form Identifiermindat:1:5:8496544:6
GUID0
Full ReferenceYoshinobu, Tatsuo, Izumikawa, Iwao, Mitsui, Hideaki, Fuyuki, Takashi, Matsunami, Hiroyuki (1991) Dynamic reflection high‐energy electron diffraction observation of 3C‐SiC(001) surface reconstruction under Si2H6beam irradiation. Applied Physics Letters, 59 (22). 2844-2846 doi:10.1063/1.105852
Plain TextYoshinobu, Tatsuo, Izumikawa, Iwao, Mitsui, Hideaki, Fuyuki, Takashi, Matsunami, Hiroyuki (1991) Dynamic reflection high‐energy electron diffraction observation of 3C‐SiC(001) surface reconstruction under Si2H6beam irradiation. Applied Physics Letters, 59 (22). 2844-2846 doi:10.1063/1.105852
In(1991, November) Applied Physics Letters Vol. 59 (22) AIP Publishing

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Yoshinobu, Tatsuo, Mitsui, Hideaki, Izumikawa, Iwao, Fuyuki, Takashi, Matsunami, Hiroyuki (1992) Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy. Applied Physics Letters, 60 (7). 824-826 doi:10.1063/1.107430
Yoshinobu, Tatsuo, Mitsui, Hideaki, Tarui, Yoichiro, Fuyuki, Takashi, Matsunami, Hiroyuki (1992) Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy. Journal of Applied Physics, 72 (5). 2006-2013 doi:10.1063/1.351628
Yoshinobu, Tatsuo, Mitsui, Hideaki, Tarui, Yoichiro, Fuyuki, Takashi, Matsunami, Hiroyuki (1992) Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1580
Hatayama, Tomoaki, Fuyuki, Takashi, Matsunami, Hiroyuki (1996) Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 35. 5255-5260 doi:10.1143/jjap.35.5255
Yoshinobu, Tatsuo, Fuyuki, Takashi, Matsunami, Hiroyuki (1991) Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1086
Hatayama, Tomoaki, Tanaka, Norihiro, Fuyuki, Takashi, Matsunami, Hiroyuki (1997) Initial stage for heteroepitaxy of 3C–SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy. Applied Physics Letters, 70 (11). 1411-1413 doi:10.1063/1.118569
Hashimoto, Tadao, Yoshimoto, Masahiro, Vaccaro, Pablo O., Matsunami, Hiroyuki (1993) Reflection high‐energy electron diffraction observation of surface reaction triggered by pulsed laser irradiation during GaP growth in chemical beam epitaxy. Applied Physics Letters, 63 (15). 2097-2099 doi:10.1063/1.110604
Hatayama, Tomoaki, Fuyuki, Takashi, Matsunami, Hiroyuki (1995) Quantitative Analysis for CH$_{\bf 3}$ Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l1117
Yoshinobu, Tatsuo, Fuyuki, Takashi, Matsunami, Hiroyuki (1992) Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si2H6. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1213
Iwasaki, Hiroshi, Inoue, Shinji, Yoshinobu, Tatsuo, Tarutani, Masayoshi, Takai, Yoshizo, Shimizu, Ryuichi, Ito, Akira, Kimoto, Tsunenobu, Matsunami, Hiroyuki (1993) 4H‐SiC/6H‐SiC interface structures studied by high‐resolution transmission electron microscopy. Applied Physics Letters, 63 (19). 2636-2637 doi:10.1063/1.110405
Fuyuki, Takashi, Nakayama, Michiaki, Yoshinobu, Tatsuo, Shiomi, Hiromu, Matsunami, Hiroyuki (1989) Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure. Journal of Crystal Growth, 95 (1). 461-463 doi:10.1016/0022-0248(89)90442-9
 
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