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Hong, S. N., Ruggles, G. A., Paulos, J. J., Wortman, J. J., Ozturk, M. C. (1988) Formation of ultrashallowp+‐njunctions by low‐energy boron implantation using a modified ion implanter. Applied Physics Letters, 53 (18). 1741-1743 doi:10.1063/1.100470

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Reference TypeJournal (article/letter/editorial)
TitleFormation of ultrashallowp+‐njunctions by low‐energy boron implantation using a modified ion implanter
JournalApplied Physics Letters
AuthorsHong, S. N.Author
Ruggles, G. A.Author
Paulos, J. J.Author
Wortman, J. J.Author
Ozturk, M. C.Author
Year1988 (October 31)Volume53
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.100470Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484589Long-form Identifiermindat:1:5:8484589:6
GUID0
Full ReferenceHong, S. N., Ruggles, G. A., Paulos, J. J., Wortman, J. J., Ozturk, M. C. (1988) Formation of ultrashallowp+‐njunctions by low‐energy boron implantation using a modified ion implanter. Applied Physics Letters, 53 (18). 1741-1743 doi:10.1063/1.100470
Plain TextHong, S. N., Ruggles, G. A., Paulos, J. J., Wortman, J. J., Ozturk, M. C. (1988) Formation of ultrashallowp+‐njunctions by low‐energy boron implantation using a modified ion implanter. Applied Physics Letters, 53 (18). 1741-1743 doi:10.1063/1.100470
In(1988, October) Applied Physics Letters Vol. 53 (18) AIP Publishing

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Myers, E., Ozturk, M. C., Wortman, J. J., Hren, J. J. (1988) Low‐temperature extended defect removal following low‐energy ion implantation. Applied Physics Letters, 53 (3). 228-230 doi:10.1063/1.100584
Bousetta, A., van den Berg, J. A., Armour, D. G., Zalm, P. C. (1991) Si ultrashallowp+njunctions using low‐energy boron implantation. Applied Physics Letters, 58 (15). 1626-1628 doi:10.1063/1.105146
Ozturk, M. C., Wortman, J. J. (1988) Electrical properties of shallowp+‐njunctions formed by BF2ion implantation in germanium preamorphized silicon. Applied Physics Letters, 52 (4). 281-283 doi:10.1063/1.99494
Ozturk, M. C., Wortman, J. J., Fair, R. B. (1988) Very shallowp+‐njunction formation by low‐energy BF+2ion implantation into crystalline and germanium preamorphized silicon. Applied Physics Letters, 52 (12). 963-965 doi:10.1063/1.99242
Nastasi, M., Tesmer, J. R., Hollander, M. G., Smith, J. F., Maggiore, C. J. (1988) Formation of YBa2Cu3O7superconducting films by ion implantation. Applied Physics Letters, 52 (20). 1729-1731 doi:10.1063/1.99714
Tendys, J., Donnelly, I. J., Kenny, M. J., Pollock, J. T. A. (1988) Plasma immersion ion implantation using plasmas generated by radio frequency techniques. Applied Physics Letters, 53 (22). 2143-2145 doi:10.1063/1.100299
Opyd, W. G., Gibbons, J. F., Mardinly, A. J. (1988) Precipitation of impurities in GaAs amorphized by ion implantation. Applied Physics Letters, 53 (16). 1515-1517 doi:10.1063/1.99942
Lu, D., Ruggles, G. A., Wortman, J. J. (1988) Effects of processing conditions on negative bias temperature instability in metal‐oxide‐semiconductor structures. Applied Physics Letters, 52 (16). 1344-1346 doi:10.1063/1.99154
Michel, A. E., Kastl, R. H., Mader, S. R., Masters, B. J., Gardner, J. A. (1984) Channeling in low energy boron ion implantation. Applied Physics Letters, 44 (4). 404-406 doi:10.1063/1.94790
Paquette, M., Beauvais, J., Beerens, J., Poole, P. J., Charbonneau, S., Miner, C. J., Blaauw, C. (1997) Blueshifting of InGaAsP/InP laser diodes by low-energy ion implantation. Applied Physics Letters, 71 (26). 3749-3751 doi:10.1063/1.120407
Shannon, J. M. (1974) Reducing the effective height of a Schottky barrier using low‐energy ion implantation. Applied Physics Letters, 24 (8). 369-371 doi:10.1063/1.1655220
 
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