Vote for your favorite mineral in #MinCup25! - Carpathite vs. Tugtupite
Battle of mineralogical oddities as organic mineral #carpathite battles against vs #tugtupite, a mineral that looks like reindeer blood!
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Lu, D., Ruggles, G. A., Wortman, J. J. (1988) Effects of processing conditions on negative bias temperature instability in metal‐oxide‐semiconductor structures. Applied Physics Letters, 52 (16). 1344-1346 doi:10.1063/1.99154

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEffects of processing conditions on negative bias temperature instability in metal‐oxide‐semiconductor structures
JournalApplied Physics Letters
AuthorsLu, D.Author
Ruggles, G. A.Author
Wortman, J. J.Author
Year1988 (April 18)Volume52
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.99154Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482804Long-form Identifiermindat:1:5:8482804:8
GUID0
Full ReferenceLu, D., Ruggles, G. A., Wortman, J. J. (1988) Effects of processing conditions on negative bias temperature instability in metal‐oxide‐semiconductor structures. Applied Physics Letters, 52 (16). 1344-1346 doi:10.1063/1.99154
Plain TextLu, D., Ruggles, G. A., Wortman, J. J. (1988) Effects of processing conditions on negative bias temperature instability in metal‐oxide‐semiconductor structures. Applied Physics Letters, 52 (16). 1344-1346 doi:10.1063/1.99154
In(1988, April) Applied Physics Letters Vol. 52 (16) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Marinella, M. J., Schroder, D. K., Isaacs-Smith, T., Ahyi, A. C., Williams, J. R., Chung, G. Y., Wan, J. W., Loboda, M. J. (2007) Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors. Applied Physics Letters, 90 (25). 253508pp. doi:10.1063/1.2748327
Yonamoto, Yoshiki, Akamatsu, Naotoshi (2011) Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor. Applied Physics Letters, 98 (10). 103513pp. doi:10.1063/1.3559223
Ershov, M., Saxena, S., Karbasi, H., Winters, S., Minehane, S., Babcock, J., Lindley, R., Clifton, P., Redford, M., Shibkov, A. (2003) Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 83 (8). 1647-1649 doi:10.1063/1.1604480
Chen, Shih-Chang, Chien, Chao-Hsin, Lou, Jen-Chung (2007) Anomalous negative bias temperature instability behavior in p-channel metal-oxide-semiconductor field-effect transistors with HfSiON∕SiO2 gate stack. Applied Physics Letters, 90 (23). 233505pp. doi:10.1063/1.2745649
Zhu, Shiyang, Nakajima, Anri, Ohashi, Takuo, Miyake, Hideharu (2006) Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics. Journal of Applied Physics, 99 (6). 64510pp. doi:10.1063/1.2183409
Avni, E., Shappir, J. (1988) Modeling of charge‐injection effects in metal‐oxide‐semiconductor structures. Journal of Applied Physics, 64 (2). 734-742 doi:10.1063/1.341942
Zvanut, M. E., Feigl, F. J., Zook, J. D. (1988) A defect relaxation model for bias instabilities in metal‐oxide‐semiconductor capacitors. Journal of Applied Physics, 64 (4). 2221-2223 doi:10.1063/1.341688
Hong, S. N., Ruggles, G. A., Paulos, J. J., Wortman, J. J., Ozturk, M. C. (1988) Formation of ultrashallowp+‐njunctions by low‐energy boron implantation using a modified ion implanter. Applied Physics Letters, 53 (18). 1741-1743 doi:10.1063/1.100470
Ettisserry, D. P., Goldsman, N., Akturk, A., Lelis, A. J. (2015) Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 118 (4). 44507pp. doi:10.1063/1.4927619
Choi, Changhwan, Lee, Jack C. (2011) Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO2 gate dielectrics. Applied Physics Letters, 98 (6). 63504pp. doi:10.1063/1.3541879
Schwank, J. R., Fleetwood, D. M. (1988) Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 53 (9). 770-772 doi:10.1063/1.99828
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 20, 2025 13:23:08
Go to top of page