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Wittmaack, K., Menzel, N. (1988) Significantly extended analytical potential of Rutherford backscattering spectrometry byinsitucombination with low‐energy sputtering. Applied Physics Letters, 53 (18). 1708-1710 doi:10.1063/1.99801

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Reference TypeJournal (article/letter/editorial)
TitleSignificantly extended analytical potential of Rutherford backscattering spectrometry byinsitucombination with low‐energy sputtering
JournalApplied Physics Letters
AuthorsWittmaack, K.Author
Menzel, N.Author
Year1988 (October 31)Volume53
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99801Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484625Long-form Identifiermindat:1:5:8484625:7
GUID0
Full ReferenceWittmaack, K., Menzel, N. (1988) Significantly extended analytical potential of Rutherford backscattering spectrometry byinsitucombination with low‐energy sputtering. Applied Physics Letters, 53 (18). 1708-1710 doi:10.1063/1.99801
Plain TextWittmaack, K., Menzel, N. (1988) Significantly extended analytical potential of Rutherford backscattering spectrometry byinsitucombination with low‐energy sputtering. Applied Physics Letters, 53 (18). 1708-1710 doi:10.1063/1.99801
In(1988, October) Applied Physics Letters Vol. 53 (18) AIP Publishing

See Also

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Liau, Z. L. (1980) Subtraction of signal overlaps in Rutherford backscattering spectrometry. Applied Physics Letters, 36 (1). 51-53 doi:10.1063/1.91313
Wittmaack, K., Menzel, N. (1987) Exceptionally pronounced redistribution of silver in oxygen bombarded silicon. Applied Physics Letters, 50 (13). 815-817 doi:10.1063/1.98053
Ohmi, T., Matsudo, K., Shibata, T., Ichikawa, T., Iwabuchi, H. (1988) Low‐temperature silicon epitaxy by low‐energy bias sputtering. Applied Physics Letters, 53 (5). 364-366 doi:10.1063/1.99914
Wittmaack, K. (1982) Assessment of the extent of atomic mixing from sputtering experiments. Journal of Applied Physics, 53 (7). 4817-4820 doi:10.1063/1.331356
Shao, Lin, Nastasi, Michael (2005) Methods for the accurate analysis of channeling Rutherford backscattering spectrometry. Applied Physics Letters, 87 (6). 64103pp. doi:10.1063/1.2007861
Blank, P., Wittmaack, K. (1979) Energy and fluence dependence of the sputtering yield of silicon bombarded with argon and xenon. Journal of Applied Physics, 50 (3). 1519-1528 doi:10.1063/1.326140
Buckner, J. L., Vitkavage, D. J., Irene, E. A. (1988) Ellipsometric and Rutherford backscattering characterization of low‐energy hydrogen‐, helium‐, neon‐, and argon‐bombarded silicon. Journal of Applied Physics, 63 (11). 5288-5294 doi:10.1063/1.340392
Myers, E., Ozturk, M. C., Wortman, J. J., Hren, J. J. (1988) Low‐temperature extended defect removal following low‐energy ion implantation. Applied Physics Letters, 53 (3). 228-230 doi:10.1063/1.100584
Hwang, H. L., Hwu, C. C., Liue, J. C., Lin, H. H. (1982) Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry. Applied Physics Letters, 41 (9). 844-846 doi:10.1063/1.93714
Wittmaack, K. (1996) Mass resolved low-energy ion backscattering spectrometry at target-to-projectile mass ratios near unity. Surface Science, 345 (1). 110-124 doi:10.1016/0039-6028(95)00876-4
Clegg, J. B., O’Connor, D. J. (1981) Evaluation of secondary ion mass spectrometry profile distortions using Rutherford backscattering. Applied Physics Letters, 39 (12). 997-999 doi:10.1063/1.92640
 
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