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Timans, P. J., McMahon, R. A., Ahmed, H. (1988) Time‐resolved reflectivity techniques for dynamic studies of electron beam recrystallization of silicon‐on‐insulator films. Applied Physics Letters, 53 (19). 1844-1846 doi:10.1063/1.100372

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Reference TypeJournal (article/letter/editorial)
TitleTime‐resolved reflectivity techniques for dynamic studies of electron beam recrystallization of silicon‐on‐insulator films
JournalApplied Physics Letters
AuthorsTimans, P. J.Author
McMahon, R. A.Author
Ahmed, H.Author
Year1988 (November 7)Volume53
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.100372Search in ResearchGate
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Mindat Ref. ID8484654Long-form Identifiermindat:1:5:8484654:9
GUID0
Full ReferenceTimans, P. J., McMahon, R. A., Ahmed, H. (1988) Time‐resolved reflectivity techniques for dynamic studies of electron beam recrystallization of silicon‐on‐insulator films. Applied Physics Letters, 53 (19). 1844-1846 doi:10.1063/1.100372
Plain TextTimans, P. J., McMahon, R. A., Ahmed, H. (1988) Time‐resolved reflectivity techniques for dynamic studies of electron beam recrystallization of silicon‐on‐insulator films. Applied Physics Letters, 53 (19). 1844-1846 doi:10.1063/1.100372
In(1988, November) Applied Physics Letters Vol. 53 (19) AIP Publishing

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England, J. M. C., Zissis, N., Timans, P. J., Ahmed, H. (1991) Time‐resolved reflectivity measurements of temperature distributions during swept‐line electron‐beam heating of silicon. Journal of Applied Physics, 70 (1). 389-397 doi:10.1063/1.350287
Smith, D. A., McMahon, R. A., Ahmed, H., Barfoot, K. M., Peters, T. B., Hopper, G. F., Godfrey, D. J. (1988) Scanning electron microscopy study of seeded recrystallization of silicon‐on‐insulator layers with either polycrystalline or epitaxially deposited silicon in the seed windows. Journal of Applied Physics, 63 (5). 1438-1441 doi:10.1063/1.339923
Timans, P. J., McMahon, R. A., Ahmed, H., Hopper, G. F. (1989) Temperature distributions and molten zones induced by heating with line‐shaped electron beams. Journal of Applied Physics, 66 (6). 2285-2296 doi:10.1063/1.344285
Hopper, G. F., McMahon, R. A., Barfoot, K. M. (1991) Improvement in the thickness uniformity of silicon‐on‐insulator layers formed by dual electron beam recrystallization. Journal of Applied Physics, 69 (4). 2183-2189 doi:10.1063/1.348747
Pandya, R., Martinez, A. (1988) Large‐area defect‐free silicon‐on‐insulator films by zone‐melt recrystallization. Applied Physics Letters, 52 (11). 901-903 doi:10.1063/1.99267
Rogne, H., Timans, P. J., Ahmed, H. (1996) Infrared absorption in silicon at elevated temperatures. Applied Physics Letters, 69 (15). 2190-2192 doi:10.1063/1.117161
Maby, E. W., Atwater, H. A., Keigler, A. L., Johnson, N. M. (1983) Electron‐beam‐induced current measurements in silicon‐on‐insulator films prepared by zone‐melting recrystallization. Applied Physics Letters, 43 (5). 482-484 doi:10.1063/1.94359
Takeuti, D. F., Timans, P. J., Ahmed, H. (1995) Emissivity of B‐implanted and annealed silicon. Applied Physics Letters, 67 (15). 2206-2208 doi:10.1063/1.115104
Raman, V. K., Mahmood, F., McMahon, R. A., Ahmed, H., Jeynes, C. (1988) Rapid Electron Beam Reacted Tantalum/Titanium Bilayers on Silicon. Japanese Journal of Applied Physics, 27. 2333-2339 doi:10.1143/jjap.27.2333
Bruines, J. J. P., van Hal, R. P. M., Boots, H. M. J., Polman, A., Saris, F. W. (1986) Time‐resolved reflectivity measurements during explosive crystallization of amorphous silicon. Applied Physics Letters, 49 (18). 1160-1162 doi:10.1063/1.97453
Inoue, Tomoyasu, Hamasaki, Toshihiko (1987) Direct observation of growth front movement in electron beam recrystallization of silicon layer on insulator. Applied Physics Letters, 50 (15). 971-973 doi:10.1063/1.98002
 
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