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Pandya, R., Martinez, A. (1988) Large‐area defect‐free silicon‐on‐insulator films by zone‐melt recrystallization. Applied Physics Letters, 52 (11). 901-903 doi:10.1063/1.99267

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Reference TypeJournal (article/letter/editorial)
TitleLarge‐area defect‐free silicon‐on‐insulator films by zone‐melt recrystallization
JournalApplied Physics Letters
AuthorsPandya, R.Author
Martinez, A.Author
Year1988 (March 14)Volume52
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.99267Search in ResearchGate
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Mindat Ref. ID8482513Long-form Identifiermindat:1:5:8482513:9
GUID0
Full ReferencePandya, R., Martinez, A. (1988) Large‐area defect‐free silicon‐on‐insulator films by zone‐melt recrystallization. Applied Physics Letters, 52 (11). 901-903 doi:10.1063/1.99267
Plain TextPandya, R., Martinez, A. (1988) Large‐area defect‐free silicon‐on‐insulator films by zone‐melt recrystallization. Applied Physics Letters, 52 (11). 901-903 doi:10.1063/1.99267
In(1988, March) Applied Physics Letters Vol. 52 (11) AIP Publishing

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Chen, C. K., Im, J. S. (1989) Zone‐melting recrystallization with enhanced radiative heating for preparation of subboundary‐free silicon‐on‐insulator thin films. Applied Physics Letters, 55 (12). 1238-1240 doi:10.1063/1.102465
Maby, E. W., Atwater, H. A., Keigler, A. L., Johnson, N. M. (1983) Electron‐beam‐induced current measurements in silicon‐on‐insulator films prepared by zone‐melting recrystallization. Applied Physics Letters, 43 (5). 482-484 doi:10.1063/1.94359
Timans, P. J., McMahon, R. A., Ahmed, H. (1988) Time‐resolved reflectivity techniques for dynamic studies of electron beam recrystallization of silicon‐on‐insulator films. Applied Physics Letters, 53 (19). 1844-1846 doi:10.1063/1.100372
Theunissen, M. J. J. (1990) Nondestructive Thin Film Defect Analysis of Silicon-on-Insulator Layers Made by Zone-Melt Recrystallization and Wafer Bonding. Journal of the Electrochemical Society, 137. 3975pp. doi:10.1149/1.2086341
Pfeiffer, Loren, Gelman, A. E., Jackson, K. A., West, K. W., Batstone, J. L. (1987) Subboundary‐free zone‐melt recrystallization of thin‐film silicon. Applied Physics Letters, 51 (16). 1256-1258 doi:10.1063/1.98697
Egami, Koji, Kimura, Masakazu (1984) Strong 〈100〉 texture formation of polycrystalline silicon films on amorphous insulator by laser recrystallization. Applied Physics Letters, 45 (8). 854-856 doi:10.1063/1.95425
Chen, C. K., Geis, M. W., Finn, M. C., Tsaur, B‐Y. (1986) New capping technique for zone‐melting recrystallization of silicon‐on‐insulator films. Applied Physics Letters, 48 (19). 1300-1302 doi:10.1063/1.96959
Cline, H. E. (1984) Silicon thin films formed on an insulator by recrystallization. Journal of Applied Physics, 55 (8). 2910-2915 doi:10.1063/1.333332
Evans, P. V., Smith, D. A., Thompson, C. V. (1992) Absence of electrical activity at high‐angle grain boundaries in zone‐melt‐recrystallized silicon‐on‐insulator films. Applied Physics Letters, 60 (4). 439-441 doi:10.1063/1.106627
Thompson, L. R., Collins, G. J., Stein, H. J. (1991) Electrical transport and related properties of zone‐melt‐recrystallized silicon‐on‐insulator films. Journal of Applied Physics, 69 (10). 7111-7117 doi:10.1063/1.347651
Liang, Zhongning, Mo, Dang (1988) Ellipsometric spectra of silicon‐on‐insulator wafers. Applied Physics Letters, 52 (13). 1050-1052 doi:10.1063/1.99207
 
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