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Chen, C. K., Im, J. S. (1989) Zone‐melting recrystallization with enhanced radiative heating for preparation of subboundary‐free silicon‐on‐insulator thin films. Applied Physics Letters, 55 (12). 1238-1240 doi:10.1063/1.102465

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Reference TypeJournal (article/letter/editorial)
TitleZone‐melting recrystallization with enhanced radiative heating for preparation of subboundary‐free silicon‐on‐insulator thin films
JournalApplied Physics Letters
AuthorsChen, C. K.Author
Im, J. S.Author
Year1989 (September 18)Volume55
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.102465Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487923Long-form Identifiermindat:1:5:8487923:7
GUID0
Full ReferenceChen, C. K., Im, J. S. (1989) Zone‐melting recrystallization with enhanced radiative heating for preparation of subboundary‐free silicon‐on‐insulator thin films. Applied Physics Letters, 55 (12). 1238-1240 doi:10.1063/1.102465
Plain TextChen, C. K., Im, J. S. (1989) Zone‐melting recrystallization with enhanced radiative heating for preparation of subboundary‐free silicon‐on‐insulator thin films. Applied Physics Letters, 55 (12). 1238-1240 doi:10.1063/1.102465
In(1989, September) Applied Physics Letters Vol. 55 (12) AIP Publishing

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Chen, C. K., Geis, M. W., Finn, M. C., Tsaur, B‐Y. (1986) New capping technique for zone‐melting recrystallization of silicon‐on‐insulator films. Applied Physics Letters, 48 (19). 1300-1302 doi:10.1063/1.96959
Pfeiffer, Loren, Gelman, A. E., Jackson, K. A., West, K. W., Batstone, J. L. (1987) Subboundary‐free zone‐melt recrystallization of thin‐film silicon. Applied Physics Letters, 51 (16). 1256-1258 doi:10.1063/1.98697
Pandya, R., Martinez, A. (1988) Large‐area defect‐free silicon‐on‐insulator films by zone‐melt recrystallization. Applied Physics Letters, 52 (11). 901-903 doi:10.1063/1.99267
Cline, H. E. (1984) Silicon thin films formed on an insulator by recrystallization. Journal of Applied Physics, 55 (8). 2910-2915 doi:10.1063/1.333332
Miaoulis, Ioannis N., Wong, Peter Y., Lipman, Joseph D., Im, James S. (1991) Thermal modeling of zone‐melting‐recrystallization processing of silicon‐on‐insulator film structures. Journal of Applied Physics, 69 (10). 7273-7282 doi:10.1063/1.347625
Mertens, P. W., Maes, H. E. (1992) Different Defect Patterns in Stacked Silicon Films Obtained by Radiative-Heating Zone-Melting Recrystallization. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l63
Stultz, T. J., Gibbons, J. F. (1982) Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates. Applied Physics Letters, 41 (9). 824-826 doi:10.1063/1.93708
Fan, John C. C., Tsaur, B‐Y., Chen, C. K., Dick, J. R., Kazmerski, L. L. (1984) Oxygen in zone‐melting‐recrystallized silicon‐on‐insulator films: Its distribution and possible role in sub‐boundary formation. Applied Physics Letters, 44 (11). 1086-1088 doi:10.1063/1.94653
Mertens, P. W., Leclair, J., Maes, H. E., Vandervorst, W. (1990) Oxygen distribution in silicon‐on‐insulator layers obtained by zone melting recrystallization. Journal of Applied Physics, 67 (12). 7337-7347 doi:10.1063/1.344520
Maby, E. W., Atwater, H. A., Keigler, A. L., Johnson, N. M. (1983) Electron‐beam‐induced current measurements in silicon‐on‐insulator films prepared by zone‐melting recrystallization. Applied Physics Letters, 43 (5). 482-484 doi:10.1063/1.94359
Lee, Chun‐Teh, Chen, Chenson K. (1989) Defect‐related dielectric breakdown, charge trapping, and interface‐state generation of gate oxides grown on zone‐melting‐recrystallized silicon‐on‐insulator films. Journal of Applied Physics, 65 (2). 646-650 doi:10.1063/1.343098
 
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