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Kesan, V. P., Dodabalapur, A., Neikirk, D. P., Streetman, B. G. (1988) Growth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation‐doped structures. Applied Physics Letters, 53 (8). 681-683 doi:10.1063/1.99849

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Reference TypeJournal (article/letter/editorial)
TitleGrowth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation‐doped structures
JournalApplied Physics Letters
AuthorsKesan, V. P.Author
Dodabalapur, A.Author
Neikirk, D. P.Author
Streetman, B. G.Author
Year1988 (August 22)Volume53
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.99849Search in ResearchGate
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Mindat Ref. ID8485721Long-form Identifiermindat:1:5:8485721:7
GUID0
Full ReferenceKesan, V. P., Dodabalapur, A., Neikirk, D. P., Streetman, B. G. (1988) Growth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation‐doped structures. Applied Physics Letters, 53 (8). 681-683 doi:10.1063/1.99849
Plain TextKesan, V. P., Dodabalapur, A., Neikirk, D. P., Streetman, B. G. (1988) Growth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation‐doped structures. Applied Physics Letters, 53 (8). 681-683 doi:10.1063/1.99849
In(1988, August) Applied Physics Letters Vol. 53 (8) AIP Publishing

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Dodabalapur, A., Kesan, V. P., Hinson, D. R., Neikirk, D. P., Streetman, B. G. (1989) Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells. Applied Physics Letters, 54 (17). 1675-1677 doi:10.1063/1.101301
Kyono, C. S., Kesan, V. P., Neikirk, D. P., Maziar, C. M., Streetman, B. G. (1989) Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single‐barrier structures grown by molecular beam epitaxy. Applied Physics Letters, 54 (6). 549-551 doi:10.1063/1.100927
Chan, K. T., Lightner, M. J., Patterson, G. A., Yu, K. M. (1990) Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation‐doped field‐effect transistor structures. Applied Physics Letters, 56 (20). 2022-2024 doi:10.1063/1.103005
Campbell, A. C., Dodabalapur, A., Crook, G. E., Streetman, B. G. (1989) Study of theDXcenter fine structure in ion‐implanted Al0.27Ga0.73As processed by rapid thermal annealing. Applied Physics Letters, 54 (8). 727-729 doi:10.1063/1.100874
Dodabalapur, Ananth, Sadra, K., Streetman, B. G. (1990) Relationship between photoluminescence spectra and low‐field electrical properties of modulation‐doped AlGaAs/GaAs quantum wells. Journal of Applied Physics, 68 (8). 4119-4126 doi:10.1063/1.346253
Streit, D. C., Jones, W. L., Sadwick, L. P., Kim, C. W., Hwu, R. J. (1991) Effect of rapid thermal annealing on planar‐doped pseudomorphic InGaAs high electron mobility transistor structures. Applied Physics Letters, 58 (20). 2273-2275 doi:10.1063/1.104897
Lee, S.‐Tong, Braunstein, G., Fellinger, P., Kahen, K. B., Rajeswaran, G. (1988) Disordering of Si‐implanted GaAs‐AlGaAs superlattices by rapid thermal annealing. Applied Physics Letters, 53 (25). 2531-2533 doi:10.1063/1.100199
Jogai, B., Yu, P. W., Streit, D. C. (1994) Free electron distribution in δ‐doped InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures. Journal of Applied Physics, 75 (3). 1586-1591 doi:10.1063/1.356395
Liu, C. T., Lin, S. Y., Tsui, D. C., Lee, H., Ackley, D. (1988) Cyclotron resonance measurements of electron effective mass in strained AlGaAs/InGaAs/GaAs pseudomorphic structures. Applied Physics Letters, 53 (25). 2510-2512 doi:10.1063/1.100409
Bour, D. P., Gilbert, D. B., Elbaum, L., Harvey, M. G. (1988) Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser. Applied Physics Letters, 53 (24). 2371-2373 doi:10.1063/1.100233
Kahen, K. B., Rajeswaran, G., Lee, S. T. (1988) Mechanism for ion‐induced mixing of GaAs‐AlGaAs interfaces by rapid thermal annealing. Applied Physics Letters, 53 (17). 1635-1637 doi:10.1063/1.99935
 
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