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Kyono, C. S., Kesan, V. P., Neikirk, D. P., Maziar, C. M., Streetman, B. G. (1989) Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single‐barrier structures grown by molecular beam epitaxy. Applied Physics Letters, 54 (6). 549-551 doi:10.1063/1.100927

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Reference TypeJournal (article/letter/editorial)
TitleDependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single‐barrier structures grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsKyono, C. S.Author
Kesan, V. P.Author
Neikirk, D. P.Author
Maziar, C. M.Author
Streetman, B. G.Author
Year1989 (February 6)Volume54
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.100927Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487411Long-form Identifiermindat:1:5:8487411:7
GUID0
Full ReferenceKyono, C. S., Kesan, V. P., Neikirk, D. P., Maziar, C. M., Streetman, B. G. (1989) Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single‐barrier structures grown by molecular beam epitaxy. Applied Physics Letters, 54 (6). 549-551 doi:10.1063/1.100927
Plain TextKyono, C. S., Kesan, V. P., Neikirk, D. P., Maziar, C. M., Streetman, B. G. (1989) Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single‐barrier structures grown by molecular beam epitaxy. Applied Physics Letters, 54 (6). 549-551 doi:10.1063/1.100927
In(1989, February) Applied Physics Letters Vol. 54 (6) AIP Publishing

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Dodabalapur, A., Kesan, V. P., Hinson, D. R., Neikirk, D. P., Streetman, B. G. (1989) Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells. Applied Physics Letters, 54 (17). 1675-1677 doi:10.1063/1.101301
de Miguel, J. L., Fujiwara, K., Tapfer, L., Ploog, K. (1985) Effect of barrier thickness on the luminescence properties of AlAs/GaAs multiple quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 47 (8). 836-838 doi:10.1063/1.96001
Kesan, V. P., Dodabalapur, A., Neikirk, D. P., Streetman, B. G. (1988) Growth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation‐doped structures. Applied Physics Letters, 53 (8). 681-683 doi:10.1063/1.99849
Fujieda, Shinji (1992) Control of GaAs Schottky barrier height by formation of a thin off‐stoichiometric GaAs interlayer grown by low‐temperature molecular beam epitaxy. Applied Physics Letters, 61 (3). 288-290 doi:10.1063/1.107940
Cho, A. Y., Dernier, P. D. (1978) Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs. Journal of Applied Physics, 49 (6). 3328-3332 doi:10.1063/1.325286
Cheng, Peng, Harris, James S. (1989) Effect of Si doping in AlAs barrier layers of AlAs‐GaAs‐AlAs double‐barrier resonant tunneling diodes. Applied Physics Letters, 55 (6). 572-574 doi:10.1063/1.101836
Petroff, P. M., Gossard, A. C., Wiegmann, W. (1984) Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy. Applied Physics Letters, 45 (6). 620-622 doi:10.1063/1.95332
Rousseau, Kenneth V., Wang, K. L., Schulman, J. N. (1989) Γ‐ andX‐state influences on resonant tunneling current in single‐ and double‐barrier GaAs/AlAs structures. Applied Physics Letters, 54 (14). 1341-1343 doi:10.1063/1.100709
Fujieda, Shinji (1993) Control of GaAs Schottky barrier height using a thin nonstoichiometric GaAs interface layer grown by low‐temperature molecular beam epitaxy. Journal of Applied Physics, 74 (12). 7357-7363 doi:10.1063/1.355003
Huang, H.‐C. W., Aliotta, C. F., Ho, P. S. (1982) Schottky barrier height measurement by electron‐beam induced voltage. Applied Physics Letters, 41 (1). 54-56 doi:10.1063/1.93326
Kuo, T. C., Wang, K. L., Arghavani, R. (1992) Variation of the Schottky barrier height of the differently oriented CoGa on GaAs by molecular beam epitaxy. Applied Physics Letters, 61 (24). 2869-2871 doi:10.1063/1.108060
 
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