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Suemune, I., Yamada, K., Masato, H., Kan, Y., Yamanishi, M. (1989) Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping. Applied Physics Letters, 54 (11). 981-983 doi:10.1063/1.100755

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Reference TypeJournal (article/letter/editorial)
TitleLasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping
JournalApplied Physics Letters
AuthorsSuemune, I.Author
Yamada, K.Author
Masato, H.Author
Kan, Y.Author
Yamanishi, M.Author
Year1989 (March 13)Volume54
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.100755Search in ResearchGate
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Mindat Ref. ID8485935Long-form Identifiermindat:1:5:8485935:8
GUID0
Full ReferenceSuemune, I., Yamada, K., Masato, H., Kan, Y., Yamanishi, M. (1989) Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping. Applied Physics Letters, 54 (11). 981-983 doi:10.1063/1.100755
Plain TextSuemune, I., Yamada, K., Masato, H., Kan, Y., Yamanishi, M. (1989) Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping. Applied Physics Letters, 54 (11). 981-983 doi:10.1063/1.100755
In(1989, March) Applied Physics Letters Vol. 54 (11) AIP Publishing

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Suemune, I., Masato, H., Nakanishi, K., Yamada, K., Kan, Y., Yamanishi, M. (1990) Photopumped lasing in ZnSSe/ZnSe multilayer structures up to 210 K. Journal of Crystal Growth, 101 (1). 754-757 doi:10.1016/0022-0248(90)91074-z
Kan, Y., Yamanishi, M., Okuda, M., Mukaiyama, K., Ohnishi, T., Kawamoto, M., Suemune, I. (1989) Quantum‐confined field‐effect light emitters with high‐speed switching capability. Applied Physics Letters, 55 (12). 1149-1151 doi:10.1063/1.101680
Suemune, I., Kunitsugu, Y., Kan, Y., Yamanishi, M. (1989) Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces. Applied Physics Letters, 55 (8). 760-762 doi:10.1063/1.101798
Nakanishi, K., Suemune, I., Fujii, Y., Kuroda, Y., Yamanishi, M. (1991) Extremely‐low‐threshold and high‐temperature operation in a photopumped ZnSe/ZnSSe blue laser. Applied Physics Letters, 59 (12). 1401-1403 doi:10.1063/1.105319
Suemune, Ikuo, Yamada, Kouichi, Masato, Hiroyuki, Kanda, Takashi, Kan, Yasuo, Yamanishi, Masamichi (1988) Characterization of Nitrogen-Doped ZnSe and ZnS0.06Se0.94Films Grown by Metal-Organic Vapor-Phase Epitaxy. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2195
Suemune, I., Coldren, L. A., Yamanishi, M., Kan, Y. (1988) Extremely wide modulation bandwidth in a low threshold current strained quantum well laser. Applied Physics Letters, 53 (15). 1378-1380 doi:10.1063/1.99984
Kan, Y., Okuda, M., Yamanishi, M., Ohnishi, T., Mukaiyama, K., Suemune, I. (1990) Room‐temperature operation of three‐terminal quantum‐confined field‐effect light emitters. Applied Physics Letters, 56 (21). 2059-2061 doi:10.1063/1.102992
Obata, K., Yamanishi, M., Yamaoka, Y., Kan, Y., Hayashi, J., Suemune, I. (1990) Observation of optical bistability by charge‐induced self‐feedback in biased AlGaAs multiple quantum well structures. Applied Physics Letters, 57 (5). 419-421 doi:10.1063/1.103653
Suemune, I., Kunitsugu, Y., Tanaka, Y., Kan, Y., Yamanishi, M. (1988) New low‐temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma. Applied Physics Letters, 53 (22). 2173-2175 doi:10.1063/1.100273
Yasuhira, N., Suemune, I., Kan, Y., Yamanishi, M. (1990) Selectively doped double‐heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser. Applied Physics Letters, 56 (15). 1391-1393 doi:10.1063/1.102477
Suemune, I., Kishimoto, A., Hamaoka, K., Honda, Y., Kan, Y., Yamanishi, M. (1990) Dependence of GaAs etch rate on the angle of incidence of a hydrogen plasma beam excited by electron cyclotron resonance. Applied Physics Letters, 56 (24). 2393-2395 doi:10.1063/1.102926
 
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