Vote for your favorite mineral in #MinCup25! - Titanite vs. Thortveitite
It's a pair of T-minerals with as versatile #titanite faces off against the home of rare earth elements #thortveitite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Schneider, R. P., Wessels, B. W. (1989) Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces. Applied Physics Letters, 54 (12). 1142-1144 doi:10.1063/1.100742

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleMonolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces
JournalApplied Physics Letters
AuthorsSchneider, R. P.Author
Wessels, B. W.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100742Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486010Long-form Identifiermindat:1:5:8486010:5
GUID0
Full ReferenceSchneider, R. P., Wessels, B. W. (1989) Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces. Applied Physics Letters, 54 (12). 1142-1144 doi:10.1063/1.100742
Plain TextSchneider, R. P., Wessels, B. W. (1989) Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces. Applied Physics Letters, 54 (12). 1142-1144 doi:10.1063/1.100742
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Storch, D. R., Schneider, R. P., Wessels, B. W. (1992) Temperature dependent photoluminescent properties of InAsxP1−x/InP strained‐layer quantum wells. Journal of Applied Physics, 72 (7). 3041-3045 doi:10.1063/1.351514
Schneider, R. P., Wessels, B. W. (1990) InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy. Applied Physics Letters, 57 (19). 1998-2000 doi:10.1063/1.103989
Schneider, R. P., Wessels, B. W. (1991) Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor‐phase epitaxy. Journal of Applied Physics, 70 (1). 405-408 doi:10.1063/1.350289
Hong, W.‐P., Bhat, R., Hayes, J., DeRosa, F., Leadbeater, M., Koza, M. (1992) Novel strained InP/InAsxP1−xquantum‐well modulation‐doped heterostructures. Applied Physics Letters, 60 (1). 109-111 doi:10.1063/1.107363
Hwang, S. J., Shan, W., Song, J. J., Hou, H. Q., Tu, C. W. (1992) Interband transitions in InAsxP1−x/InP strained multiple quantum wells. Journal of Applied Physics, 72 (4). 1645-1647 doi:10.1063/1.351683
Bi, W. G., Tu, C. W. (1998) Growth and characterization of InNxAsyP1−x−y/InP strained quantum well structures. Applied Physics Letters, 72 (10). 1161-1163 doi:10.1063/1.121000
Nichols, D., Bhattacharya, P. (1992) Differential gain in InP‐based strained layer multiple quantum well lasers. Applied Physics Letters, 61 (18). 2129-2131 doi:10.1063/1.108325
David, J. P. R., Hopkinson, M., Stavrinou, P. N., Haywood, S. K. (1995) Growth of InAsxP1−x/InP multi‐quantum well structures by solid source molecular beam epitaxy. Journal of Applied Physics, 78 (5). 3330-3334 doi:10.1063/1.360026
Thijs, P. J. A., Montie, E. A., van Kesteren, H. W., ’t Hooft, G. W. (1988) Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low‐pressure organometallic vapor phase epitaxy. Applied Physics Letters, 53 (11). 971-973 doi:10.1063/1.100084
Khan, Aurangzeb, Freundlich, A. (2006) Carrier loss channels for non-collected carrier in InAsxP1−x∕InP multiquantum well solar cells. Applied Physics Letters, 88 (10). 103504pp. doi:10.1063/1.2183821
Temkin, H., Tanbun‐Ek, T., Logan, R. A. (1990) Strained InGaAs/InP quantum well lasers. Applied Physics Letters, 56 (13). 1210-1212 doi:10.1063/1.102562
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 11, 2025 15:35:42
Go to top of page