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(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1989 (March)Volume54
Issue<   12   >
PublisherAIP Publishing
Mindat Ref. ID8486002Long-form Identifiermindat:1:5:8486002:6
GUID0
Full Reference(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing
Plain Text(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 54. AIP Publishing

Contains

Horikawa, H., Wada, H., Matsui, Y., Yamada, T., Ogawa, Y., Kawai, Y. (1989) High‐power and high‐speed semi‐insulating blocked V‐grooved inner‐stripe lasers at 1.3 μm wavelength fabricated onp‐InP substrates. Applied Physics Letters, 54 (12). 1077-1079 doi:10.1063/1.100762
Negami, T., Haga, H., Yamamoto, S. (1989) Guided‐wave optical wavelength demultiplexer using an asymmetricYjunction. Applied Physics Letters, 54 (12). 1080-1082 doi:10.1063/1.100763
Barkay, N., Moser, F., Kowal, D., Katzir, A. (1989) Absorption edges of mixed silver‐halide crystals and polycrystalline optical fibers. Applied Physics Letters, 54 (12). 1083-1085 doi:10.1063/1.100764
Ouellette, François, Hill, Kenneth O., Johnson, Derwyn C. (1989) Enhancement of second‐harmonic generation in optical fibers by a hydrogen and heat treatment. Applied Physics Letters, 54 (12). 1086-1088 doi:10.1063/1.100765
Shieh, C., Engelmann, R., Mantz, J., Alavi, K., Shu, C. (1989) Cavity length dependence of threshold current for quantum well lasers. Applied Physics Letters, 54 (12). 1089-1091 doi:10.1063/1.100766
Mittelstein, Michael, Mehuys, David, Yariv, Amnon, Ungar, Jeffrey E., Sarfaty, Rona (1989) Broadband tunability of gain‐flattened quantum well semiconductor lasers with an external grating. Applied Physics Letters, 54 (12). 1092-1094 doi:10.1063/1.100767
Kim, B. G., Garmire, E., Hummel, Steven G., Dapkus, P. D. (1989) Nonlinear Bragg reflector based on saturable absorption. Applied Physics Letters, 54 (12). 1095-1097 doi:10.1063/1.100768
Vu, T. Q., Norris, J. A., Tsai, C. S. (1989) Planar waveguide lenses in GaAs by using ion milling. Applied Physics Letters, 54 (12). 1098-1100 doi:10.1063/1.100769
Dou, S. X., Jiang, M. H., Shao, Z. S., Tao, X. T. (1989) Maker fringes in biaxial crystals and the nonlinear optical coefficients of thiosemicarbazide cadmium chloride monohydrate. Applied Physics Letters, 54 (12). 1101-1103 doi:10.1063/1.100770
Motojima, Seiji, Mizutani, Hidetoshi (1989) Preparation of TiN films by photochemical vapor deposition. Applied Physics Letters, 54 (12). 1104-1105 doi:10.1063/1.100771
Hiraiwa, A., Usui, H., Yagi, K. (1989) Novel characterization of implant damage in SiO2by nuclear‐deposited energy. Applied Physics Letters, 54 (12). 1106-1108 doi:10.1063/1.101429
Marella, Paul F., Tuckerman, David B., Pease, R. Fabian (1989) Modeling of laser planarization of thin metal films. Applied Physics Letters, 54 (12). 1109-1111 doi:10.1063/1.100772
Salemink, H. W. M., Meier, H. P., Ellialtioglu, R., Gerritsen, J. W., Muralt, P. R. M. (1989) Tunnel spectroscopy of the AlGaAs‐GaAs heterostructure interface. Applied Physics Letters, 54 (12). 1112-1114 doi:10.1063/1.100773
Bourgoin, J. C., Feng, S. L., Stiévenard, D., Letartre, X., Barbier, E., Hirtz, J. P. (1989) Suppression ofDXcenters in GaAlAs‐GaAs heterostructures. Applied Physics Letters, 54 (12). 1115-1117 doi:10.1063/1.100774
Hattori, R., Shirafuji, J. (1989) Longitudinal electron drift mobility of hydrogenated amorphous silicon/silicon nitride multilayer structures revealed by time‐of‐flight measurements. Applied Physics Letters, 54 (12). 1118-1120 doi:10.1063/1.101478
Basmaji, P., Zaouk, A., Gibart, P., Gauthier, D., Portal, J. C. (1989) Enhancement of free‐carrier concentration inn‐type AlxGa1−xAs grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C. Applied Physics Letters, 54 (12). 1121-1123 doi:10.1063/1.100775
Ohno, H., Ishii, H., Matsuzaki, K., Hasegawa, H. (1989) Self‐limiting deposition of Ga on a GaAs surface by thermal decomposition of diethylgalliumchloride observed by x‐ray photoelectron spectroscopy. Applied Physics Letters, 54 (12). 1124-1126 doi:10.1063/1.100776
Nishioka, Yasushiro, Ohji, Yuzuru, Mukai, Kiichiro, Sugano, Takuo, Wang, Yu, Ma, T. P. (1989) Dielectric characteristics of fluorinated ultradry SiO2. Applied Physics Letters, 54 (12). 1127-1129 doi:10.1063/1.101479
Ismail, K., Antoniadis, D. A., Smith, Henry I. (1989) One‐dimensional subbands and mobility modulation in GaAs/AlGaAs quantum wires. Applied Physics Letters, 54 (12). 1130-1132 doi:10.1063/1.100738
Ullrich, B., Zhang, C., Klitzing, K. v. (1989) Quantum‐confined subband transitions of a GaAs sawtooth doping superlattice. Applied Physics Letters, 54 (12). 1133-1135 doi:10.1063/1.100739
Kuang, J. B., Tasker, P. J., Chen, Y. K., Wang, G. W., Eastman, L. F., Aina, O. A., Hier, H., Fathimulla, A. (1989) Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1136-1138 doi:10.1063/1.100740
Keavney, C. J., Vernon, S. M., Haven, V. E., Wojtczuk, S. J., Al‐Jassim, M. M. (1989) Fabrication ofn+/pInP solar cells on silicon substrates. Applied Physics Letters, 54 (12). 1139-1141 doi:10.1063/1.100741
Schneider, R. P., Wessels, B. W. (1989) Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces. Applied Physics Letters, 54 (12). 1142-1144 doi:10.1063/1.100742
Lee, S.‐Tong, Chen, Samuel, Rajeswaran, G., Braunstein, G., Fellinger, P., Madathil, J. (1989) Layer intermixing in 1 MeV implanted GaAs/AlGaAs superlattices. Applied Physics Letters, 54 (12). 1145-1147 doi:10.1063/1.100743
Spindt, C. J., Besser, R. S., Cao, R., Miyano, K., Helms, C. R., Spicer, W. E. (1989) Photoemission study of the band bending and chemistry of sodium sulfide on GaAs (100). Applied Physics Letters, 54 (12). 1148-1150 doi:10.1063/1.100744
Agarwala, S., Won, T., Morkoç, H. (1989) AlGaAs/GaAs single heterojunction bipolar transistors grown on InP by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1151-1153 doi:10.1063/1.100745
Jen, H. R., Ma, K. Y., Stringfellow, G. B. (1989) Long‐range order in InAsSb. Applied Physics Letters, 54 (12). 1154-1156 doi:10.1063/1.100746
Yarn, K. F., Wang, Y. H., Chang, C. Y. (1989) Novel GaAs voltage‐controllable negative differential resistance transistor prepared by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1157-1159 doi:10.1063/1.100747
Hwang, D. M., Schwarz, S. A., Mei, P., Bhat, R., Venkatesan, T., Nazar, L., Schwartz, C. L. (1989) Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2superlattices by Zn diffusion. Applied Physics Letters, 54 (12). 1160-1162 doi:10.1063/1.101480
Yeh, J.‐J., Hong, M., Felder, R. J. (1989) Insituformation of YBa2Cu3Oxthin films by physical sputtering. Applied Physics Letters, 54 (12). 1163-1165 doi:10.1063/1.101560
Zhang, Jiming, Zhao, Jing, Marcy, Henry O., Tonge, Lauren M., Wessels, Bruce W., Marks, Tobin J., Kannewurf, Carl R. (1989) Organometallic chemical vapor deposition of highTcsuperconducting Bi‐Sr‐Ca‐Cu‐O films. Applied Physics Letters, 54 (12). 1166-1168 doi:10.1063/1.101481
Komatsu, T., Sato, R., Matusita, K., Yamashita, T. (1989) Superconducting glass ceramics withTc=100 K based on the Bi‐Pb‐Sr‐Ca‐Cu‐O system. Applied Physics Letters, 54 (12). 1169-1171 doi:10.1063/1.101482
Robbes, D., Sing, M. Lam Chok, Monfort, Y., Bloyet, D., Provost, J., Raveau, B. (1989) Bulk dc SQUID in a Tl‐based ceramic: Shapiro steps, signal, and noise properties at 77 K. Applied Physics Letters, 54 (12). 1172-1174 doi:10.1063/1.101356
Brocklesby, W. S., Monroe, Don, Levi, A. F. J., Hong, M., Liou, S. H., Kwo, J., Rice, C. E., Mankiewich, P. M., Howard, R. E. (1989) Electrical response of superconducting YBa2Cu3O7−δto light. Applied Physics Letters, 54 (12). 1175-1177 doi:10.1063/1.101483
Chen, C. H., White, A. E., Short, K. T., Dynes, R. C., Poate, J. M., Jacobson, D. C., Mankiewich, P. M., Skocpol, W. J., Howard, R. E. (1989) Ion beam induced damage and superlattice formation in epitaxial YBa2Cu3O7−δthin films. Applied Physics Letters, 54 (12). 1178-1180 doi:10.1063/1.101484
Katori, K., Hayashi, K., Hayakawa, M., Aso, K. (1989) Soft magnetic Fe‐Al‐N/Si‐N multilayered film with high thermal stability. Applied Physics Letters, 54 (12). 1181-1182 doi:10.1063/1.101561
Yeh, C., Shimabukuro, F. I., Chu, J. (1989) Ultralow loss dielectric ribbon waveguide for millimeter/submillimeter waves. Applied Physics Letters, 54 (12). 1183-1185 doi:10.1063/1.101485

See Also

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