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Lee, S.‐Tong, Chen, Samuel, Rajeswaran, G., Braunstein, G., Fellinger, P., Madathil, J. (1989) Layer intermixing in 1 MeV implanted GaAs/AlGaAs superlattices. Applied Physics Letters, 54 (12). 1145-1147 doi:10.1063/1.100743

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Reference TypeJournal (article/letter/editorial)
TitleLayer intermixing in 1 MeV implanted GaAs/AlGaAs superlattices
JournalApplied Physics Letters
AuthorsLee, S.‐TongAuthor
Chen, SamuelAuthor
Rajeswaran, G.Author
Braunstein, G.Author
Fellinger, P.Author
Madathil, J.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100743Search in ResearchGate
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Mindat Ref. ID8486012Long-form Identifiermindat:1:5:8486012:3
GUID0
Full ReferenceLee, S.‐Tong, Chen, Samuel, Rajeswaran, G., Braunstein, G., Fellinger, P., Madathil, J. (1989) Layer intermixing in 1 MeV implanted GaAs/AlGaAs superlattices. Applied Physics Letters, 54 (12). 1145-1147 doi:10.1063/1.100743
Plain TextLee, S.‐Tong, Chen, Samuel, Rajeswaran, G., Braunstein, G., Fellinger, P., Madathil, J. (1989) Layer intermixing in 1 MeV implanted GaAs/AlGaAs superlattices. Applied Physics Letters, 54 (12). 1145-1147 doi:10.1063/1.100743
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Lee, S.‐Tong, Braunstein, G., Fellinger, P., Kahen, K. B., Rajeswaran, G. (1988) Disordering of Si‐implanted GaAs‐AlGaAs superlattices by rapid thermal annealing. Applied Physics Letters, 53 (25). 2531-2533 doi:10.1063/1.100199
Chen, Samuel, Lee, S.‐Tong, Braunstein, G., Tan, T. Y. (1989) Void formation and inhibition of layer intermixing in ion‐impIanted GaAs/AlGaAs superlattices. Applied Physics Letters, 55 (12). 1194-1196 doi:10.1063/1.101653
Lee, S.‐Tong, Chen, Samuel, Braunstein, G., Ko, Kei‐Yu, Ott, Mary L., Tan, T. Y. (1990) Void formation, electrical activation, and layer intermixing in Si‐implanted GaAs/AlGaAs superlattices. Applied Physics Letters, 57 (4). 389-391 doi:10.1063/1.103701
Braunstein, G., Tuschel, D., Chen, Samuel, Lee, S.‐Tong (1989) Raman scattering study of lattice disorder in 1‐MeV Si‐implanted GaAs. Journal of Applied Physics, 66 (8). 3515-3522 doi:10.1063/1.344108
Simpson, P. J., Schultz, P. J., Lee, S.‐Tong, Chen, Samuel, Braunstein, G. (1992) Annealing of Si‐implanted GaAs studied using variable‐energy positrons. Journal of Applied Physics, 72 (5). 1799-1804 doi:10.1063/1.351650
Chen, Samuel, Lee, S.‐Tong, Braunstein, G., Ko, K. Y., Tan, T. Y. (1991) Distribution mechanism of voids in Si‐implanted GaAs. Journal of Applied Physics, 70 (2). 656-660 doi:10.1063/1.349669
Lee, S.-Tong, Chen, Samuel, Braunstein, Gabriel, Ko, Kei-Yu, Tan, T.Y. (1991) Anomalous electrical activation in Si-implanted GaAs/AlGaAs superlattices. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 999-1002 doi:10.1016/0168-583x(91)95750-8
Ko, Kei‐Yu, Chen, Samuel, Lee, S.‐Tong, Braunstein, G. (1992) High temperature thermally stable implant isolation for GaAs via void formation. Applied Physics Letters, 60 (10). 1223-1225 doi:10.1063/1.107412
Lee, S.‐Tong, Chen, Samuel, Agostinelli, J., Braunstein, G., Huang, L. J., Lau, W. M. (1992) Laser processing of carbon‐implanted Cu, Ni, and Co crystals: An attempt to grow diamond films. Applied Physics Letters, 60 (18). 2213-2215 doi:10.1063/1.107059
Lee, S.‐Tong, Chen, Samuel, Hung, L. S., Braunstein, G. (1989) Microstructure of epitaxially oriented superconducting YBa2Cu3O7−xfilms grown on (100) MgO by metalorganic decomposition. Applied Physics Letters, 55 (3). 286-288 doi:10.1063/1.102406
Szafranek, I., Szafranek, M., Cunningham, B. T., Guido, L. J., Holonyak, N., Stillman, G. E. (1990) Layer intermixing in heavily carbon‐doped AlGaAs/GaAs superlattices. Journal of Applied Physics, 68 (11). 5615-5620 doi:10.1063/1.346973
 
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