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Chen, Samuel, Lee, S.‐Tong, Braunstein, G., Tan, T. Y. (1989) Void formation and inhibition of layer intermixing in ion‐impIanted GaAs/AlGaAs superlattices. Applied Physics Letters, 55 (12). 1194-1196 doi:10.1063/1.101653

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Reference TypeJournal (article/letter/editorial)
TitleVoid formation and inhibition of layer intermixing in ion‐impIanted GaAs/AlGaAs superlattices
JournalApplied Physics Letters
AuthorsChen, SamuelAuthor
Lee, S.‐TongAuthor
Braunstein, G.Author
Tan, T. Y.Author
Year1989 (September 18)Volume55
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.101653Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487862Long-form Identifiermindat:1:5:8487862:7
GUID0
Full ReferenceChen, Samuel, Lee, S.‐Tong, Braunstein, G., Tan, T. Y. (1989) Void formation and inhibition of layer intermixing in ion‐impIanted GaAs/AlGaAs superlattices. Applied Physics Letters, 55 (12). 1194-1196 doi:10.1063/1.101653
Plain TextChen, Samuel, Lee, S.‐Tong, Braunstein, G., Tan, T. Y. (1989) Void formation and inhibition of layer intermixing in ion‐impIanted GaAs/AlGaAs superlattices. Applied Physics Letters, 55 (12). 1194-1196 doi:10.1063/1.101653
In(1989, September) Applied Physics Letters Vol. 55 (12) AIP Publishing

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Lee, S.‐Tong, Chen, Samuel, Braunstein, G., Ko, Kei‐Yu, Ott, Mary L., Tan, T. Y. (1990) Void formation, electrical activation, and layer intermixing in Si‐implanted GaAs/AlGaAs superlattices. Applied Physics Letters, 57 (4). 389-391 doi:10.1063/1.103701
Lee, S.‐Tong, Chen, Samuel, Rajeswaran, G., Braunstein, G., Fellinger, P., Madathil, J. (1989) Layer intermixing in 1 MeV implanted GaAs/AlGaAs superlattices. Applied Physics Letters, 54 (12). 1145-1147 doi:10.1063/1.100743
Chen, Samuel, Lee, S.-Tong, Braunstein, G., Ko, K.-Y., Zheng, L. R., Tan, T. Y. (1990) Void Formation and Its Effect on Dopant Diffusion and Carrier Activation in Si-Implanted GaAs. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1950
Ko, Kei‐Yu, Chen, Samuel, Lee, S.‐Tong, Braunstein, G. (1992) High temperature thermally stable implant isolation for GaAs via void formation. Applied Physics Letters, 60 (10). 1223-1225 doi:10.1063/1.107412
Chen, Samuel, Lee, S.‐Tong, Braunstein, G., Ko, K. Y., Tan, T. Y. (1991) Distribution mechanism of voids in Si‐implanted GaAs. Journal of Applied Physics, 70 (2). 656-660 doi:10.1063/1.349669
Lee, S.‐Tong, Braunstein, G., Fellinger, P., Kahen, K. B., Rajeswaran, G. (1988) Disordering of Si‐implanted GaAs‐AlGaAs superlattices by rapid thermal annealing. Applied Physics Letters, 53 (25). 2531-2533 doi:10.1063/1.100199
Braunstein, G., Tuschel, D., Chen, Samuel, Lee, S.‐Tong (1989) Raman scattering study of lattice disorder in 1‐MeV Si‐implanted GaAs. Journal of Applied Physics, 66 (8). 3515-3522 doi:10.1063/1.344108
Lee, S.-Tong, Chen, Samuel, Braunstein, Gabriel, Ko, Kei-Yu, Tan, T.Y. (1991) Anomalous electrical activation in Si-implanted GaAs/AlGaAs superlattices. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 999-1002 doi:10.1016/0168-583x(91)95750-8
Lee, S.‐Tong, Chen, Samuel, Hung, L. S., Braunstein, G. (1989) Microstructure of epitaxially oriented superconducting YBa2Cu3O7−xfilms grown on (100) MgO by metalorganic decomposition. Applied Physics Letters, 55 (3). 286-288 doi:10.1063/1.102406
Szafranek, I., Szafranek, M., Cunningham, B. T., Guido, L. J., Holonyak, N., Stillman, G. E. (1990) Layer intermixing in heavily carbon‐doped AlGaAs/GaAs superlattices. Journal of Applied Physics, 68 (11). 5615-5620 doi:10.1063/1.346973
Kinch, M. A., Yariv, A. (1989) Performance limitations of GaAs/AlGaAs infrared superlattices. Applied Physics Letters, 55 (20). 2093-2095 doi:10.1063/1.102093
 
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