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Shieh, C., Engelmann, R., Mantz, J., Alavi, K., Shu, C. (1989) Cavity length dependence of threshold current for quantum well lasers. Applied Physics Letters, 54 (12). 1089-1091 doi:10.1063/1.100766

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Reference TypeJournal (article/letter/editorial)
TitleCavity length dependence of threshold current for quantum well lasers
JournalApplied Physics Letters
AuthorsShieh, C.Author
Engelmann, R.Author
Mantz, J.Author
Alavi, K.Author
Shu, C.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100766Search in ResearchGate
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Mindat Ref. ID8486030Long-form Identifiermindat:1:5:8486030:9
GUID0
Full ReferenceShieh, C., Engelmann, R., Mantz, J., Alavi, K., Shu, C. (1989) Cavity length dependence of threshold current for quantum well lasers. Applied Physics Letters, 54 (12). 1089-1091 doi:10.1063/1.100766
Plain TextShieh, C., Engelmann, R., Mantz, J., Alavi, K., Shu, C. (1989) Cavity length dependence of threshold current for quantum well lasers. Applied Physics Letters, 54 (12). 1089-1091 doi:10.1063/1.100766
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Shieh, C., Mantz, J., Lee, H., Ackley, D., Engelmann, R. (1989) Anomalous dependence of threshold current on stripe width in gain‐guided strained‐layer InGaAs/GaAs quantum well lasers. Applied Physics Letters, 54 (25). 2521-2523 doi:10.1063/1.101081
Wolf, T., Shieh, C.‐L., Engelmann, R., Alavi, K., Mantz, J. (1989) Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity‐induced disordering. Applied Physics Letters, 55 (14). 1412-1414 doi:10.1063/1.101610
Lee, Johnson, Shieh, C., Vassell, M. O. (1991) Variation of threshold current with cavity length in strained‐layer InGaAs/GaAs quantum well lasers. Journal of Applied Physics, 69 (4). 1882-1891 doi:10.1063/1.348758
Wilcox, J. Z., Ou, S., Yang, J. J., Jansen, M., Peterson, G. L. (1989) Dependence of emission wavelength on cavity length and facet reflectivities in multiple quantum well semiconductor lasers. Applied Physics Letters, 54 (22). 2174-2176 doi:10.1063/1.101156
Beernink, K. J., York, P. K., Coleman, J. J. (1989) Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (25). 2585-2587 doi:10.1063/1.101986
Jelley, K. W., Engelmann, R. W. H., Alavi, K., Lee, H. (1989) Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures. Applied Physics Letters, 55 (1). 70-72 doi:10.1063/1.101757
Blood, P., Kucharska, A. I., Foxon, C. T., Griffiths, K. (1989) Temperature dependence of spontaneous emission in GaAs‐AlGaAs quantum well lasers. Applied Physics Letters, 55 (12). 1167-1169 doi:10.1063/1.101686
Dzurko, K. M., Menu, E. P., Beyler, C. A., Osinski, J. S., Dapkus, P. D. (1989) Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (2). 105-107 doi:10.1063/1.101242
Chang‐Hasnain, C. J., Kapon, E., Bhat, R. (1989) Spatial mode structure of broad‐area semiconductor quantum well lasers. Applied Physics Letters, 54 (3). 205-207 doi:10.1063/1.101009
Chow, W. W., Amano, H., Takeuchi, T., Han, J. (1999) Quantum-well width dependence of threshold current density in InGaN lasers. Applied Physics Letters, 75 (2). 244-246 doi:10.1063/1.124336
Blood, P., Fletcher, E. D., Woodbridge, K. (1985) Dependence of threshold current on the number of wells in AlGaAs‐GaAs quantum well lasers. Applied Physics Letters, 47 (3). 193-195 doi:10.1063/1.96213
 
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