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Horikawa, H., Wada, H., Matsui, Y., Yamada, T., Ogawa, Y., Kawai, Y. (1989) High‐power and high‐speed semi‐insulating blocked V‐grooved inner‐stripe lasers at 1.3 μm wavelength fabricated onp‐InP substrates. Applied Physics Letters, 54 (12). 1077-1079 doi:10.1063/1.100762

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐power and high‐speed semi‐insulating blocked V‐grooved inner‐stripe lasers at 1.3 μm wavelength fabricated onp‐InP substrates
JournalApplied Physics Letters
AuthorsHorikawa, H.Author
Wada, H.Author
Matsui, Y.Author
Yamada, T.Author
Ogawa, Y.Author
Kawai, Y.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100762Search in ResearchGate
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Mindat Ref. ID8486023Long-form Identifiermindat:1:5:8486023:9
GUID0
Full ReferenceHorikawa, H., Wada, H., Matsui, Y., Yamada, T., Ogawa, Y., Kawai, Y. (1989) High‐power and high‐speed semi‐insulating blocked V‐grooved inner‐stripe lasers at 1.3 μm wavelength fabricated onp‐InP substrates. Applied Physics Letters, 54 (12). 1077-1079 doi:10.1063/1.100762
Plain TextHorikawa, H., Wada, H., Matsui, Y., Yamada, T., Ogawa, Y., Kawai, Y. (1989) High‐power and high‐speed semi‐insulating blocked V‐grooved inner‐stripe lasers at 1.3 μm wavelength fabricated onp‐InP substrates. Applied Physics Letters, 54 (12). 1077-1079 doi:10.1063/1.100762
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Wada, H., Horikawa, H., Matsui, Y., Ogawa, Y., Kawai, Y. (1989) High‐power and high‐speed 1.3 μm V‐grooved inner‐stripe lasers with new semi‐insulating current confinement structures onp‐InP substrates. Applied Physics Letters, 55 (8). 723-725 doi:10.1063/1.101786
Horikawa, H., Oshiba, S., Matoba, A., Kawai, Y. (1987) V‐grooved inner‐stripe laser diodes on ap‐type substrate operating over 100 mW at 1.5 μm wavelength. Applied Physics Letters, 50 (7). 374-376 doi:10.1063/1.98203
Koren, U., Koch, T. L., Corvini, P. J., Miller, B. I., Eisenstein, G., Tucker, R. S., Su, Y. K., Capik, R. J. (1988) High‐power, high‐speed 1.3‐μm semi‐insulating‐blocked distributed‐feedback lasers. Journal of Applied Physics, 64 (9). 4785-4787 doi:10.1063/1.341201
Imanaka, K., Horikawa, H., Matoba, A., Kawai, Y., Sakuta, M. (1984) High power output, low threshold, inner stripe GaInAsP laser diode on ap‐type InP substrate. Applied Physics Letters, 45 (3). 282-283 doi:10.1063/1.95173
Sin, Y. K., Horikawa, H., Kamijoh, T. (1992) High‐power InGaAs‐GaAs strained quantum well lasers with InGaP cladding layers onp‐type GaAs substrates. Journal of Applied Physics, 72 (7). 3212-3214 doi:10.1063/1.351437
Hasenberg, T. C., Garmire, E. (1986) Low threshold, highT0InGaAsP/InP 1.3 μm lasers grown onp‐type InP substrates. Applied Physics Letters, 49 (7). 400-402 doi:10.1063/1.97600
Joma, M., Horikawa, H., Matsui, Y., Kamijoh, T. (1991) High‐power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 58 (20). 2220-2222 doi:10.1063/1.104932
Cheng, W. H., Su, C. B., Buehring, K. D., Huang, S. Y., Pooladdej, J., Wolf, D., Perrachione, D., Renner, D., Hess, K. L., Zehr, S. W. (1987) High‐speed and high‐power 1.3‐μm InGaAsP buried crescent injection lasers with semi‐insulating current blocking layers. Applied Physics Letters, 51 (22). 1783-1785 doi:10.1063/1.98521
Watanabe, A., Yamada, T., Imanaka, K., Horikawa, H., Kawai, Y., Sakuta, M. (1985) AlGaAs/GaAs melt‐etched inner stripe laser diode with self‐aligned structure. Applied Physics Letters, 46 (11). 1023-1025 doi:10.1063/1.95798
Qu, Yi, Liu, C. Y., Yuan, Shu (2004) High-power 1.3‐μm InGaAsN strain-compensated lasers fabricated with pulsed anodic oxidation. Applied Physics Letters, 85 (22). 5149-5151 doi:10.1063/1.1828596
Miller, B. I., Koren, U., Capik, R. J., Su, Y. K. (1987) InGaAsP/InP high‐power semi‐insulating blocked planar buried‐heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy. Applied Physics Letters, 51 (26). 2260-2262 doi:10.1063/1.98903
 
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