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Haase, M. A., Pan, N., Stillman, G. E. (1989) Internal photoemission and band discontinuities at Ga0.47In0.53As‐InP heterojunctions. Applied Physics Letters, 54 (15). 1457-1459 doi:10.1063/1.100696

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Reference TypeJournal (article/letter/editorial)
TitleInternal photoemission and band discontinuities at Ga0.47In0.53As‐InP heterojunctions
JournalApplied Physics Letters
AuthorsHaase, M. A.Author
Pan, N.Author
Stillman, G. E.Author
Year1989 (April 10)Volume54
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.100696Search in ResearchGate
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Mindat Ref. ID8486248Long-form Identifiermindat:1:5:8486248:6
GUID0
Full ReferenceHaase, M. A., Pan, N., Stillman, G. E. (1989) Internal photoemission and band discontinuities at Ga0.47In0.53As‐InP heterojunctions. Applied Physics Letters, 54 (15). 1457-1459 doi:10.1063/1.100696
Plain TextHaase, M. A., Pan, N., Stillman, G. E. (1989) Internal photoemission and band discontinuities at Ga0.47In0.53As‐InP heterojunctions. Applied Physics Letters, 54 (15). 1457-1459 doi:10.1063/1.100696
In(1989, April) Applied Physics Letters Vol. 54 (15) AIP Publishing

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Heiblum, M., Nathan, M. I., Eizenberg, M. (1985) Energy band discontinuities in heterojunctions measured by internal photoemission. Applied Physics Letters, 47 (5). 503-505 doi:10.1063/1.96107
Haase, M. A., Emanuel, M. A., Smith, S. C., Coleman, J. J., Stillman, G. E. (1987) Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodes. Applied Physics Letters, 50 (7). 404-406 doi:10.1063/1.98213
Yow, H. K., Houston, P. A., Hopkinson, M. (1995) Conduction band discontinuities in Ga0.5In0.5P‐AlxGa0.5−xIn0.5P heterojunctions measured by internal photoemission. Applied Physics Letters, 66 (21). 2852-2854 doi:10.1063/1.113451
Windhorn, T. H., Cook, L. W., Haase, M. A., Stillman, G. E. (1983) Electron transport in InP at high electric fields. Applied Physics Letters, 42 (8). 725-727 doi:10.1063/1.94040
Landesman, J. P., Garcia, J. C., Massies, J., Maurel, P., Jezequel, G., Hirtz, J. P., Alnot, P. (1992) Direct determination of the valence‐band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy. Applied Physics Letters, 60 (10). 1241-1243 doi:10.1063/1.107418
Tabatabaie, N., Robbins, V. M., Pan, N., Stillman, G. E. (1985) Impact ionization coefficients in (111) InP. Applied Physics Letters, 46 (2). 182-184 doi:10.1063/1.95676
Waldrop, J. R., Grant, R. W., Kraut, E. A. (1989) Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x‐ray photoemission spectroscopy. Applied Physics Letters, 54 (19). 1878-1880 doi:10.1063/1.101246
Haase, M. A., Hafich, M. J., Robinson, G. Y. (1991) Internal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes. Applied Physics Letters, 58 (6). 616-618 doi:10.1063/1.104574
Cunningham, B. T., Haase, M. A., McCollum, M. J., Baker, J. E., Stillman, G. E. (1989) Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride. Applied Physics Letters, 54 (19). 1905-1907 doi:10.1063/1.101237
Martin, G., Botchkarev, A., Rockett, A., Morkoç, H. (1996) Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy. Applied Physics Letters, 68 (18). 2541-2543 doi:10.1063/1.116177
Heiblum, M., Nathan, M.I., Eizenberg, M. (1986) Energy band discontinuities in heterojunctions measured by internal photoemission. Surface Science Letters, 174 (1). doi:10.1016/0167-2584(86)90055-1
 
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