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Haase, M. A., Hafich, M. J., Robinson, G. Y. (1991) Internal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes. Applied Physics Letters, 58 (6). 616-618 doi:10.1063/1.104574

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Reference TypeJournal (article/letter/editorial)
TitleInternal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes
JournalApplied Physics Letters
AuthorsHaase, M. A.Author
Hafich, M. J.Author
Robinson, G. Y.Author
Year1991 (February 11)Volume58
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.104574Search in ResearchGate
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Mindat Ref. ID8494996Long-form Identifiermindat:1:5:8494996:1
GUID0
Full ReferenceHaase, M. A., Hafich, M. J., Robinson, G. Y. (1991) Internal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes. Applied Physics Letters, 58 (6). 616-618 doi:10.1063/1.104574
Plain TextHaase, M. A., Hafich, M. J., Robinson, G. Y. (1991) Internal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes. Applied Physics Letters, 58 (6). 616-618 doi:10.1063/1.104574
In(1991, February) Applied Physics Letters Vol. 58 (6) AIP Publishing

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Chen, Jianhui, Sites, J. R., Spain, I. L., Hafich, M. J., Robinson, G. Y. (1991) Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure. Applied Physics Letters, 58 (7). 744-746 doi:10.1063/1.104534
Haase, M. A., Emanuel, M. A., Smith, S. C., Coleman, J. J., Stillman, G. E. (1987) Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodes. Applied Physics Letters, 50 (7). 404-406 doi:10.1063/1.98213
Wey, Y. G., Crawford, D. L., Giboney, K., Bowers, J. E., Rodwell, M. J., Silvestre, P., Hafich, M. J., Robinson, G. Y. (1991) Ultrafast graded double‐heterostructure GaInAs/InP photodiode. Applied Physics Letters, 58 (19). 2156-2158 doi:10.1063/1.104991
Nanda, A., Hafich, M. J., Vogt, T. J., Woods, L. M., Patrizi, G. A., Robinson, G. Y. (1992) Measurement of Schottky barrier energy on InGaP and InGaAlP films lattice matched to GaAs. Applied Physics Letters, 61 (1). 81-83 doi:10.1063/1.107621
Haase, M. A., Pan, N., Stillman, G. E. (1989) Internal photoemission and band discontinuities at Ga0.47In0.53As‐InP heterojunctions. Applied Physics Letters, 54 (15). 1457-1459 doi:10.1063/1.100696
Coluzza, C., Lama, F., Frova, A., Perfetti, P., Quaresima, C., Capozi, M. (1988) Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission. Journal of Applied Physics, 64 (6). 3304-3306 doi:10.1063/1.341506
Lee, H. Y., Crook, M. D., Hafich, M. J., Quigley, J. H., Robinson, G. Y., Li, D., Otsuka, N. (1989) InGaP/GaAs superlattices grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 55 (22). 2322-2324 doi:10.1063/1.102050
Heiblum, M., Nathan, M. I., Eizenberg, M. (1985) Energy band discontinuities in heterojunctions measured by internal photoemission. Applied Physics Letters, 47 (5). 503-505 doi:10.1063/1.96107
Crumbaker, T. E., Hafich, M. J., Robinson, G. Y., Jones, K. M., Al‐Jassim, M. M., Davis, A., Lorenzo, J. P. (1991) The influence of dislocation density on electron mobility in InP films on Si. Applied Physics Letters, 59 (9). 1090-1092 doi:10.1063/1.106353
Hafich, M. J., Quigley, J. H., Owens, R. E., Robinson, G. Y., Li, Du, Otsuka, N. (1989) High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy. Applied Physics Letters, 54 (26). 2686-2688 doi:10.1063/1.101035
Lao, Yan-Feng, Unil Perera, A. G., Zhang, Y. H., Wang, T. M. (2014) Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy. Applied Physics Letters, 105 (17). 171603pp. doi:10.1063/1.4901040
 
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