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Narayan, J., Srivatsa, A. R., Ravi, K. V. (1989) Mechanism of formation of 〈110〉 oriented fivefold microcrystallites in diamond films. Applied Physics Letters, 54 (17). 1659-1661 doi:10.1063/1.101297

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Reference TypeJournal (article/letter/editorial)
TitleMechanism of formation of 〈110〉 oriented fivefold microcrystallites in diamond films
JournalApplied Physics Letters
AuthorsNarayan, J.Author
Srivatsa, A. R.Author
Ravi, K. V.Author
Year1989 (April 24)Volume54
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.101297Search in ResearchGate
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Mindat Ref. ID8486356Long-form Identifiermindat:1:5:8486356:4
GUID0
Full ReferenceNarayan, J., Srivatsa, A. R., Ravi, K. V. (1989) Mechanism of formation of 〈110〉 oriented fivefold microcrystallites in diamond films. Applied Physics Letters, 54 (17). 1659-1661 doi:10.1063/1.101297
Plain TextNarayan, J., Srivatsa, A. R., Ravi, K. V. (1989) Mechanism of formation of 〈110〉 oriented fivefold microcrystallites in diamond films. Applied Physics Letters, 54 (17). 1659-1661 doi:10.1063/1.101297
In(1989, April) Applied Physics Letters Vol. 54 (17) AIP Publishing

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Narayan, J., Srivatsa, A. R., Peters, M., Yokota, S., Ravi, K. V. (1988) On epitaxial growth of diamond films on (100) silicon substrates. Applied Physics Letters, 53 (19). 1823-1825 doi:10.1063/1.99791
Biunno, N., Narayan, J., Hofmeister, S. K., Srivatsa, A. R., Singh, R. K. (1989) Low‐temperature processing of titanium nitride films by laser physical vapor deposition. Applied Physics Letters, 54 (16). 1519-1521 doi:10.1063/1.101338
Biunno, N., Narayan, J., Srivatsa, A. R., Holland, O. W. (1989) Laser deposition of epitaxial titanium nitride films on (100) MgO. Applied Physics Letters, 55 (4). 405-407 doi:10.1063/1.101881
Albin, S., Watkins, L., Ravi, K., Yokota, S. (1989) Diamond films for laser hardening. Applied Physics Letters, 54 (26). 2728-2730 doi:10.1063/1.101004
Landstrass, M. I., Ravi, K. V. (1989) Resistivity of chemical vapor deposited diamond films. Applied Physics Letters, 55 (10). 975-977 doi:10.1063/1.101694
Bhosle, V., Prater, J. T., Narayan, J. (2007) Anisotropic magnetic properties in [110] oriented epitaxial La0.7Sr0.3MnO3 films on (0001) sapphire. Journal of Applied Physics, 102 (1). 13527pp. doi:10.1063/1.2751118
Landstrass, M. I., Ravi, K. V. (1989) Hydrogen passivation of electrically active defects in diamond. Applied Physics Letters, 55 (14). 1391-1393 doi:10.1063/1.101604
Godbole, V. P., Jagannadham, K., Narayan, J. (1995) Nucleation and growth of diamond films on aluminum nitride coated nickel. Applied Physics Letters, 67 (9). 1322-1324 doi:10.1063/1.114527
Singh, R. K., Narayan, J., Singh, A. K., Krishnaswamy, J. (1989) Insituprocessing of epitaxial Y‐Ba‐Cu‐O highTcsuperconducting films on (100) SrTiO3and (100) YS‐ZrO2substrates at 500–650 °C. Applied Physics Letters, 54 (22). 2271-2273 doi:10.1063/1.101520
Srivatsa, A. R., Sharan, S., Holland, O. W., Narayan, J. (1989) Nature of interfaces and oxidation processes in Ge+‐implanted Si. Journal of Applied Physics, 65 (10). 4028-4032 doi:10.1063/1.343325
Oktyabrsky, S., Dovidenko, K., Sharma, A. K., Narayan, J., Joshkin, V. (1999) Cubic GaN formation under nitrogen-deficient conditions. Applied Physics Letters, 74 (17). 2465-2467 doi:10.1063/1.123882
 
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