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Landstrass, M. I., Ravi, K. V. (1989) Hydrogen passivation of electrically active defects in diamond. Applied Physics Letters, 55 (14). 1391-1393 doi:10.1063/1.101604

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen passivation of electrically active defects in diamond
JournalApplied Physics Letters
AuthorsLandstrass, M. I.Author
Ravi, K. V.Author
Year1989 (October 2)Volume55
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.101604Search in ResearchGate
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Mindat Ref. ID8488035Long-form Identifiermindat:1:5:8488035:8
GUID0
Full ReferenceLandstrass, M. I., Ravi, K. V. (1989) Hydrogen passivation of electrically active defects in diamond. Applied Physics Letters, 55 (14). 1391-1393 doi:10.1063/1.101604
Plain TextLandstrass, M. I., Ravi, K. V. (1989) Hydrogen passivation of electrically active defects in diamond. Applied Physics Letters, 55 (14). 1391-1393 doi:10.1063/1.101604
In(1989, October) Applied Physics Letters Vol. 55 (14) AIP Publishing

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Landstrass, M. I., Ravi, K. V. (1989) Resistivity of chemical vapor deposited diamond films. Applied Physics Letters, 55 (10). 975-977 doi:10.1063/1.101694
Landstrass, M. I., Fleetwood, D. M. (1990) Total dose radiation hardness of diamond‐based silicon‐on‐insulator structures. Applied Physics Letters, 56 (23). 2316-2318 doi:10.1063/1.102929
Mimila-Arroyo, J., Barbé, M., Jomard, F., Chevallier, J., di Forte-Poisson, M. A., Delage, S. L., Dua., C. (2007) Deuterium passivation of electrically active defects in nonintentionally doped n-GaN. Applied Physics Letters, 90 (7). 72107pp. doi:10.1063/1.2539542
Schauer, S. N., Flemish, J. R., Wittstruck, R., Landstrass, M. I., Plano, M. A. (1994) Phosphorus incorporation in plasma deposited diamond films. Applied Physics Letters, 64 (9). 1094-1096 doi:10.1063/1.110943
Tsu, Raphael, Nicollian, Edward H., Reisman, Arnold (1989) Passivation of defects in polycrystalline superlattices and quantum well structures. Applied Physics Letters, 55 (18). 1897-1899 doi:10.1063/1.102328
Graham, R. J., Ravi, K. V. (1992) Cathodoluminescence investigation of impurities and defects in single crystal diamond grown by the combustion‐flame method. Applied Physics Letters, 60 (11). 1310-1312 doi:10.1063/1.107326
Narayan, J., Srivatsa, A. R., Ravi, K. V. (1989) Mechanism of formation of 〈110〉 oriented fivefold microcrystallites in diamond films. Applied Physics Letters, 54 (17). 1659-1661 doi:10.1063/1.101297
Sandhu, G. S., Swanson, M. L., Chu, W. K. (1989) Doping of diamond by coimplantation of carbon and boron. Applied Physics Letters, 55 (14). 1397-1399 doi:10.1063/1.101605
Hoinkis, M., Weber, E. R., Landstrass, M. I., Plano, M. A., Han, S., Kania, D. R. (1991) Paramagnetic nitrogen in chemical vapor deposition diamond thin films. Applied Physics Letters, 59 (15). 1870-1871 doi:10.1063/1.106172
Mimila-Arroyo, J., BarbĂ©, M., Jomard, F., Chevallier, J., di Forte-Poisson, M. A., Delage, S. L., Dua, C. (2007) Erratum: “Deuterium passivation of electrically active defects in nonintentionally doped n-GaN” [Appl. Phys. Lett. 90, 072107 (2007)]. Applied Physics Letters, 91 (2). 29901pp. doi:10.1063/1.2754368
Balducci, A., Marinelli, Marco, Milani, E., Morgada, M. E., Pucella, G., Rodriguez, G., Tucciarone, A., Verona-Rinati, G., Angelone, M., Pillon, M. (2005) Distribution of electrically active defects in chemical vapor deposition diamond: Model and measurement. Applied Physics Letters, 86 (2). 22108pp. doi:10.1063/1.1842856
 
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