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Subramanian, S., Anand, S., Chakravarty, S., Arora, B. M. (1989) Alloy broadening of the emission barrier of theDXcenter in aluminum gallium arsenide. Applied Physics Letters, 54 (2). 145-147 doi:10.1063/1.101211

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Reference TypeJournal (article/letter/editorial)
TitleAlloy broadening of the emission barrier of theDXcenter in aluminum gallium arsenide
JournalApplied Physics Letters
AuthorsSubramanian, S.Author
Anand, S.Author
Chakravarty, S.Author
Arora, B. M.Author
Year1989 (January 9)Volume54
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.101211Search in ResearchGate
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Mindat Ref. ID8486601Long-form Identifiermindat:1:5:8486601:1
GUID0
Full ReferenceSubramanian, S., Anand, S., Chakravarty, S., Arora, B. M. (1989) Alloy broadening of the emission barrier of theDXcenter in aluminum gallium arsenide. Applied Physics Letters, 54 (2). 145-147 doi:10.1063/1.101211
Plain TextSubramanian, S., Anand, S., Chakravarty, S., Arora, B. M. (1989) Alloy broadening of the emission barrier of theDXcenter in aluminum gallium arsenide. Applied Physics Letters, 54 (2). 145-147 doi:10.1063/1.101211
In(1989, January) Applied Physics Letters Vol. 54 (2) AIP Publishing

See Also

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Anand, S., Subramanian, S., Arora, B. M. (1990) Evidence for the alloy broadening of the emission and capture rates of theDXcenter from the frequency dependence of capacitance of Schottky barriers on AlxGa1−xAs: Si. Journal of Applied Physics, 67 (2). 1121-1123 doi:10.1063/1.345801
Subramanian, S., Anand, S., Arora, B. M., Lu, Y. C., Bauser, E. (1993) Charge state of theDXcenter in aluminum gallium arsenide from photo-Hall measurements. Physical Review B, 48 (12) 8757-8760 doi:10.1103/physrevb.48.8757
Chakravarty, S., Subramanian, S., Sharma, D. K., Arora, B. M. (1989) Deep‐level admittance spectroscopy ofDXcenters in AlGaAs:Sn. Journal of Applied Physics, 66 (8). 3955-3958 doi:10.1063/1.344029
Subramanian, S., Murawala, P. A., Chandvankar, S. S., Arora, B. M. (1982) Barrier height of Au onn‐GaAs1−xSbxdiodes. Applied Physics Letters, 41 (4). 357-359 doi:10.1063/1.93512
Anand, S., Subramanian, S., Arora, B. M. (1992) Use of low‐frequency capacitance in deep level transient spectroscopy measurements to reduce series resistance effects. Journal of Applied Physics, 72 (8). 3535-3538 doi:10.1063/1.351432
Reed, A. D., Bose, S. S., Stillman, G. E. (1989) Residual carbon acceptor incorporation in gallium arsenide grown by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (13). 1262-1264 doi:10.1063/1.100733
Arora, B. M., Chakravarty, S., Subramanian, S., Polyakov, V. I., Ermakov, M. G., Ermakova, O. N., Perov, P. I. (1993) Deep‐level transient charge spectroscopy of Sn donors in AlxGa1−xAs. Journal of Applied Physics, 73 (4). 1802-1806 doi:10.1063/1.353189
Desnica, U. V., Šantić, B. (1989) Optically enhanced photoconductivity in semi‐insulating gallium arsenide. Applied Physics Letters, 54 (9). 810-812 doi:10.1063/1.100854
Snow, E. S., Kirchoefer, S. W., Campbell, P. M., Glembocki, O. J. (1989) Efficient light emission by impact ionization in single‐barrier tunneling devices. Applied Physics Letters, 54 (21). 2124-2126 doi:10.1063/1.101147
Pearton, S. J., Tavendale, A. J. (1983) Hydrogen passivation of grain boundaries in polycrystalline gallium arsenide. Journal of Applied Physics, 54 (2). 1154-1155 doi:10.1063/1.332089
Mooney, P. M., Caswell, N. S., Wright, S. L. (1987) The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs. Journal of Applied Physics, 62 (12). 4786-4797 doi:10.1063/1.338981
 
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