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Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1989) Electron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 54 (2). 117-119 doi:10.1063/1.101224

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Reference TypeJournal (article/letter/editorial)
TitleElectron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsKarasawa, TakeshiAuthor
Ohkawa, KazuhiroAuthor
Mitsuyu, TsuneoAuthor
Year1989 (January 9)Volume54
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.101224Search in ResearchGate
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Mindat Ref. ID8486626Long-form Identifiermindat:1:5:8486626:0
GUID0
Full ReferenceKarasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1989) Electron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 54 (2). 117-119 doi:10.1063/1.101224
Plain TextKarasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1989) Electron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 54 (2). 117-119 doi:10.1063/1.101224
In(1989, January) Applied Physics Letters Vol. 54 (2) AIP Publishing

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Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1989) MBE-grown ZnTe-ZnS strained-layer superlattices. Journal of Crystal Growth, 95 (1). 547-551 doi:10.1016/0022-0248(89)90463-6
Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1990) Multiple states in surface lattice constant behavior during the molecular beam epitaxial growth of ZnTe‐ZnS strained layer superlattices. Journal of Applied Physics, 68 (9). 4581-4585 doi:10.1063/1.346165
Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1991) Molecular‐beam epitaxial growth and characterization of ZnS‐ZnxCd1−xS strained‐layer superlattices. Journal of Applied Physics, 69 (5). 3226-3230 doi:10.1063/1.348541
Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1990) ZnTeZnS strained-layer superlattices grown by ALE and MBE: Effects of strain on ZnTe incorporation. Journal of Crystal Growth, 101 (1). 118-121 doi:10.1016/0022-0248(90)90948-k
Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1990) Characterization of short-period ZnTe-ZnS superlattices grown by MBE. Journal of Crystal Growth, 99 (1). 464-467 doi:10.1016/0022-0248(90)90565-3
Ohkawa, Kazuhiro, Karasawa, Takeshi, Mitsuyu, Tsuneo (1991) Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l152
Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1993) Photopumped Blue Laser Action in ZnSe-ZnMnSSe Double Heterostructure Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l1657
Ohkawa, Kazuhiro, Yoshii, Shigeo, Takeishi, Hidemi, Tsujimura, Ayumu, Hayashi, Shigeo, Karasawa, Takeshi, Mitsuyu, Tsuneo (1994) Compound-Source Molecular Beam Epitaxy for ZnCdSe/ZnSSe/ZnMgSSe Laser Structure. Japanese Journal of Applied Physics, 33. doi:10.1143/jjap.33.l1673
Vandenberg, J. M., Gershoni, D., Hamm, R. A., Panish, M. B., Temkin, H. (1989) Structural perfection of InGaAs/InP strained‐layer superlattices grown by gas source molecular‐beam epitaxy: A high‐resolution x‐ray diffraction study. Journal of Applied Physics, 66 (8). 3635-3638 doi:10.1063/1.344072
Shen, Aidong, Wang, Hailong, Wang, Zhijiang, Lü, Shaozhe (1992) Absorption spectra of ZnSe‐ZnS strained‐layer superlattices grown on (001) GaAs by molecular beam epitaxy. Applied Physics Letters, 60 (21). 2640-2641 doi:10.1063/1.106880
Nishi, Kenichi, Hirose, Kazuyuki, Mizutani, Takashi (1986) Optical characterization of InGaAs‐InAlAs strained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 49 (13). 794-796 doi:10.1063/1.97549
 
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