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Shen, Aidong, Wang, Hailong, Wang, Zhijiang, Lü, Shaozhe (1992) Absorption spectra of ZnSe‐ZnS strained‐layer superlattices grown on (001) GaAs by molecular beam epitaxy. Applied Physics Letters, 60 (21). 2640-2641 doi:10.1063/1.106880

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Reference TypeJournal (article/letter/editorial)
TitleAbsorption spectra of ZnSe‐ZnS strained‐layer superlattices grown on (001) GaAs by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsShen, AidongAuthor
Wang, HailongAuthor
Wang, ZhijiangAuthor
Lü, ShaozheAuthor
Year1992 (May 25)Volume60
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.106880Search in ResearchGate
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Mindat Ref. ID8498797Long-form Identifiermindat:1:5:8498797:0
GUID0
Full ReferenceShen, Aidong, Wang, Hailong, Wang, Zhijiang, Lü, Shaozhe (1992) Absorption spectra of ZnSe‐ZnS strained‐layer superlattices grown on (001) GaAs by molecular beam epitaxy. Applied Physics Letters, 60 (21). 2640-2641 doi:10.1063/1.106880
Plain TextShen, Aidong, Wang, Hailong, Wang, Zhijiang, Lü, Shaozhe (1992) Absorption spectra of ZnSe‐ZnS strained‐layer superlattices grown on (001) GaAs by molecular beam epitaxy. Applied Physics Letters, 60 (21). 2640-2641 doi:10.1063/1.106880
In(1992, May) Applied Physics Letters Vol. 60 (21) AIP Publishing

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Cui, Jie, Wang, Hai‐Long, Gan, Fu‐Xi, Huang, Xu‐Guang, Cai, Zhi‐Gang, Li, Qing‐Xing, Yu, Zhen‐Xin (1992) Picosecond transient photoluminescence spectra of ZnSe‐ZnS strained‐layer superlattices grown on GaAs(001) by molecular beam epitaxy. Applied Physics Letters, 61 (13). 1540-1542 doi:10.1063/1.107489
Shen, Aidong, Xu, Liang, Wang, Hailong, Chen, Yunliang, Wang, Zhijiang, Li, A.Z. (1993) Undoped and Sb-doped ZnSe-based II–VI superlattices grown by molecular beam epitaxy. Journal of Crystal Growth, 127 (1). 383-386 doi:10.1016/0022-0248(93)90644-c
Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1989) Electron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 54 (2). 117-119 doi:10.1063/1.101224
Heller, E. J., Lagally, M. G. (1992) Insituscanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxy. Applied Physics Letters, 60 (21). 2675-2677 doi:10.1063/1.106892
Wang, J., Wang, X., Zhu, Z. Q., Yao, T. (1995) Optical characterization of ZnSe/ZnSxSe1−x superlattices pseudomorphically grown on GaAs(100) substrates by molecular beam epitaxy. Journal of Applied Physics, 77 (6). 2709-2713 doi:10.1063/1.358739
Taike, Akira, Teraguchi, Nobuaki, Konagai, Makoto, Takahashi, Kiyoshi (1987) Growth of ZnSe-ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l989
Poudoulec, A., Guenais, B., D’Anterroches, C., Auvray, P., Baudet, M., Regreny, A. (1992) Comparative study of interface structure in GaAs/AlAs superlattices grown by molecular beam epitaxy on (001) GaAs substrates misoriented towards (111)Gaor (111)Asplane. Applied Physics Letters, 60 (19). 2406-2408 doi:10.1063/1.106987
Yokogawa, Toshiya, Saitoh, Tohru, Narusawa, Tadashi (1991) Optical characterization of ZnSe/ZnS strained‐layer superlattices grown on CaF2substrates. Applied Physics Letters, 58 (16). 1754-1756 doi:10.1063/1.105080
Webb, James B., Yousefi, G. H., Rousina, R. (1992) InSb/In1−xAlxSb strained‐layer superlattices grown by magnetron sputter epitaxy. Applied Physics Letters, 60 (8). 998-1000 doi:10.1063/1.106457
Nishi, Kenichi, Hirose, Kazuyuki, Mizutani, Takashi (1986) Optical characterization of InGaAs‐InAlAs strained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 49 (13). 794-796 doi:10.1063/1.97549
Zhang, Qiang, Charles, William, Li, Bingsheng, Shen, Aidong, Meriles, Carlos A., Tamargo, Maria C. (2009) Control of crystal orientation of CdTe epitaxial layers grown on (001) GaAs with ZnSe buffer layer by molecular beam epitaxy. Journal of Crystal Growth, 311 (9). 2603-2607 doi:10.1016/j.jcrysgro.2009.02.045
 
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