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Ahrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Vernon, S. M., Dixon, T. M., Tobin, S. P., Miller, K. L., Hayes, R. E. (1989) Ultralong minority‐carrier lifetime epitaxial GaAs by photon recycling. Applied Physics Letters, 55 (11). 1088-1090 doi:10.1063/1.101713

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Reference TypeJournal (article/letter/editorial)
TitleUltralong minority‐carrier lifetime epitaxial GaAs by photon recycling
JournalApplied Physics Letters
AuthorsAhrenkiel, R. K.Author
Dunlavy, D. J.Author
Keyes, BrianAuthor
Vernon, S. M.Author
Dixon, T. M.Author
Tobin, S. P.Author
Miller, K. L.Author
Hayes, R. E.Author
Year1989 (September 11)Volume55
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.101713Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487838Long-form Identifiermindat:1:5:8487838:0
GUID0
Full ReferenceAhrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Vernon, S. M., Dixon, T. M., Tobin, S. P., Miller, K. L., Hayes, R. E. (1989) Ultralong minority‐carrier lifetime epitaxial GaAs by photon recycling. Applied Physics Letters, 55 (11). 1088-1090 doi:10.1063/1.101713
Plain TextAhrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Vernon, S. M., Dixon, T. M., Tobin, S. P., Miller, K. L., Hayes, R. E. (1989) Ultralong minority‐carrier lifetime epitaxial GaAs by photon recycling. Applied Physics Letters, 55 (11). 1088-1090 doi:10.1063/1.101713
In(1989, September) Applied Physics Letters Vol. 55 (11) AIP Publishing

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Ahrenkiel, R. K., Al‐Jassim, M. M., Dunlavy, D. J., Jones, K. M., Vernon, S. M., Tobin, S. P., Haven, V. E. (1988) Minority‐carrier properties of GaAs on silicon. Applied Physics Letters, 53 (3). 222-224 doi:10.1063/1.100137
Olson, J. M., Ahrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Kibbler, A. E. (1989) Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces. Applied Physics Letters, 55 (12). 1208-1210 doi:10.1063/1.101656
Ahrenkiel, R. K., Dunlavy, D. J., Benner, J., Gale, R. P., McClelland, R. W., Gormley, J. V., King, B. D. (1988) Minority‐carrier lifetime in GaAs thin films. Applied Physics Letters, 53 (7). 598-599 doi:10.1063/1.99867
Ahrenkiel, R. K., Keyes, B. M., Levi, D. L., Emery, K., Chu, T. L., Chu, S. S. (1994) Spatial uniformity of minority‐carrier lifetime in polycrystalline CdTe solar cells. Applied Physics Letters, 64 (21). 2879-2881 doi:10.1063/1.111402
Ahrenkiel, R. K., Keyes, B. M., Dunlavy, D. J. (1991) Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers. Journal of Applied Physics, 70 (1). 225-231 doi:10.1063/1.350315
Ahrenkiel, R. K., Dunlavy, D. J., Loo, R. Y., Kamath, G. S. (1988) Minority‐carrier lifetime inn‐Al0.38Ga0.62As. Journal of Applied Physics, 63 (10). 5174-5176 doi:10.1063/1.340423
Ahrenkiel, R. K., Dunlavy, D. J., Hanak, T. (1988) Minority‐carrier lifetime in ITO/InP heterojunctions. Journal of Applied Physics, 64 (4). 1916-1921 doi:10.1063/1.341743
Timmons, M. L., Ahrenkiel, R. K., Al‐Jassim, M. M., Dunlavy, D. J. (1988) Minority‐carrier lifetime measurements and defect‐structure identification for gallium arsenide grown on sapphire by organometallic vapor phase epitaxy. Journal of Applied Physics, 64 (11). 6259-6263 doi:10.1063/1.342084
Ahrenkiel, R. K., Dunlavy, D. J., Hamaker, H. C., Green, R. T., Lewis, C. R., Hayes, R. E., Fardi, H. (1986) Time‐of‐flight studies of minority‐carrier diffusion in AlxGa1−xAs homojunctions. Applied Physics Letters, 49 (12). 725-727 doi:10.1063/1.97580
Timmons, M. L., Colpitts, T. S., Venkatasubramanian, R., Keyes, B. M., Dunlavy, D. J., Ahrenkiel, R. K. (1990) Measurement of AlGaAs/AlGaAs interface recombination velocities using time‐resolved photoluminescence. Applied Physics Letters, 56 (19). 1850-1852 doi:10.1063/1.103066
Keyes, B. M., Ahrenkiel, R. K., Shaw, G. J., Summers, G. P. (1997) Minority-carrier lifetime damage coefficient of irradiated InP. Journal of Applied Physics, 82 (5). 2156-2163 doi:10.1063/1.366023
 
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