Vote for your favorite mineral in #MinCup25! - Pollucite vs. Tugtupite
It's the cesium #pollucite against the optical changeling #tugtupite for this match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Olson, J. M., Ahrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Kibbler, A. E. (1989) Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces. Applied Physics Letters, 55 (12). 1208-1210 doi:10.1063/1.101656

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleUltralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
JournalApplied Physics Letters
AuthorsOlson, J. M.Author
Ahrenkiel, R. K.Author
Dunlavy, D. J.Author
Keyes, BrianAuthor
Kibbler, A. E.Author
Year1989 (September 18)Volume55
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.101656Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487867Long-form Identifiermindat:1:5:8487867:2
GUID0
Full ReferenceOlson, J. M., Ahrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Kibbler, A. E. (1989) Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces. Applied Physics Letters, 55 (12). 1208-1210 doi:10.1063/1.101656
Plain TextOlson, J. M., Ahrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Kibbler, A. E. (1989) Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces. Applied Physics Letters, 55 (12). 1208-1210 doi:10.1063/1.101656
In(1989, September) Applied Physics Letters Vol. 55 (12) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Ahrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Vernon, S. M., Dixon, T. M., Tobin, S. P., Miller, K. L., Hayes, R. E. (1989) Ultralong minority‐carrier lifetime epitaxial GaAs by photon recycling. Applied Physics Letters, 55 (11). 1088-1090 doi:10.1063/1.101713
Olson, J. M., Kurtz, S. R., Kibbler, A. E., Faine, P. (1990) A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell. Applied Physics Letters, 56 (7). 623-625 doi:10.1063/1.102717
Timmons, M. L., Colpitts, T. S., Venkatasubramanian, R., Keyes, B. M., Dunlavy, D. J., Ahrenkiel, R. K. (1990) Measurement of AlGaAs/AlGaAs interface recombination velocities using time‐resolved photoluminescence. Applied Physics Letters, 56 (19). 1850-1852 doi:10.1063/1.103066
Ahrenkiel, R. K., Keyes, B. M., Dunlavy, D. J. (1991) Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers. Journal of Applied Physics, 70 (1). 225-231 doi:10.1063/1.350315
Kurtz, Sarah R., Olson, J. M., Kibbler, A. (1990) Effect of growth rate on the band gap of Ga0.5In0.5P. Applied Physics Letters, 57 (18). 1922-1924 doi:10.1063/1.104013
Bertness, K. A., Kurtz, Sarah R., Friedman, D. J., Kibbler, A. E., Kramer, C., Olson, J. M. (1994) 29.5%‐efficient GaInP/GaAs tandem solar cells. Applied Physics Letters, 65 (8). 989-991 doi:10.1063/1.112171
Ahrenkiel, R. K., Al‐Jassim, M. M., Dunlavy, D. J., Jones, K. M., Vernon, S. M., Tobin, S. P., Haven, V. E. (1988) Minority‐carrier properties of GaAs on silicon. Applied Physics Letters, 53 (3). 222-224 doi:10.1063/1.100137
Ahrenkiel, R. K., Dunlavy, D. J., Benner, J., Gale, R. P., McClelland, R. W., Gormley, J. V., King, B. D. (1988) Minority‐carrier lifetime in GaAs thin films. Applied Physics Letters, 53 (7). 598-599 doi:10.1063/1.99867
Ahrenkiel, R. K., Dunlavy, D. J., Greenberg, D., Schlupmann, J., Hamaker, H. C., MacMillan, H. F. (1987) Electron mobility inp‐GaAs by time of flight. Applied Physics Letters, 51 (10). 776-778 doi:10.1063/1.98864
Keyes, B. M., Dunlavy, D. J., Ahrenkiel, R. K., Shaw, G., Summers, G. P., Tzafaras, N., Lentz, C. (1994) Time‐resolved photoluminescence of undoped InP. Journal of Applied Physics, 75 (8). 4249-4251 doi:10.1063/1.355962
Ahrenkiel, R. K., Matson, R. J., Osterwald, C. R., Dunlavy, D. J., Kazmerski, L. L. (1985) Minority‐carrier diffusion and recombination in CdZnS/CuInSe2solar cells. Journal of Applied Physics, 58 (3). 1362-1365 doi:10.1063/1.336108
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 8, 2025 21:37:46
Go to top of page