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Shiau, F. Y., Chang, Y. A. (1989) Amorphous phase formation by solid‐state reaction between polycrystalline Co thin films and single‐crystal GaAs. Applied Physics Letters, 55 (15). 1510-1512 doi:10.1063/1.101591

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Reference TypeJournal (article/letter/editorial)
TitleAmorphous phase formation by solid‐state reaction between polycrystalline Co thin films and single‐crystal GaAs
JournalApplied Physics Letters
AuthorsShiau, F. Y.Author
Chang, Y. A.Author
Year1989 (October 9)Volume55
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.101591Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8488090Long-form Identifiermindat:1:5:8488090:5
GUID0
Full ReferenceShiau, F. Y., Chang, Y. A. (1989) Amorphous phase formation by solid‐state reaction between polycrystalline Co thin films and single‐crystal GaAs. Applied Physics Letters, 55 (15). 1510-1512 doi:10.1063/1.101591
Plain TextShiau, F. Y., Chang, Y. A. (1989) Amorphous phase formation by solid‐state reaction between polycrystalline Co thin films and single‐crystal GaAs. Applied Physics Letters, 55 (15). 1510-1512 doi:10.1063/1.101591
In(1989, October) Applied Physics Letters Vol. 55 (15) AIP Publishing

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Cheng, J. Y., Chen, L. J. (1991) Formation of amorphous interlayers by solid‐state diffusion in ultrahigh‐vacuum‐deposited polycrystalline Nb and Ta thin films on (111)Si. Applied Physics Letters, 58 (1). 45-47 doi:10.1063/1.104438
Cheng, J. Y., Chen, L. J. (1990) Formation of amorphous interlayers by a solid‐state diffusion in Zr and Hf thin films on silicon. Applied Physics Letters, 56 (5). 457-459 doi:10.1063/1.102764
Herd, S., Tu, K. N., Ahn, K. Y. (1983) Formation of an amorphous Rh‐Si alloy by interfacial reaction between amorphous Si and crystalline Rh thin films. Applied Physics Letters, 42 (7). 597-599 doi:10.1063/1.94014
Hakuraku, Y., Higo, S., Ogushi, T. (1989) Highly oriented Bi(Pb)‐Sr‐Ca‐Cu‐O superconducting thin films by magnetron sputtering of a single target. Applied Physics Letters, 55 (15). 1569-1571 doi:10.1063/1.102307
Genut, M., Eizenberg, M. (1987) Compound formation at the interface between cobalt thin films and single‐crystal GaAs. Applied Physics Letters, 50 (19). 1358-1360 doi:10.1063/1.97855
Chen, Y. G., Liu, B. X. (1996) Amorphous films formed by solid‐state reaction in an immiscible Y–Mo system and their structural relaxation. Applied Physics Letters, 68 (22). 3096-3098 doi:10.1063/1.116434
Cheng, J. Y., Chen, L. J. (1990) Growth kinetics of amorphous interlayers by solid‐state diffusion in polycrystalline Zr and Hf thin films on (111)Si. Journal of Applied Physics, 68 (8). 4002-4007 doi:10.1063/1.346262
Deutscher, G., Lereah, Y. (1988) Phase separation by coupled single-crystal growth and polycrystalline fingering in Al-Ge: Experiment. Physical Review Letters, 60 (15). 1510-1513 doi:10.1103/physrevlett.60.1510
Rubin, J. B., Schwarz, R. B. (1989) Kinetics of the solid‐state amorphizing reaction in thin films studied by electrical resistivity. Applied Physics Letters, 55 (1). 36-38 doi:10.1063/1.101747
Lur, W., Chen, L. J. (1989) Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin‐film and single‐crystal silicon. Applied Physics Letters, 54 (13). 1217-1219 doi:10.1063/1.100720
Cheng, J. Y., Chen, L. J. (1991) Growth kinetics of amorphous interlayers by solid‐state diffusion in ultrahigh vacuum deposited polycrystalline Nb and Ta thin films on (111)Si. Journal of Applied Physics, 69 (4). 2161-2168 doi:10.1063/1.348744
 
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