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Chuang, S.‐F., Collins, S. D., Smith, R. L. (1989) Porous silicon microstructure as studied by transmission electron microscopy. Applied Physics Letters, 55 (15). 1540-1542 doi:10.1063/1.102239

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Reference TypeJournal (article/letter/editorial)
TitlePorous silicon microstructure as studied by transmission electron microscopy
JournalApplied Physics Letters
AuthorsChuang, S.‐F.Author
Collins, S. D.Author
Smith, R. L.Author
Year1989 (October 9)Volume55
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.102239Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8488099Long-form Identifiermindat:1:5:8488099:6
GUID0
Full ReferenceChuang, S.‐F., Collins, S. D., Smith, R. L. (1989) Porous silicon microstructure as studied by transmission electron microscopy. Applied Physics Letters, 55 (15). 1540-1542 doi:10.1063/1.102239
Plain TextChuang, S.‐F., Collins, S. D., Smith, R. L. (1989) Porous silicon microstructure as studied by transmission electron microscopy. Applied Physics Letters, 55 (15). 1540-1542 doi:10.1063/1.102239
In(1989, October) Applied Physics Letters Vol. 55 (15) AIP Publishing

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Chuang, S.‐F., Collins, S. D., Smith, R. L. (1989) Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study. Applied Physics Letters, 55 (7). 675-677 doi:10.1063/1.101819
Smith, R. L., Collins, S. D. (1992) Porous silicon formation mechanisms. Journal of Applied Physics, 71 (8). doi:10.1063/1.350839
Teschke, Omar (1996) Visualization of nanostructured porous silicon by a combination of transmission electron microscopy and atomic force microscopy. Applied Physics Letters, 68 (15). 2129-2131 doi:10.1063/1.115607
Shih, S., Jung, K. H., Qian, R.‐Z., Kwong, D. L. (1993) Transmission electron microscopy study of chemically etched porous Si. Applied Physics Letters, 62 (5). 467-469 doi:10.1063/1.108935
Cullis, A. G., Smith, P. W., Parbrook, P. J., Cockayne, B., Wright, P. J., Williams, G. M. (1989) Structure of hexagonal and cubic CdS heteroepitaxial layers on GaAs studied by transmission electron microscopy. Applied Physics Letters, 55 (20). 2081-2083 doi:10.1063/1.102114
Boninelli, S., Mirabella, S., Bruno, E., Priolo, F., Cristiano, F., Claverie, A., De Salvador, D., Bisognin, G., Napolitani, E. (2007) Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy. Applied Physics Letters, 91 (3). 31905pp. doi:10.1063/1.2757145
Hayashi, T., Endo, M., Dresselhaus, M. S. (2000) Polyparaphenylene-based low-temperature carbons studied by transmission electron microscopy. Applied Physics Letters, 77 (8). 1141-1143 doi:10.1063/1.1289653
Howitt, D. G., Chen, S. J., Gierhart, B. C., Smith, R. L., Collins, S. D. (2008) The electron beam hole drilling of silicon nitride thin films. Journal of Applied Physics, 103 (2). 24310pp. doi:10.1063/1.2828157
Von Neida, A. E., Pearton, S. J., Hobson, W. S., Abernathy, C. R. (1989) Interaction of Be and O in GaAs. Applied Physics Letters, 54 (16). 1540-1542 doi:10.1063/1.101344
Yao, J. Y., Andersson, T. G., Dunlop, G. L. (1988) Structure of lattice‐strained InxGa1−xAs/GaAs layers studied by transmission electron microscopy. Applied Physics Letters, 53 (15). 1420-1422 doi:10.1063/1.99960
Pennycook, S. J., Narayan, J. (1984) Direct imaging of dopant distributions in silicon by scanning transmission electron microscopy. Applied Physics Letters, 45 (4). 385-387 doi:10.1063/1.95229
 
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