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Haddad, Sameer, Cagnina, Sal (1989) Dynamic behavior of negative charge trapping in thin silicon oxide. Applied Physics Letters, 55 (17). 1747-1749 doi:10.1063/1.102319

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Reference TypeJournal (article/letter/editorial)
TitleDynamic behavior of negative charge trapping in thin silicon oxide
JournalApplied Physics Letters
AuthorsHaddad, SameerAuthor
Cagnina, SalAuthor
Year1989 (October 23)Volume55
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.102319Search in ResearchGate
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Mindat Ref. ID8488276Long-form Identifiermindat:1:5:8488276:3
GUID0
Full ReferenceHaddad, Sameer, Cagnina, Sal (1989) Dynamic behavior of negative charge trapping in thin silicon oxide. Applied Physics Letters, 55 (17). 1747-1749 doi:10.1063/1.102319
Plain TextHaddad, Sameer, Cagnina, Sal (1989) Dynamic behavior of negative charge trapping in thin silicon oxide. Applied Physics Letters, 55 (17). 1747-1749 doi:10.1063/1.102319
In(1989, October) Applied Physics Letters Vol. 55 (17) AIP Publishing

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Powell, M. J. (1983) Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors. Applied Physics Letters, 43 (6). 597-599 doi:10.1063/1.94399
Bustillo, James, Chang, Chi, Haddad, Sameer, Wang, Arthur (1991) Enhanced impurity diffusion resulting from rapid thermal nitridation of thin SiO2. Applied Physics Letters, 58 (17). 1872-1874 doi:10.1063/1.105058
Kalejs, J. P., Rajendran, S. (1989) Model for diffusion and trapping of hydrogen in crystalline silicon. Applied Physics Letters, 55 (26). 2763-2765 doi:10.1063/1.101947
Misra, D. (1999) Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate. Applied Physics Letters, 75 (15). 2283-2285 doi:10.1063/1.124991
Pan, Tung-Ming, Yu, Te-Yi (2008) Silicon-oxide-nitride-oxide-silicon-type flash memory with a high-k NdTiO3 charge trapping layer. Applied Physics Letters, 92 (11). 112906pp. doi:10.1063/1.2898215
Pan, Tung-Ming, Chen, Jing-Wei (2008) Metal-oxide-high-k-oxide-silicon memory structure using an Yb2O3 charge trapping layer. Applied Physics Letters, 93 (18). 183510pp. doi:10.1063/1.3021360
d’Heurle, F. M. (1989) Comment on ‘‘Diffusion of Si in thin CoSi2layers’’ [Appl. Phys. Lett.54, 1314 (1989)]. Applied Physics Letters, 55 (17). 1804 doi:10.1063/1.102324
Severi, Maurizio, Impronta, Maurizio (1987) Charge trapping in thin nitrided SiO2films. Applied Physics Letters, 51 (21). 1702-1704 doi:10.1063/1.98549
Pan, Tung-Ming, Jung, Ji-Shing, Chen, Fa-Hsyang (2010) Metal-oxide-high-k-oxide-silicon memory structure incorporating a Tb2O3 charge trapping layer. Applied Physics Letters, 97 (1). 12906pp. doi:10.1063/1.3462321
Lim, P. S., Chim, W. K. (2000) Anomalous positive charge trapping in thin nitrided oxides under high-field impulse stressing. Applied Physics Letters, 77 (17). 2719-2721 doi:10.1063/1.1320041
Liu, Zhenhong, Toprasertpong, Kasidit, Cai, Zuocheng, Takenaka, Mitsuru, Takagi, Shinichi (2024) Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film. Applied Physics Letters, 125 (7) doi:10.1063/5.0212368
 
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