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Hsieh, T. Y., Chun, H. G., Kwong, D. L. (1989) Selective deposition ofinsitudoped polycrystalline silicon by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 55 (23). 2408-2410 doi:10.1063/1.102029

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Reference TypeJournal (article/letter/editorial)
TitleSelective deposition ofinsitudoped polycrystalline silicon by rapid thermal processing chemical vapor deposition
JournalApplied Physics Letters
AuthorsHsieh, T. Y.Author
Chun, H. G.Author
Kwong, D. L.Author
Year1989 (December 4)Volume55
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.102029Search in ResearchGate
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Mindat Ref. ID8488766Long-form Identifiermindat:1:5:8488766:1
GUID0
Full ReferenceHsieh, T. Y., Chun, H. G., Kwong, D. L. (1989) Selective deposition ofinsitudoped polycrystalline silicon by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 55 (23). 2408-2410 doi:10.1063/1.102029
Plain TextHsieh, T. Y., Chun, H. G., Kwong, D. L. (1989) Selective deposition ofinsitudoped polycrystalline silicon by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 55 (23). 2408-2410 doi:10.1063/1.102029
In(1989, December) Applied Physics Letters Vol. 55 (23) AIP Publishing

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Hsieh, T. Y., Jung, K. H., Kim, Y. M., Kwong, D. L. (1991) Dopant‐enhanced low‐temperature epitaxial growth ofinsitudoped silicon by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 58 (1). 80-82 doi:10.1063/1.104452
Hsieh, T. Y., Jung, K. H., Kwong, D. L., Spratt, D. B. (1990) Selective epitaxial growth with oxide‐polycrystalline silicon‐oxide masks by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 57 (9). 872-874 doi:10.1063/1.103392
Hsieh, T. Y., Jung, K. H., Kwong, D. L. (1990) Silicon epitaxial growth on silicon‐on‐insulator structures by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 57 (23). 2425-2427 doi:10.1063/1.103865
Lee, S. K., Ku, Y. H., Kwong, D. L. (1989) Silicon epitaxial growth by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 54 (18). 1775-1777 doi:10.1063/1.101288
Jung, K. H., Hsieh, T. Y., Kwong, D. L., Liu, H. Y., Brennan, R. (1992) Insitudoping of GedxSi1−xwith arsenic by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 60 (6). 724-726 doi:10.1063/1.106549
Lee, S. K., Ku, Y. H., Hsieh, T. Y., Jung, K. H., Kwong, D. L., Spratt, David, Chu, P. (1990) Growth ofinsitudoped silicon epitaxial layer by rapid thermal processing. Applied Physics Letters, 57 (16). 1628-1630 doi:10.1063/1.104069
Hsieh, T. Y., Jung, K. H., Kwong, D. L., Kim, Y. M., Brennan, R. (1992) Boron‐enhanced low‐temperature Si epitaxy by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 61 (4). 474-476 doi:10.1063/1.107861
Hsieh, T. Y., Chun, H. G., Kwong, D. L., Spratt, D. B. (1990) Shallow junction formation by dopant diffusion frominsitudoped polycrystalline silicon chemically vapor deposited in a rapid thermal processor. Applied Physics Letters, 56 (18). 1778-1780 doi:10.1063/1.103097
Jung, K. H., Hsieh, T. Y., Kwong, D. L. (1991) Defect reduction in GexSi1−xepitaxy by rapid thermal processing chemical vapor deposition using a low‐temperatureinsitupreclean and a Si buffer layer. Applied Physics Letters, 58 (21). 2348-2350 doi:10.1063/1.104893
Jung, K. H., Kim, Y. M., Kwong, D. L. (1990) Relaxed GexSi1−xfilms grown by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 56 (18). 1775-1777 doi:10.1063/1.103096
Lee, S. K., Ku, Y. H., Hsieh, T. Y., Jung, K., Kwong, D. L. (1990) Selective epitaxial growth by rapid thermal processing. Applied Physics Letters, 57 (3). 273-275 doi:10.1063/1.103712
 
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