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Lee, S. K., Ku, Y. H., Hsieh, T. Y., Jung, K., Kwong, D. L. (1990) Selective epitaxial growth by rapid thermal processing. Applied Physics Letters, 57 (3). 273-275 doi:10.1063/1.103712

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Reference TypeJournal (article/letter/editorial)
TitleSelective epitaxial growth by rapid thermal processing
JournalApplied Physics Letters
AuthorsLee, S. K.Author
Ku, Y. H.Author
Hsieh, T. Y.Author
Jung, K.Author
Kwong, D. L.Author
Year1990 (July 16)Volume57
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.103712Search in ResearchGate
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Mindat Ref. ID8492811Long-form Identifiermindat:1:5:8492811:7
GUID0
Full ReferenceLee, S. K., Ku, Y. H., Hsieh, T. Y., Jung, K., Kwong, D. L. (1990) Selective epitaxial growth by rapid thermal processing. Applied Physics Letters, 57 (3). 273-275 doi:10.1063/1.103712
Plain TextLee, S. K., Ku, Y. H., Hsieh, T. Y., Jung, K., Kwong, D. L. (1990) Selective epitaxial growth by rapid thermal processing. Applied Physics Letters, 57 (3). 273-275 doi:10.1063/1.103712
In(1990, July) Applied Physics Letters Vol. 57 (3) AIP Publishing

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Lee, S. K., Ku, Y. H., Hsieh, T. Y., Jung, K. H., Kwong, D. L., Spratt, David, Chu, P. (1990) Growth ofinsitudoped silicon epitaxial layer by rapid thermal processing. Applied Physics Letters, 57 (16). 1628-1630 doi:10.1063/1.104069
Hsieh, T. Y., Jung, K. H., Kwong, D. L., Spratt, D. B. (1990) Selective epitaxial growth with oxide‐polycrystalline silicon‐oxide masks by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 57 (9). 872-874 doi:10.1063/1.103392
Hsieh, T. Y., Jung, K. H., Kwong, D. L. (1990) Silicon epitaxial growth on silicon‐on‐insulator structures by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 57 (23). 2425-2427 doi:10.1063/1.103865
Lee, S. K., Ku, Y. H., Kwong, D. L. (1989) Silicon epitaxial growth by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 54 (18). 1775-1777 doi:10.1063/1.101288
Hsieh, T. Y., Jung, K. H., Kim, Y. M., Kwong, D. L. (1991) Dopant‐enhanced low‐temperature epitaxial growth ofinsitudoped silicon by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 58 (1). 80-82 doi:10.1063/1.104452
Jung, K. H., Hsieh, T. Y., Kwong, D. L., Liu, H. Y., Brennan, R. (1992) Insitudoping of GedxSi1−xwith arsenic by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 60 (6). 724-726 doi:10.1063/1.106549
Hsieh, T. Y., Jung, K. H., Kwong, D. L., Kim, Y. M., Brennan, R. (1992) Boron‐enhanced low‐temperature Si epitaxy by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 61 (4). 474-476 doi:10.1063/1.107861
Jung, K. H., Kim, Y. M., Kwong, D. L. (1990) Relaxed GexSi1−xfilms grown by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 56 (18). 1775-1777 doi:10.1063/1.103096
Hsieh, T. Y., Chun, H. G., Kwong, D. L. (1989) Selective deposition ofinsitudoped polycrystalline silicon by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 55 (23). 2408-2410 doi:10.1063/1.102029
Shih, D. K., Chang, W. T., Lee, S. K., Ku, Y. H., Kwong, D. L., Lee, S. (1988) Metal‐oxide‐semiconductor characteristics of rapid thermal nitrided thin oxides. Applied Physics Letters, 52 (20). 1698-1700 doi:10.1063/1.99710
Ku, Y. H., Lee, S. K., Shih, D. K., Kwong, D. L., Lee, C‐O, Yeargain, J. R. (1988) Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing. Applied Physics Letters, 52 (11). 877-879 doi:10.1063/1.99643
 
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