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Partovi, Afshin, Garmire, Elsa M., Valley, George C., Klein, Marvin B. (1989) Photorefractive characterization of deep level compensation in semi‐insulating GaAs. Applied Physics Letters, 55 (26). 2701-2703 doi:10.1063/1.101929

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Reference TypeJournal (article/letter/editorial)
TitlePhotorefractive characterization of deep level compensation in semi‐insulating GaAs
JournalApplied Physics Letters
AuthorsPartovi, AfshinAuthor
Garmire, Elsa M.Author
Valley, George C.Author
Klein, Marvin B.Author
Year1989 (December 25)Volume55
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.101929Search in ResearchGate
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Mindat Ref. ID8488940Long-form Identifiermindat:1:5:8488940:1
GUID0
Full ReferencePartovi, Afshin, Garmire, Elsa M., Valley, George C., Klein, Marvin B. (1989) Photorefractive characterization of deep level compensation in semi‐insulating GaAs. Applied Physics Letters, 55 (26). 2701-2703 doi:10.1063/1.101929
Plain TextPartovi, Afshin, Garmire, Elsa M., Valley, George C., Klein, Marvin B. (1989) Photorefractive characterization of deep level compensation in semi‐insulating GaAs. Applied Physics Letters, 55 (26). 2701-2703 doi:10.1063/1.101929
In(1989, December) Applied Physics Letters Vol. 55 (26) AIP Publishing

See Also

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Partovi, Afshin, Kost, Alan, Garmire, Elsa M., Valley, George C., Klein, Marvin B. (1990) Band‐edge photorefractive effect in semiconductors. Applied Physics Letters, 56 (12). 1089-1091 doi:10.1063/1.102576
Millerd, James E., Koehler, Steffen D., Garmire, Elsa M., Partovi, Afshin, Glass, Alastair M., Klein, Marvin B. (1990) Photorefractive gain enhancement in InP:Fe using band‐edge resonance and temperature stabilization. Applied Physics Letters, 57 (26). 2776-2778 doi:10.1063/1.103784
Partovi, Afshin, Garmire, Elsa M., Cheng, Li‐Jen (1987) Enhanced beam coupling modulation using the polarization properties of photorefractive GaAs. Applied Physics Letters, 51 (5). 299-301 doi:10.1063/1.98449
Partovi, Afshin, Millerd, James, Garmire, Elsa M., Ziari, Mehrdad, Steier, William H., Trivedi, Sudhir B., Klein, Marvin B. (1990) Photorefractivity at 1.5 μm in CdTe:V. Applied Physics Letters, 57 (9). 846-848 doi:10.1063/1.103409
Partovi, Afshin, Garmire, Elsa M. (1991) Band‐edge photorefractivity in semiconductors: Theory and experiment. Journal of Applied Physics, 69 (10). 6885-6898 doi:10.1063/1.347678
Huang, Man‐fang, Garmire, Elsa, Partovi, Afshin, Hong, Minghwei (1995) Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain. Applied Physics Letters, 66 (6). 736-738 doi:10.1063/1.114116
Huang, Man‐fang, Garmire, Elsa, Partovi, Afshin, Hong, Minghwei (1995) Erratum: ‘‘Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structure under external anisotropic strain’’ [Appl. Phys. Lett. 66, 736 (1995)]. Applied Physics Letters, 67 (26). 3983 doi:10.1063/1.115557
Cheng, Li‐Jen, Partovi, Afshin (1986) Temperature and intensity dependence of photorefractive effect in GaAs. Applied Physics Letters, 49 (21). 1456-1458 doi:10.1063/1.97301
Alt, H. Ch., Neef, M., von Philipsborn, H. (1989) Contrast phenomena of band‐band and deep level photoluminescence topographs in annealed semi‐insulating GaAs. Applied Physics Letters, 55 (19). 1972-1974 doi:10.1063/1.102136
Valley, George C., McCahon, Stephen W., Klein, Marvin B. (1988) Photorefractive measurement of photoionization and recombination cross sections in InP:Fe. Journal of Applied Physics, 64 (12). 6684-6689 doi:10.1063/1.342024
Canoglu, Ergun, Yang, Ching‐Mei, Garmire, Elsa, Mahgerefteh, Daniel, Partovi, A., Chiu, T. H., Zydzik, G. J. (1996) Carrier transport in a photorefractive multiple quantum well device. Applied Physics Letters, 69 (3). 316-318 doi:10.1063/1.118045
 
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