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Huang, Man‐fang, Garmire, Elsa, Partovi, Afshin, Hong, Minghwei (1995) Erratum: ‘‘Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structure under external anisotropic strain’’ [Appl. Phys. Lett. 66, 736 (1995)]. Applied Physics Letters, 67 (26). 3983 doi:10.1063/1.115557

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Reference TypeJournal (article/letter/editorial)
TitleErratum: ‘‘Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structure under external anisotropic strain’’ [Appl. Phys. Lett. 66, 736 (1995)]
JournalApplied Physics Letters
AuthorsHuang, Man‐fangAuthor
Garmire, ElsaAuthor
Partovi, AfshinAuthor
Hong, MinghweiAuthor
Year1995 (December 25)Volume67
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.115557Search in ResearchGate
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Mindat Ref. ID8515087Long-form Identifiermindat:1:5:8515087:4
GUID0
Full ReferenceHuang, Man‐fang, Garmire, Elsa, Partovi, Afshin, Hong, Minghwei (1995) Erratum: ‘‘Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structure under external anisotropic strain’’ [Appl. Phys. Lett. 66, 736 (1995)]. Applied Physics Letters, 67 (26). 3983 doi:10.1063/1.115557
Plain TextHuang, Man‐fang, Garmire, Elsa, Partovi, Afshin, Hong, Minghwei (1995) Erratum: ‘‘Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structure under external anisotropic strain’’ [Appl. Phys. Lett. 66, 736 (1995)]. Applied Physics Letters, 67 (26). 3983 doi:10.1063/1.115557
In(1995, December) Applied Physics Letters Vol. 67 (26) AIP Publishing

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Huang, Man‐fang, Garmire, Elsa, Partovi, Afshin, Hong, Minghwei (1995) Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain. Applied Physics Letters, 66 (6). 736-738 doi:10.1063/1.114116
Huang, Man-Fang, Garmire, Elsa, Kuo, Yen-Kuang (2000) Absorption Anisotropy for Lattice Matched GaAs/AlGaAs Multiple Quantum Well Structures under External Anisotropic Biaxial Strain: Compression along [110] and Tension along [\bar110]. Japanese Journal of Applied Physics, 39. 1776-1781 doi:10.1143/jjap.39.1776
Man, P., Pan, D. S. (1995) Comment on ‘‘Calculation of resonant absorption and photoresponse measurement in p‐type GaAs/AlGaAs quantum wells’’ [Appl. Phys. Lett. 66, 1659 (1995)]. Applied Physics Letters, 67 (24). 3653-3654 doi:10.1063/1.115349
Szmulowicz, Frank, Brown, Gail J. (1995) Response to ‘‘Comment on ‘Calculation of resonant absorption and photoresponse measurement in p‐type GaAs/AlGaAs quantum wells’ ’’ [Appl. Phys. Lett. 67, 3653 (1995)]. Applied Physics Letters, 67 (24). 3655-3656 doi:10.1063/1.115350
Erskine, D. J., Taylor, A. J., Tang, C. L. (1985) Erratum: Femtosecond studies of intraband relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structures [Appl. Phys. Lett. 45, 54 (1984)]. Applied Physics Letters, 46 (6). 614 doi:10.1063/1.95928
Hozhabri, N., Lee, S.‐H., Alavi, K. (1995) Erratum: ‘‘Infrared measurements in annealed molecular beam epitaxy GaAs grown at low temperature’’ [Appl. Phys. Lett. 66, 2546 (1995)]. Applied Physics Letters, 67 (7). 1036 doi:10.1063/1.115561
Rode, D. L., Gaskill, D. K. (1995) Erratum: ‘‘Electron Hall mobility of n‐GaN’’ [Appl. Phys. Lett. 66, 1972 (1995)]. Applied Physics Letters, 67 (16). 2418 doi:10.1063/1.115554
Yu, X. Y., Chen, G., Verma, A., Smith, J. S. (1996) Erratum: ‘‘Temperature dependence of thermophysical properties of GaAs/AlAs periodic structure’’ [Appl. Phys. Lett. 67, 3554 (1995)]. Applied Physics Letters, 68 (9). 1303 doi:10.1063/1.116798
Moriarty, P., Beton, P. H., Wolf, D. A. (1995) Erratum: ‘‘Atomic scale modifications of GaAs using a scanning tunneling microscope’’ [Appl. Phys. Lett. 66, 1515 (1995)]. Applied Physics Letters, 66 (25). 3527 doi:10.1063/1.114228
Dubard, J., Oudar, J. L., Alexandre, F., Hulin, D., Orszag, A. (1987) Erratum: Ultrafast absorption recovery due to stimulated emission in GaAs/AlGaAs multiple quantum wells [Appl. Phys. Lett. 50, 821 (1987)]. Applied Physics Letters, 50 (23). 1696 doi:10.1063/1.98270
Partovi, Afshin, Garmire, Elsa M., Valley, George C., Klein, Marvin B. (1989) Photorefractive characterization of deep level compensation in semi‐insulating GaAs. Applied Physics Letters, 55 (26). 2701-2703 doi:10.1063/1.101929
 
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