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Tuppen, C. G., Gibbings, C. J., Hockly, M., Roberts, S. G. (1990) Misfit dislocation multiplication processes in Si1−xGexalloys forx<0.15. Applied Physics Letters, 56 (1). 54-56 doi:10.1063/1.102645

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Reference TypeJournal (article/letter/editorial)
TitleMisfit dislocation multiplication processes in Si1−xGexalloys forx<0.15
JournalApplied Physics Letters
AuthorsTuppen, C. G.Author
Gibbings, C. J.Author
Hockly, M.Author
Roberts, S. G.Author
Year1990 (January)Volume56
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.102645Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8489541Long-form Identifiermindat:1:5:8489541:1
GUID0
Full ReferenceTuppen, C. G., Gibbings, C. J., Hockly, M., Roberts, S. G. (1990) Misfit dislocation multiplication processes in Si1−xGexalloys forx<0.15. Applied Physics Letters, 56 (1). 54-56 doi:10.1063/1.102645
Plain TextTuppen, C. G., Gibbings, C. J., Hockly, M., Roberts, S. G. (1990) Misfit dislocation multiplication processes in Si1−xGexalloys forx
In(1990, January) Applied Physics Letters Vol. 56 (1) AIP Publishing

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Tuppen, C. G., Gibbings, C. J., Hockly, M., Halliwell, M. A. G. (1990) Asymmetric strain distributions resulting from deliberately induced misfit dislocations. Applied Physics Letters, 56 (2). 140-142 doi:10.1063/1.103054
Tuppen, C. G., Gibbings, C. J. (1990) A quantitative analysis of strain relaxation by misfit dislocation glide in Si1−xGex/Si heterostructures. Journal of Applied Physics, 68 (4). 1526-1534 doi:10.1063/1.346628
Gibbings, C. J., Tuppen, C. G., Hockly, M. (1989) Dislocation nucleation and propagation in Si0.95Ge0.05layers on silicon. Applied Physics Letters, 54 (2). 148-150 doi:10.1063/1.101212
Tuppen, C.G., Gibbings, C.J., Hockly, M. (1989) The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values. Journal of Crystal Growth, 94 (2). 392-404 doi:10.1016/0022-0248(89)90014-6
Houghton, D. C., Gibbings, C. J., Tuppen, C. G., Lyons, M. H., Halliwell, M. A. G. (1990) Equilibrium critical thickness for Si1−xGexstrained layers on (100) Si. Applied Physics Letters, 56 (5). 460-462 doi:10.1063/1.102765
White, J. D., Fasol, G., Ghanbari, R. A., Gell, M. A., Gibbings, C. J., Tuppen, C. G. (1990) Optical detection of biatomic sheets of silicon in Si/Ge superlattices. Applied Physics Letters, 57 (15). 1523-1525 doi:10.1063/1.104092
Ghanbari, R. A., White, J. D., Fasol, G., Gibbings, C. J., Tuppen, C. G. (1990) Phonon frequencies for Si-Ge strained-layer superlattices calculated in a three-dimensional model. Physical Review B, 42 (11) 7033-7041 doi:10.1103/physrevb.42.7033
White, J. D., Fasol, G., Ghanbari, R. A., Gell, M. A., Gibbings, C. J., Tuppen, C. G. (1991) Vibrational properties of Si/Ge superlattices incorporating biatomic sheets of silicon and germanium. Physical Review B, 43 (2) 1685-1691 doi:10.1103/physrevb.43.1685
Tuppen, C. G., Prior, K. A., Gibbings, C. J., Houghton, D. C., Jackman, T. E. (1988) Oxygen incorporation in molecular‐beam epitaxial silicon doped using a boric oxide source. Journal of Applied Physics, 64 (5). 2751-2754 doi:10.1063/1.341619
Houghton, D. C. (1990) Misfit dislocation dynamics in Si1−xGex/(100) Si: Uncapped alloy layers, buried strained layers, and multiple quantum wells. Applied Physics Letters, 57 (14). 1434-1436 doi:10.1063/1.103457
Noble, D. B., Hoyt, J. L., King, C. A., Gibbons, J. F., Kamins, T. I., Scott, M. P. (1990) Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas. Applied Physics Letters, 56 (1). 51-53 doi:10.1063/1.103176
 
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