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Gibbings, C. J., Tuppen, C. G., Hockly, M. (1989) Dislocation nucleation and propagation in Si0.95Ge0.05layers on silicon. Applied Physics Letters, 54 (2). 148-150 doi:10.1063/1.101212

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Reference TypeJournal (article/letter/editorial)
TitleDislocation nucleation and propagation in Si0.95Ge0.05layers on silicon
JournalApplied Physics Letters
AuthorsGibbings, C. J.Author
Tuppen, C. G.Author
Hockly, M.Author
Year1989 (January 9)Volume54
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.101212Search in ResearchGate
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Mindat Ref. ID8486602Long-form Identifiermindat:1:5:8486602:0
GUID0
Full ReferenceGibbings, C. J., Tuppen, C. G., Hockly, M. (1989) Dislocation nucleation and propagation in Si0.95Ge0.05layers on silicon. Applied Physics Letters, 54 (2). 148-150 doi:10.1063/1.101212
Plain TextGibbings, C. J., Tuppen, C. G., Hockly, M. (1989) Dislocation nucleation and propagation in Si0.95Ge0.05layers on silicon. Applied Physics Letters, 54 (2). 148-150 doi:10.1063/1.101212
In(1989, January) Applied Physics Letters Vol. 54 (2) AIP Publishing

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Tuppen, C. G., Gibbings, C. J., Hockly, M., Roberts, S. G. (1990) Misfit dislocation multiplication processes in Si1−xGexalloys forx<0.15. Applied Physics Letters, 56 (1). 54-56 doi:10.1063/1.102645
Tuppen, C. G., Gibbings, C. J., Hockly, M., Halliwell, M. A. G. (1990) Asymmetric strain distributions resulting from deliberately induced misfit dislocations. Applied Physics Letters, 56 (2). 140-142 doi:10.1063/1.103054
Tuppen, C.G., Gibbings, C.J., Hockly, M. (1989) The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values. Journal of Crystal Growth, 94 (2). 392-404 doi:10.1016/0022-0248(89)90014-6
White, J. D., Fasol, G., Ghanbari, R. A., Gell, M. A., Gibbings, C. J., Tuppen, C. G. (1990) Optical detection of biatomic sheets of silicon in Si/Ge superlattices. Applied Physics Letters, 57 (15). 1523-1525 doi:10.1063/1.104092
Tuppen, C. G., Gibbings, C. J. (1990) A quantitative analysis of strain relaxation by misfit dislocation glide in Si1−xGex/Si heterostructures. Journal of Applied Physics, 68 (4). 1526-1534 doi:10.1063/1.346628
Houghton, D. C., Gibbings, C. J., Tuppen, C. G., Lyons, M. H., Halliwell, M. A. G. (1990) Equilibrium critical thickness for Si1−xGexstrained layers on (100) Si. Applied Physics Letters, 56 (5). 460-462 doi:10.1063/1.102765
Tuppen, C. G., Prior, K. A., Gibbings, C. J., Houghton, D. C., Jackman, T. E. (1988) Oxygen incorporation in molecular‐beam epitaxial silicon doped using a boric oxide source. Journal of Applied Physics, 64 (5). 2751-2754 doi:10.1063/1.341619
White, J. D., Fasol, G., Ghanbari, R. A., Gell, M. A., Gibbings, C. J., Tuppen, C. G. (1991) Vibrational properties of Si/Ge superlattices incorporating biatomic sheets of silicon and germanium. Physical Review B, 43 (2) 1685-1691 doi:10.1103/physrevb.43.1685
Steele, A. G., Lenchyshyn, L. C., Thewalt, M. L. W. (1990) Photoluminescence study of nitrogen‐oxygen donors in silicon. Applied Physics Letters, 56 (2). 148-150 doi:10.1063/1.103059
Hack, M., Shur, M., Tsai, C. C. (1989) Amorphous silicon photoconductive diode. Applied Physics Letters, 54 (2). 96-98 doi:10.1063/1.101200
Perry, A. J., Boswell, R. W. (1989) Fast anisotropic etching of silicon in an inductively coupled plasma reactor. Applied Physics Letters, 55 (2). 148-150 doi:10.1063/1.102127
 
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