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Pinarbasi, Mustafa, Abelson, John R., Kushner, Mark J. (1990) Reduced Staebler–Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films. Applied Physics Letters, 56 (17). 1685-1687 doi:10.1063/1.103117

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Reference TypeJournal (article/letter/editorial)
TitleReduced Staebler–Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films
JournalApplied Physics Letters
AuthorsPinarbasi, MustafaAuthor
Abelson, John R.Author
Kushner, Mark J.Author
Year1990 (April 23)Volume56
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.103117Search in ResearchGate
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Mindat Ref. ID8490077Long-form Identifiermindat:1:5:8490077:7
GUID0
Full ReferencePinarbasi, Mustafa, Abelson, John R., Kushner, Mark J. (1990) Reduced Staebler–Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films. Applied Physics Letters, 56 (17). 1685-1687 doi:10.1063/1.103117
Plain TextPinarbasi, Mustafa, Abelson, John R., Kushner, Mark J. (1990) Reduced Staebler–Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films. Applied Physics Letters, 56 (17). 1685-1687 doi:10.1063/1.103117
In(1990, April) Applied Physics Letters Vol. 56 (17) AIP Publishing

See Also

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Pinarbasi, Mustafa, Kushner, Mark J., Abelson, John R. (1990) Effect of hydrogen content on the light induced defect generation in direct current magnetron reactively sputtered hydrogenated amorphous silicon thin films. Journal of Applied Physics, 68 (5). 2255-2264 doi:10.1063/1.346530
Güneş, Mehmet, Wronski, Christopher R. (1997) Differences in the densities of charged defect states and kinetics of Staebler–Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films. Journal of Applied Physics, 81 (8). 3526-3536 doi:10.1063/1.365000
Du, Mao-Hua, Zhang, S. B. (2005) Topological defects and the Staebler-Wronski effect in hydrogenated amorphous silicon. Applied Physics Letters, 87 (19). 191903pp. doi:10.1063/1.2130381
Stutzmann, M., Jackson, W. B., Tsai, C. C. (1984) Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon. Applied Physics Letters, 45 (10). 1075-1077 doi:10.1063/1.95020
Shimizu, Tatsuo (2004) Staebler-Wronski Effect in Hydrogenated Amorphous Silicon and Related Alloy Films. Japanese Journal of Applied Physics, 43 (6) 3257-3268 doi:10.1143/jjap.43.3257
Prasad, Rajendra, Shenoy, Subodh R. (1996) Staebler-Wronski effect in hydrogenated amorphous silicon. Physics Letters A, 218. 85-90 doi:10.1016/0375-9601(96)00389-1
Moustakas, T. D., Wronski, C. R., Tiedje, T. (1981) Electron‐hole recombination in reactively sputtered amorphous silicon solar cells. Applied Physics Letters, 39 (9). 721-723 doi:10.1063/1.92861
Kounavis, P. (1995) Changes in the trapping and recombination process of hydrogenated amorphous silicon in the Staebler–Wronski effect. Journal of Applied Physics, 77 (8). 3872-3878 doi:10.1063/1.358565
Staebler, D. L., Wronski, C. R. (1980) Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon. Journal of Applied Physics, 51 (6). 3262-3268 doi:10.1063/1.328084
Drüsedau, T., Schröder, B. (1992) Influence of silicon on the properties of reactively sputtered hydrogenated amorphous germanium. Applied Physics Letters, 61 (5). 566-568 doi:10.1063/1.107838
Biswas, R., Pan, B. C. (1998) Microscopic nature of Staebler-Wronski defect formation in amorphous silicon. Applied Physics Letters, 72 (3). 371-373 doi:10.1063/1.120740
 
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