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Lee, J. H., Hsieh, K. Y., Hwang, Y. L., Kolbas, R. M. (1990) Stimulated emission from monolayer‐thick AlxGa1−xAs‐GaAs single quantum well heterostructures. Applied Physics Letters, 56 (7). 626-628 doi:10.1063/1.102718

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Reference TypeJournal (article/letter/editorial)
TitleStimulated emission from monolayer‐thick AlxGa1−xAs‐GaAs single quantum well heterostructures
JournalApplied Physics Letters
AuthorsLee, J. H.Author
Hsieh, K. Y.Author
Hwang, Y. L.Author
Kolbas, R. M.Author
Year1990 (February 12)Volume56
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.102718Search in ResearchGate
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Mindat Ref. ID8491152Long-form Identifiermindat:1:5:8491152:4
GUID0
Full ReferenceLee, J. H., Hsieh, K. Y., Hwang, Y. L., Kolbas, R. M. (1990) Stimulated emission from monolayer‐thick AlxGa1−xAs‐GaAs single quantum well heterostructures. Applied Physics Letters, 56 (7). 626-628 doi:10.1063/1.102718
Plain TextLee, J. H., Hsieh, K. Y., Hwang, Y. L., Kolbas, R. M. (1990) Stimulated emission from monolayer‐thick AlxGa1−xAs‐GaAs single quantum well heterostructures. Applied Physics Letters, 56 (7). 626-628 doi:10.1063/1.102718
In(1990, February) Applied Physics Letters Vol. 56 (7) AIP Publishing

See Also

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Lo, Y. C., Hsieh, K. Y., Kolbas, R. M. (1988) Stimulated emission in ultrathin (20 Å) AlxGa1−xAs‐GaAs single quantum well heterostructures. Applied Physics Letters, 52 (22). 1853-1855 doi:10.1063/1.99619
Lee, J. H., Hsieh, K. Y., Kolbas, R. M. (1990) Photoluminescence and stimulated emission from monolayer-thick pseudomorphic InAs single-quantum-well heterostructures. Physical Review B, 41 (11) 7678-7684 doi:10.1103/physrevb.41.7678
Lee, J. H., Hsieh, K. Y., Hwang, Y. L., Kolbas, R. M. (1990) Stimulated visible light emission from ultrathin GaAs single and multiple quantum wells sandwiched between indirect‐gap (Al0.49Ga0.51As) confining layers. Applied Physics Letters, 56 (20). 1998-2000 doi:10.1063/1.102998
Lee, G. S., Hsieh, K. Y., Kolbas, R. M. (1986) Room‐temperature negative differential resistance in strained‐layer GaAs‐AlGaAs‐InGaAs quantum well heterostructures. Applied Physics Letters, 49 (22). 1528-1530 doi:10.1063/1.97271
Holonyak, N., Kolbas, R. M., Laidig, W. D., Vojak, B. A., Hess, K., Dupuis, R. D., Dapkus, P. D. (1980) Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures. Journal of Applied Physics, 51 (3). 1328-1337 doi:10.1063/1.327818
Lee, Y. R., Ramdas, A. K., Chambers, F. A., Meese, J. M., Ram Mohan, L. R. (1987) Piezomodulated electronic spectra of semiconductor heterostructures: GaAs/AlxGa1−xAs quantum well structures. Applied Physics Letters, 50 (10). 600-602 doi:10.1063/1.98093
Anderson, N. G., Laidig, W. D., Kolbas, R. M., Lo, Y. C. (1986) Optical characterization of pseudomorphic InxGa1−xAs–GaAs single‐quantum‐well heterostructures. Journal of Applied Physics, 60 (7). 2361-2367 doi:10.1063/1.337146
Sin, Y. K., Hsieh, K. Y., Lee, J. H., Hwang, Y., Kolbas, R. M. (1991) InGaAs‐GaAs‐AlGaAs strained‐layer laser with heavy silicon doping. Journal of Applied Physics, 70 (2). 568-573 doi:10.1063/1.349657
Dallesasse, J. M., El‐Zein, N., Holonyak, N., Hsieh, K. C., Burnham, R. D., Dupuis, R. D. (1990) Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures. Journal of Applied Physics, 68 (5). 2235-2238 doi:10.1063/1.346527
Meehan, K., Brown, J. M., Camras, M. D., Holonyak, N., Burnham, R. D., Paoli, T. L., Streifer, W. (1984) Impurity‐induced disordering of single well AlxGa1−xAs‐GaAs quantum well heterostructures. Applied Physics Letters, 44 (4). 428-430 doi:10.1063/1.94798
Meehan, K., Hsieh, K. C., Costrini, G., Kaliski, R. W., Holonyak, N., Coleman, J. J. (1986) Stacking and layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures. Applied Physics Letters, 48 (13). 861-863 doi:10.1063/1.96692
 
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