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(1990, February) Applied Physics Letters Vol. 56 (7) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1990 (February)Volume56
Issue<   7   >
PublisherAIP Publishing
Mindat Ref. ID8491129Long-form Identifiermindat:1:5:8491129:6
GUID0
Full Reference(1990, February) Applied Physics Letters Vol. 56 (7) AIP Publishing
Plain Text(1990, February) Applied Physics Letters Vol. 56 (7) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 56. AIP Publishing

Contains

Lee, Song Jae, Ramaswamy, Ramu V., Zory, Peter S., Figueroa, Luis (1990) Buried‐ridge striped planar GaAlAs/GaAs lasers with a wide range of effective index steps. Applied Physics Letters, 56 (7). 599-601 doi:10.1063/1.102732
Ehrlich, J. E., Assanto, G., Stegeman, G. I. (1990) All‐optical tuning of waveguide nonlinear distributed feedback gratings. Applied Physics Letters, 56 (7). 602-604 doi:10.1063/1.102710
Schneider, H., Fujiwara, K., Grahn, H. T., Klitzing, K. v., Ploog, K. (1990) Electro‐optical multistability in GaAs/AlAs superlattices at room temperature. Applied Physics Letters, 56 (7). 605-607 doi:10.1063/1.102711
VerdĂșn, Horacio R., Thomas, Leonard M. (1990) Nd:CaYAlO4—a new crystal for solid‐state lasers emitting at 1.08 ÎŒm. Applied Physics Letters, 56 (7). 608-610 doi:10.1063/1.102712
DeFonzo, Alfred P., Gomatam, B. (1990) Gain nonlinearities in semiconductor lasers and amplifiers. Applied Physics Letters, 56 (7). 611-613 doi:10.1063/1.102713
Guzmàn, A., Romagnoli, M., Wabnitz, S. (1990) Self‐induced transparency soliton digital switch. Applied Physics Letters, 56 (7). 614-616 doi:10.1063/1.102714
Salingaros, N. A. (1990) Lorentz force and magnetic stress in force‐free configurations. Applied Physics Letters, 56 (7). 617-619 doi:10.1063/1.102715
Lee, Y. H., Richard, P. D., Bachmann, K. J., Glass, J. T. (1990) Bias‐controlled chemical vapor deposition of diamond thin films. Applied Physics Letters, 56 (7). 620-622 doi:10.1063/1.102716
Olson, J. M., Kurtz, S. R., Kibbler, A. E., Faine, P. (1990) A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell. Applied Physics Letters, 56 (7). 623-625 doi:10.1063/1.102717
Lee, J. H., Hsieh, K. Y., Hwang, Y. L., Kolbas, R. M. (1990) Stimulated emission from monolayer‐thick AlxGa1−xAs‐GaAs single quantum well heterostructures. Applied Physics Letters, 56 (7). 626-628 doi:10.1063/1.102718
Liehr, M., Greenlief, C. M., Kasi, S. R., Offenberg, M. (1990) Kinetics of silicon epitaxy using SiH4in a rapid thermal chemical vapor deposition reactor. Applied Physics Letters, 56 (7). 629-631 doi:10.1063/1.102719
Zachau, M., GrĂŒtzmacher, D. (1990) Electron‐hole transition energies and atomic steps at the interfaces of thin InGaAs/InP quantum wells. Applied Physics Letters, 56 (7). 632-634 doi:10.1063/1.102720
Tatsumi, Toru, Niino, Taeko, Hirayama, Hiroyuki (1990) Silicon etching with oxygen molecular beam assisted by predeposited germanium. Applied Physics Letters, 56 (7). 635-637 doi:10.1063/1.102721
Fornari, R., Kumar, J. (1990) Infrared absorption spectra in bulk Fe‐doped InP. Applied Physics Letters, 56 (7). 638-640 doi:10.1063/1.102722
Jia, Y. Q., Qin, G. G. (1990) Effects of hydrogen on Al/p‐Si Schottky barrier diodes. Applied Physics Letters, 56 (7). 641-643 doi:10.1063/1.102723
Ishimura, E., Kimura, T., Shiba, T., Mihashi, Y., Namizaki, H. (1990) Dark current and diffusion length in InGaAs photodiodes grown on GaAs substrates. Applied Physics Letters, 56 (7). 644-646 doi:10.1063/1.102724
Steiner, T. W., Zhang, Yu., Thewalt, M. L. W., Maciaszek, M., Bult, R. P. (1990) Quantitative, all‐optical prediction of the carrier density in semi‐insulating GaAs. Applied Physics Letters, 56 (7). 647-649 doi:10.1063/1.102725
Kaneko, Yoshiyuki, Koike, Norio, Tsutsui, Ken, Tsukada, Toshihisa (1990) Amorphous silicon phototransistors. Applied Physics Letters, 56 (7). 650-652 doi:10.1063/1.102726
Sano, Nobuyuki, Tomizawa, Masaaki, Yoshii, Akira (1990) Monte Carlo analysis of ionization threshold in Si. Applied Physics Letters, 56 (7). 653-655 doi:10.1063/1.102727
Higashi, G. S., Chabal, Y. J., Trucks, G. W., Raghavachari, Krishnan (1990) Ideal hydrogen termination of the Si (111) surface. Applied Physics Letters, 56 (7). 656-658 doi:10.1063/1.102728
Caridi, E. A., Chang, T. Y., Goossen, K. W., Eastman, L. F. (1990) Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure. Applied Physics Letters, 56 (7). 659-661 doi:10.1063/1.102729
Wei, S.‐H., Zunger, Alex (1990) Band‐gap narrowing in ordered and disordered semiconductor alloys. Applied Physics Letters, 56 (7). 662-664 doi:10.1063/1.103307
Datta, Supriyo, Das, Biswajit (1990) Electronic analog of the electro‐optic modulator. Applied Physics Letters, 56 (7). 665-667 doi:10.1063/1.102730
Look, D. C., Stutz, C. E., Evans, K. R. (1990) Surface and interface free‐carrier depletion in GaAs molecular beam epitaxial layers: Demonstration of high interface charge. Applied Physics Letters, 56 (7). 668-670 doi:10.1063/1.102731
Sullivan, J. P., Hirano, Toshiyuki, Komeda, T., Meyer, H. M., Trafas, B. M., Waddill, G. D., Weaver, J. H. (1990) Reaction and stability of metal/silicide interfaces: Ti/MoSi2 (001). Applied Physics Letters, 56 (7). 671-673 doi:10.1063/1.103308
So, F. F., Forrest, S. R., Shi, Y. Q., Steier, W. H. (1990) Quasi‐epitaxial growth of organic multiple quantum well structures by organic molecular beam deposition. Applied Physics Letters, 56 (7). 674-676 doi:10.1063/1.102733
Terashima, T., Bando, Y., Iijima, K., Yamamoto, K., Hirata, K., Hayashi, K., Matsuda, Y., Komiyama, S. (1990) Insitugrowth of superconducting Nd‐Ce‐Cu‐O thin films. Applied Physics Letters, 56 (7). 677-679 doi:10.1063/1.103309
Zeldov, E., Amer, N. M., Koren, G., Gupta, A., McElfresh, M. W., Gambino, R. J. (1990) Flux creep characteristics in high‐temperature superconductors. Applied Physics Letters, 56 (7). 680-682 doi:10.1063/1.103310
Hirata, K., Yamamoto, K., Iijima, K., Takada, J., Terashima, T., Bando, Y., Mazaki, H. (1990) Tunneling measurements on superconductor/insulator/superconductor junctions using single‐crystal YBa2Cu3O7−xthin films. Applied Physics Letters, 56 (7). 683-685 doi:10.1063/1.103311
Laibowitz, R. B., Koch, R. H., Gupta, A., Koren, G., Gallagher, W. J., Foglietti, V., Oh, B., Viggiano, J. M. (1990) All highTcedge junctions and SQUIDs. Applied Physics Letters, 56 (7). 686-688 doi:10.1063/1.102706
Rosenman, G. I., Letuchev, V. V., Chepelev, Yu. L., Malyshkina, O. V., Shur, V. Ya., Kuminov, V. P. (1990) Emission of electrons on switching of the Gd2(MoO4)3ferroelectric‐ferroelastic in electric field. Applied Physics Letters, 56 (7). 689-691 doi:10.1063/1.103312
Douglas, Kenneth, Clark, Noel A., Rothschild, Kenneth J. (1990) Biomolecular/solid‐state nanoheterostructures. Applied Physics Letters, 56 (7). 692-694 doi:10.1063/1.102685
Brum, Jeffrey L., Tong, Ping, Koplitz, Brent (1990) The 193 nm fragmentation and ionization of trimethylaluminum: Evidence for photoinduced α‐hydrogen elimination. Applied Physics Letters, 56 (7). 695-697 doi:10.1063/1.102686

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