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Higashi, G. S., Chabal, Y. J., Trucks, G. W., Raghavachari, Krishnan (1990) Ideal hydrogen termination of the Si (111) surface. Applied Physics Letters, 56 (7). 656-658 doi:10.1063/1.102728

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Reference TypeJournal (article/letter/editorial)
TitleIdeal hydrogen termination of the Si (111) surface
JournalApplied Physics Letters
AuthorsHigashi, G. S.Author
Chabal, Y. J.Author
Trucks, G. W.Author
Raghavachari, KrishnanAuthor
Year1990 (February 12)Volume56
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.102728Search in ResearchGate
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Mindat Ref. ID8491172Long-form Identifiermindat:1:5:8491172:8
GUID0
Full ReferenceHigashi, G. S., Chabal, Y. J., Trucks, G. W., Raghavachari, Krishnan (1990) Ideal hydrogen termination of the Si (111) surface. Applied Physics Letters, 56 (7). 656-658 doi:10.1063/1.102728
Plain TextHigashi, G. S., Chabal, Y. J., Trucks, G. W., Raghavachari, Krishnan (1990) Ideal hydrogen termination of the Si (111) surface. Applied Physics Letters, 56 (7). 656-658 doi:10.1063/1.102728
In(1990, February) Applied Physics Letters Vol. 56 (7) AIP Publishing

See Also

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Burrows, V. A., Chabal, Y. J., Higashi, G. S., Raghavachari, K., Christman, S. B. (1988) Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology. Applied Physics Letters, 53 (11). 998-1000 doi:10.1063/1.100053
Trucks, G. W., Raghavachari, Krishnan, Higashi, G. S., Chabal, Y. J. (1991) Truckset al. reply. Physical Review Letters, 66 (12). 1648 doi:10.1103/physrevlett.66.1648
Trucks, G. W., Raghavachari, Krishnan, Higashi, G. S., Chabal, Y. J. (1990) Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation. Physical Review Letters, 65 (4). 504-507 doi:10.1103/physrevlett.65.504
Pietsch, G. J., Higashi, G. S., Chabal, Y. J. (1994) Chemomechanical polishing of silicon: Surface termination and mechanism of removal. Applied Physics Letters, 64 (23). 3115-3117 doi:10.1063/1.111365
Pietsch, G. J., Chabal, Y. J., Higashi, G. S. (1995) Infrared‐absorption spectroscopy of Si(100) and Si(111) surfaces after chemomechanical polishing. Journal of Applied Physics, 78 (3). 1650-1658 doi:10.1063/1.360721
Higashi, G. S., Becker, R. S., Chabal, Y. J., Becker, A. J. (1991) Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF. Applied Physics Letters, 58 (15). 1656-1658 doi:10.1063/1.105155
Dumas, P., Chabal, Y. J., Higashi, G. S. (1990) Coupling of an adsorbate vibration to a substrate surface phonon: H on Si(111). Physical Review Letters, 65 (9). 1124-1127 doi:10.1103/physrevlett.65.1124
Chabal, Y. J., Raghavachari, Krishnan (1984) Surface Infrared Study of Si(100)-(2×1)H. Physical Review Letters, 53 (3). 282-285 doi:10.1103/physrevlett.53.282
Becker, R. S., Higashi, G. S., Chabal, Y. J., Becker, A. J. (1990) Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorption. Physical Review Letters, 65 (15). 1917-1920 doi:10.1103/physrevlett.65.1917
Guyot-Sionnest, P., Dumas, P., Chabal, Y. J., Higashi, G. S. (1990) Lifetime of an adsorbate-substrate vibration: H on Si(111). Physical Review Letters, 64 (18). 2156-2159 doi:10.1103/physrevlett.64.2156
Chabal, Y. J., Higashi, G. S., Christman, S. B. (1983) Hydrogen chemisorption on Si(111)-(7×7) and -(1×1) surfaces. A comparative infrared study. Physical Review B, 28 (8) 4472-4479 doi:10.1103/physrevb.28.4472
 
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