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Burrows, V. A., Chabal, Y. J., Higashi, G. S., Raghavachari, K., Christman, S. B. (1988) Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology. Applied Physics Letters, 53 (11). 998-1000 doi:10.1063/1.100053

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Reference TypeJournal (article/letter/editorial)
TitleInfrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology
JournalApplied Physics Letters
AuthorsBurrows, V. A.Author
Chabal, Y. J.Author
Higashi, G. S.Author
Raghavachari, K.Author
Christman, S. B.Author
Year1988 (September 12)Volume53
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.100053Search in ResearchGate
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Mindat Ref. ID8484098Long-form Identifiermindat:1:5:8484098:9
GUID0
Full ReferenceBurrows, V. A., Chabal, Y. J., Higashi, G. S., Raghavachari, K., Christman, S. B. (1988) Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology. Applied Physics Letters, 53 (11). 998-1000 doi:10.1063/1.100053
Plain TextBurrows, V. A., Chabal, Y. J., Higashi, G. S., Raghavachari, K., Christman, S. B. (1988) Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology. Applied Physics Letters, 53 (11). 998-1000 doi:10.1063/1.100053
In(1988, September) Applied Physics Letters Vol. 53 (11) AIP Publishing

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Higashi, G. S., Chabal, Y. J., Trucks, G. W., Raghavachari, Krishnan (1990) Ideal hydrogen termination of the Si (111) surface. Applied Physics Letters, 56 (7). 656-658 doi:10.1063/1.102728
Pietsch, G. J., Chabal, Y. J., Higashi, G. S. (1995) Infrared‐absorption spectroscopy of Si(100) and Si(111) surfaces after chemomechanical polishing. Journal of Applied Physics, 78 (3). 1650-1658 doi:10.1063/1.360721
Chabal, Y. J., Higashi, G. S., Christman, S. B. (1983) Hydrogen chemisorption on Si(111)-(7×7) and -(1×1) surfaces. A comparative infrared study. Physical Review B, 28 (8) 4472-4479 doi:10.1103/physrevb.28.4472
Higashi, G. S., Becker, R. S., Chabal, Y. J., Becker, A. J. (1991) Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF. Applied Physics Letters, 58 (15). 1656-1658 doi:10.1063/1.105155
Trucks, G. W., Raghavachari, Krishnan, Higashi, G. S., Chabal, Y. J. (1990) Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation. Physical Review Letters, 65 (4). 504-507 doi:10.1103/physrevlett.65.504
Zhang, X., Garfunkel, E., Chabal, Y. J., Christman, S. B., Chaban, E. E. (2001) Stability of HF-etched Si(100) surfaces in oxygen ambient. Applied Physics Letters, 79 (24). 4051-4053 doi:10.1063/1.1425461
Pietsch, G. J., Higashi, G. S., Chabal, Y. J. (1994) Chemomechanical polishing of silicon: Surface termination and mechanism of removal. Applied Physics Letters, 64 (23). 3115-3117 doi:10.1063/1.111365
Jakob, P., Chabal, Y. J., Raghavachari, Krishnan, Christman, S. B. (1993) Discrete nature of inhomogeneity on stepped H/Si(111) surfaces: Spectroscopic identification of individual terrace sizes. Physical Review B, 47 (11) 6839-6842 doi:10.1103/physrevb.47.6839
Feijoó, Diego, Chabal, Y. J., Christman, S. B. (1994) Silicon wafer bonding studied by infrared absorption spectroscopy. Applied Physics Letters, 65 (20). 2548-2550 doi:10.1063/1.112631
Reutt-Robey, J. E., Doren, D. J., Chabal, Y. J., Christman, S. B. (1988) Microscopic Co Diffusion on a Pt(111) Surface by Time-Resolved Infrared Spectroscopy. Physical Review Letters, 61 (24). 2778-2781 doi:10.1103/physrevlett.61.2778
vom Felde, A., Kern, K., Higashi, G. S., Chabal, Y. J., Christman, S. B., Bahr, C. C., Cardillo, M. J. (1990) Oxidation of GaAs(110) withNO2: Infrared spectroscopy. Physical Review B, 42 (8) 5240-5248 doi:10.1103/physrevb.42.5240
 
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