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Higashi, G. S., Becker, R. S., Chabal, Y. J., Becker, A. J. (1991) Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF. Applied Physics Letters, 58 (15). 1656-1658 doi:10.1063/1.105155

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Reference TypeJournal (article/letter/editorial)
TitleComparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF
JournalApplied Physics Letters
AuthorsHigashi, G. S.Author
Becker, R. S.Author
Chabal, Y. J.Author
Becker, A. J.Author
Year1991 (April 15)Volume58
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.105155Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8493818Long-form Identifiermindat:1:5:8493818:7
GUID0
Full ReferenceHigashi, G. S., Becker, R. S., Chabal, Y. J., Becker, A. J. (1991) Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF. Applied Physics Letters, 58 (15). 1656-1658 doi:10.1063/1.105155
Plain TextHigashi, G. S., Becker, R. S., Chabal, Y. J., Becker, A. J. (1991) Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF. Applied Physics Letters, 58 (15). 1656-1658 doi:10.1063/1.105155
In(1991, April) Applied Physics Letters Vol. 58 (15) AIP Publishing

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Becker, R. S., Higashi, G. S., Chabal, Y. J., Becker, A. J. (1990) Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorption. Physical Review Letters, 65 (15). 1917-1920 doi:10.1103/physrevlett.65.1917
Pietsch, G. J., Chabal, Y. J., Higashi, G. S. (1995) Infrared‐absorption spectroscopy of Si(100) and Si(111) surfaces after chemomechanical polishing. Journal of Applied Physics, 78 (3). 1650-1658 doi:10.1063/1.360721
Burrows, V. A., Chabal, Y. J., Higashi, G. S., Raghavachari, K., Christman, S. B. (1988) Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology. Applied Physics Letters, 53 (11). 998-1000 doi:10.1063/1.100053
Jakob, P., Dumas, P., Chabal, Y. J. (1991) Influence of silicon oxide on the morphology of HF‐etched Si(111) surfaces: Thermal versus chemical oxide. Applied Physics Letters, 59 (23). 2968-2970 doi:10.1063/1.105814
Higashi, G. S., Chabal, Y. J., Trucks, G. W., Raghavachari, Krishnan (1990) Ideal hydrogen termination of the Si (111) surface. Applied Physics Letters, 56 (7). 656-658 doi:10.1063/1.102728
Becker, R. S., Golovchenko, J. A., Higashi, G. S., Swartzentruber, B. S. (1986) New Reconstructions on Silicon (111) Surfaces. Physical Review Letters, 57 (8). 1020-1023 doi:10.1103/physrevlett.57.1020
Jakob, P., Chabal, Y.J., Raghavachari, Krishnan, Becker, R.S., Becker, A.J. (1992) Kinetic model of the chemical etching of Si(111) surfaces by buffered HF solutions. Surface Science, 275 (3). 407-413 doi:10.1016/0039-6028(92)90813-l
Eaglesham, D. J., Higashi, G. S., Cerullo, M. (1991) 370 °C clean for Si molecular beam epitaxy using a HF dip. Applied Physics Letters, 59 (6). 685-687 doi:10.1063/1.105365
Vinh, Le Thanh, Eddrief, M., SĂ©benne, C. A., Dumas, P., Taleb‐Ibrahimi, A., Gunther, R., Chabal, Y. J., Derrien, J. (1994) Low temperature formation of Si(111)7×7 surfaces from chemically prepared H/Si(111)‐(1×1) surfaces. Applied Physics Letters, 64 (24). 3308-3310 doi:10.1063/1.111288
Yota, J., Burrows, V. A. (1991) An infrared study of thin‐film formation on Si and Ge surfaces treated with aqueous NH4F and HF. Journal of Applied Physics, 69 (10). 7369-7371 doi:10.1063/1.347598
Zhang, X., Garfunkel, E., Chabal, Y. J., Christman, S. B., Chaban, E. E. (2001) Stability of HF-etched Si(100) surfaces in oxygen ambient. Applied Physics Letters, 79 (24). 4051-4053 doi:10.1063/1.1425461
 
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