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Jakob, P., Dumas, P., Chabal, Y. J. (1991) Influence of silicon oxide on the morphology of HF‐etched Si(111) surfaces: Thermal versus chemical oxide. Applied Physics Letters, 59 (23). 2968-2970 doi:10.1063/1.105814

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of silicon oxide on the morphology of HF‐etched Si(111) surfaces: Thermal versus chemical oxide
JournalApplied Physics Letters
AuthorsJakob, P.Author
Dumas, P.Author
Chabal, Y. J.Author
Year1991 (December 2)Volume59
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.105814Search in ResearchGate
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Mindat Ref. ID8496654Long-form Identifiermindat:1:5:8496654:2
GUID0
Full ReferenceJakob, P., Dumas, P., Chabal, Y. J. (1991) Influence of silicon oxide on the morphology of HF‐etched Si(111) surfaces: Thermal versus chemical oxide. Applied Physics Letters, 59 (23). 2968-2970 doi:10.1063/1.105814
Plain TextJakob, P., Dumas, P., Chabal, Y. J. (1991) Influence of silicon oxide on the morphology of HF‐etched Si(111) surfaces: Thermal versus chemical oxide. Applied Physics Letters, 59 (23). 2968-2970 doi:10.1063/1.105814
In(1991, December) Applied Physics Letters Vol. 59 (23) AIP Publishing

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Dumas, P., Chabal, Y.J., Jakob, P. (1992) Morphology of hydrogen-terminated Si(111) and Si(100) surfaces upon etching in HF and buffered-HF solutions. Surface Science, 269. 867-878 doi:10.1016/0039-6028(92)91363-g
Higashi, G. S., Becker, R. S., Chabal, Y. J., Becker, A. J. (1991) Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF. Applied Physics Letters, 58 (15). 1656-1658 doi:10.1063/1.105155
Vinh, Le Thanh, Eddrief, M., Sébenne, C. A., Dumas, P., Taleb‐Ibrahimi, A., Gunther, R., Chabal, Y. J., Derrien, J. (1994) Low temperature formation of Si(111)7×7 surfaces from chemically prepared H/Si(111)‐(1×1) surfaces. Applied Physics Letters, 64 (24). 3308-3310 doi:10.1063/1.111288
Zhang, X., Garfunkel, E., Chabal, Y. J., Christman, S. B., Chaban, E. E. (2001) Stability of HF-etched Si(100) surfaces in oxygen ambient. Applied Physics Letters, 79 (24). 4051-4053 doi:10.1063/1.1425461
Jakob, P., Chabal, Y.J., Raghavachari, Krishnan, Dumas, P., Christman, S.B. (1993) Imperfections on the chemically prepared, ideally H-terminated Si(111)-(1 × 1) surfaces. Surface Science Letters, 285 (3). doi:10.1016/0167-2584(93)90371-o
Jakob, P., Chabal, Y. J. (1991) Chemical etching of vicinal Si(111): Dependence of the surface structure and the hydrogen termination on the pH of the etching solutions. The Journal of Chemical Physics, 95 (4). 2897-2909 doi:10.1063/1.460892
Dumas, P., Chabal, Y.J. (1991) Electron-energy-loss characterization of the H-terminated Si(111) and Si(100) surfaces obtained by etching in NH4F. Chemical Physics Letters, 181. 537-543 doi:10.1016/0009-2614(91)80309-l
Morin, M., Jakob, P., Levinos, N. J., Chabal, Y. J., Harris, A. L. (1992) Vibrational energy transfer on hydrogen‐terminated vicinal Si(111) surfaces: Interadsorbate energy flow. The Journal of Chemical Physics, 96 (8). 6203-6212 doi:10.1063/1.462637
Burrows, V. A., Chabal, Y. J., Higashi, G. S., Raghavachari, K., Christman, S. B. (1988) Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology. Applied Physics Letters, 53 (11). 998-1000 doi:10.1063/1.100053
Dumas, P., Chabal, Y.J., Jakob, P. (1993) Vibrational properties of H/Si(111)-(1 × 1) surfaces: infrared absorption and electron energy loss spectroscopic studies. Applied Surface Science, 65. 580-586 doi:10.1016/0169-4332(93)90722-n
Liu, Li-Hong, Debenedetti, William J. I., Peixoto, Tatiana, Gokalp, Sumeyra, Shafiq, Natis, Veyan, Jean-François, Michalak, David J., Hourani, Rami, Chabal, Yves J. (2014) Morphology and chemical termination of HF-etched Si3N4 surfaces. Applied Physics Letters, 105 (26). 261603pp. doi:10.1063/1.4905282
 
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