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Steiner, T. W., Zhang, Yu., Thewalt, M. L. W., Maciaszek, M., Bult, R. P. (1990) Quantitative, all‐optical prediction of the carrier density in semi‐insulating GaAs. Applied Physics Letters, 56 (7). 647-649 doi:10.1063/1.102725

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Reference TypeJournal (article/letter/editorial)
TitleQuantitative, all‐optical prediction of the carrier density in semi‐insulating GaAs
JournalApplied Physics Letters
AuthorsSteiner, T. W.Author
Zhang, Yu.Author
Thewalt, M. L. W.Author
Maciaszek, M.Author
Bult, R. P.Author
Year1990 (February 12)Volume56
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.102725Search in ResearchGate
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Mindat Ref. ID8491166Long-form Identifiermindat:1:5:8491166:7
GUID0
Full ReferenceSteiner, T. W., Zhang, Yu., Thewalt, M. L. W., Maciaszek, M., Bult, R. P. (1990) Quantitative, all‐optical prediction of the carrier density in semi‐insulating GaAs. Applied Physics Letters, 56 (7). 647-649 doi:10.1063/1.102725
Plain TextSteiner, T. W., Zhang, Yu., Thewalt, M. L. W., Maciaszek, M., Bult, R. P. (1990) Quantitative, all‐optical prediction of the carrier density in semi‐insulating GaAs. Applied Physics Letters, 56 (7). 647-649 doi:10.1063/1.102725
In(1990, February) Applied Physics Letters Vol. 56 (7) AIP Publishing

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Maciaszek, M., Rogers, D. W., Bult, R. P., Steiner, T., Zhang, Yu, Charbonneau, S., Thewalt, M. L. W. (1989) Photoluminescence for characterization of commercial semi-insulating GaAs. Canadian Journal of Physics, 67. 384-388 doi:10.1139/p89-068
Steiner, T., Zhang, Yu, Charbonneau, S., Villemaire, A., Thewalt, M. L. W., Maciaszek, M., Bult, R. P. (1989) Optical techniques for characterizing SI GaAs. Canadian Journal of Physics, 67. 242-250 doi:10.1139/p89-043
Steiner, T. W., Thewalt, M. L. W., Maciaszek, M., Bult, R. P. (1991) A low-temperature, whole-wafer-imaging system for defect and impurity mapping. Canadian Journal of Physics, 69. 333-338 doi:10.1139/p91-056
Villemaire, A., Charbonneau, S., Steiner, T., Thewalt, M. L. W. (1990) Photoluminescence studies of bound excitons in copper‐doped GaAs. Journal of Applied Physics, 67 (9). 4244-4248 doi:10.1063/1.344937
Li, Z.‐M., McAlister, S. P., McMullan, W. G., Hurd, C. M., Day, D. J. (1990) Current‐controlled negative differential conductivity in semi‐insulating GaAs. Applied Physics Letters, 56 (23). 2331-2332 doi:10.1063/1.102910
Steiner, T., Thewalt, M. L. W., Koteles, E. S., Salerno, J. P. (1985) Time‐resolved photoluminescence study of molecular beam epitaxial growth induced defect lines in GaAs. Applied Physics Letters, 47 (3). 257-259 doi:10.1063/1.96183
Look, D. C., Yu, P. W., Theis, W. M., Ford, W., Mathur, G., Sizelove, J. R., Lee, D. H., Li, S. S. (1986) Semiconducting/semi‐insulating reversibility in bulk GaAs. Applied Physics Letters, 49 (17). 1083-1085 doi:10.1063/1.97429
Yu, P. W., Look, D. C., Ford, W. (1987) Photoluminescence in electrically reversible (semiconducting to semi‐insulating) bulk GaAs. Journal of Applied Physics, 62 (7). 2960-2964 doi:10.1063/1.339381
Leo, K., Rühle, W. W., Haegel, N. M. (1987) Spatial distribution of free‐carrier lifetime and deep‐level luminescence across a semi‐insulating GaAs wafer. Journal of Applied Physics, 62 (7). 3055-3058 doi:10.1063/1.339370
Gong, T., Nighan, W. L., Fauchet, P. M. (1990) Hot‐carrier Coulomb effects in GaAs investigated by femtosecond spectroscopy around the band edge. Applied Physics Letters, 57 (25). 2713-2715 doi:10.1063/1.103808
Steele, A. G., Lenchyshyn, L. C., Thewalt, M. L. W. (1990) Photoluminescence study of nitrogen‐oxygen donors in silicon. Applied Physics Letters, 56 (2). 148-150 doi:10.1063/1.103059
 
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