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Renaud, G., Fuoss, P. H., Ourmazd, A., Bevk, J., Freer, B. S., Hahn, P. O. (1991) Native oxidation of the Si(001) surface: Evidence for an interfacial phase. Applied Physics Letters, 58 (10). 1044-1046 doi:10.1063/1.104418

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Reference TypeJournal (article/letter/editorial)
TitleNative oxidation of the Si(001) surface: Evidence for an interfacial phase
JournalApplied Physics Letters
AuthorsRenaud, G.Author
Fuoss, P. H.Author
Ourmazd, A.Author
Bevk, J.Author
Freer, B. S.Author
Hahn, P. O.Author
Year1991 (March 11)Volume58
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.104418Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8493432Long-form Identifiermindat:1:5:8493432:1
GUID0
Full ReferenceRenaud, G., Fuoss, P. H., Ourmazd, A., Bevk, J., Freer, B. S., Hahn, P. O. (1991) Native oxidation of the Si(001) surface: Evidence for an interfacial phase. Applied Physics Letters, 58 (10). 1044-1046 doi:10.1063/1.104418
Plain TextRenaud, G., Fuoss, P. H., Ourmazd, A., Bevk, J., Freer, B. S., Hahn, P. O. (1991) Native oxidation of the Si(001) surface: Evidence for an interfacial phase. Applied Physics Letters, 58 (10). 1044-1046 doi:10.1063/1.104418
In(1991, March) Applied Physics Letters Vol. 58 (10) AIP Publishing

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Rabedeau, T. A., Tidswell, I. M., Pershan, P. S., Bevk, J., Freer, B. S. (1991) X‐ray scattering studies of the SiO2/Si(001) interfacial structure. Applied Physics Letters, 59 (6). 706-708 doi:10.1063/1.105371
Renaud, G., Fuoss, P. H., Bevk, J., Freer, B. S. (1992) Grazing-incidence x-ray-scattering study of step-step correlations on Si(001) surfaces. Physical Review B, 45 (16) 9192-9201 doi:10.1103/physrevb.45.9192
Rabedeau, T. A., Tidswell, I. M., Pershan, P. S., Bevk, J., Freer, B. S. (1991) X‐ray reflectivity studies of SiO2/Si(001). Applied Physics Letters, 59 (26). 3422-3424 doi:10.1063/1.105695
Ourmazd, A., Fuoss, P.H., Bevk, J., Morar, J.F. (1990) The Si(001)/SiO2 interface. Applied Surface Science, 41. 365-371 doi:10.1016/0169-4332(89)90086-x
Modavis, R. A., Hall, D. G., Bevk, J., Freer, B. S. (1991) Cooperative quantum confinement of excitons bound to isoelectronic impurity complexes in Si1−xGex/Si superlattices. Applied Physics Letters, 59 (10). 1230-1232 doi:10.1063/1.105512
Weir, B. E., Freer, B. S., Headrick, R. L., Eaglesham, D. J., Gilmer, G. H., Bevk, J., Feldman, L. C. (1991) Low‐temperature homoepitaxy on Si(111). Applied Physics Letters, 59 (2). 204-206 doi:10.1063/1.105966
Bevk, J., Ourmazd, A., Feldman, L. C., Pearsall, T. P., Bonar, J. M., Davidson, B. A., Mannaerts, J. P. (1987) Structure and optical properties of Ge‐Si ordered superlattices. Applied Physics Letters, 50 (12). 760-762 doi:10.1063/1.98037
Bevk, J., Mannaerts, J. P., Feldman, L. C., Davidson, B. A., Ourmazd, A. (1986) Ge‐Si layered structures: Artificial crystals and complex cell ordered superlattices. Applied Physics Letters, 49 (5). 286-288 doi:10.1063/1.97143
Pearsall, T. P., Bevk, J., Feldman, L. C., Bonar, J. M., Mannaerts, J. P., Ourmazd, A. (1987) Structurally Induced Optical Transitions in Ge-Si Superlattices. Physical Review Letters, 58 (10). 1053 doi:10.1103/physrevlett.58.1053
Modavis, R. A., Hall, D. G., Bevk, J., Freer, B. S., Feldman, L. C., Weir, B. E. (1990) Isoelectronic bound exciton emission from Si‐rich silicon‐germanium alloys. Applied Physics Letters, 57 (10). 954-956 doi:10.1063/1.103523
Ourmazd, A., Rentschler, J. A., Bevk, J. (1988) Effect of processing on the structure of the Si/SiO2interface. Applied Physics Letters, 53 (9). 743-745 doi:10.1063/1.100559
 
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