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Lambsdorff, M., Klingenstein, M., Kuhl, J., Moglestue, C., Rosenzweig, J., Axmann, A., Schneider, Jo., Hülsmann, A., Leier, H., Forchel, A. (1991) Subpicosecond characterization of carrier transport in GaAs‐metal‐semiconductor‐metal photodiodes. Applied Physics Letters, 58 (13). 1410-1412 doi:10.1063/1.105208

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Reference TypeJournal (article/letter/editorial)
TitleSubpicosecond characterization of carrier transport in GaAs‐metal‐semiconductor‐metal photodiodes
JournalApplied Physics Letters
AuthorsLambsdorff, M.Author
Klingenstein, M.Author
Kuhl, J.Author
Moglestue, C.Author
Rosenzweig, J.Author
Axmann, A.Author
Schneider, Jo.Author
Hülsmann, A.Author
Leier, H.Author
Forchel, A.Author
Year1991 (April)Volume58
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.105208Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8493668Long-form Identifiermindat:1:5:8493668:4
GUID0
Full ReferenceLambsdorff, M., Klingenstein, M., Kuhl, J., Moglestue, C., Rosenzweig, J., Axmann, A., Schneider, Jo., Hülsmann, A., Leier, H., Forchel, A. (1991) Subpicosecond characterization of carrier transport in GaAs‐metal‐semiconductor‐metal photodiodes. Applied Physics Letters, 58 (13). 1410-1412 doi:10.1063/1.105208
Plain TextLambsdorff, M., Klingenstein, M., Kuhl, J., Moglestue, C., Rosenzweig, J., Axmann, A., Schneider, Jo., Hülsmann, A., Leier, H., Forchel, A. (1991) Subpicosecond characterization of carrier transport in GaAs‐metal‐semiconductor‐metal photodiodes. Applied Physics Letters, 58 (13). 1410-1412 doi:10.1063/1.105208
In(1991, April) Applied Physics Letters Vol. 58 (13) AIP Publishing

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Moglestue, C., Rosenzweig, J., Kuhl, J., Klingenstein, M., Lambsdorff, M., Axmann, A., Schneider, Jo., Hülsmann, A. (1991) Picosecond pulse response characteristics of GaAs metal‐semiconductor‐metal photodetectors. Journal of Applied Physics, 70 (4). 2435-2448 doi:10.1063/1.349395
Klingenstein, M., Kuhl, J., Rosenzweig, J., Moglestue, C., Axmann, A. (1991) Transit time limited response of GaAs metal‐semiconductor‐metal photodiodes. Applied Physics Letters, 58 (22). 2503-2505 doi:10.1063/1.104857
Lambsdorff, M., Kuhl, J., Rosenzweig, J., Axmann, A., Schneider, Jo. (1991) Subpicosecond carrier lifetimes in radiation‐damaged GaAs. Applied Physics Letters, 58 (17). 1881-1883 doi:10.1063/1.105061
Klingenstein, M., Kuhl, J., Nötzel, R., Ploog, K., Rosenzweig, J., Moglestue, C., Hülsmann, A., Schneider, Jo., Köhler, K. (1992) Ultrafast metal‐semiconductor‐metal photodiodes fabricated on low‐temperature GaAs. Applied Physics Letters, 60 (5). 627-629 doi:10.1063/1.106574
Klingenstein, M., Kuhl, J., Rosenzweig, J., Moglestue, C., Hülsmann, A., Schneider, Jo. (1993) Time‐resolved photocurrent response of metal‐semiconductor‐metal photodetectors to double‐pulse excitation. Applied Physics Letters, 63 (20). 2780-2782 doi:10.1063/1.110332
Liu, H., Roberts, J. C., Ramdani, J., Bedair, S. M. (1991) Laser selective area epitaxy of GaAs metal‐semiconductor‐field‐effect transistor. Applied Physics Letters, 58 (15). 1659-1661 doi:10.1063/1.105128
Jagannath, C., Choudhury, A. N. M. Masum, Negri, A., Elman, B., Haugsjaa, P. (1991) High‐speed 1.3 μm InGaAs/GaAs metal‐semiconductor‐metal photodetector. Applied Physics Letters, 58 (4). 325-327 doi:10.1063/1.104675
Kersting, R., Plettner, J., Leo, K., Averin, S., Kurz, H. (1993) Time‐resolved luminescence study of ultrafast carrier transport in GaAs metal‐semiconductor‐metal devices. Applied Physics Letters, 62 (7). 732-734 doi:10.1063/1.108853
Feng, M., Laskar, J., Miller, W., Kolodzey, J., Stillman, G. E., Lau, C. L. (1991) Characterization of ion‐implanted InxGa1−xAs/GaAs 0.25 μm gate metal semiconductor field‐effect transistors withFt≳100 GHz. Applied Physics Letters, 58 (23). 2690-2691 doi:10.1063/1.104809
Haase, M. A., Hafich, M. J., Robinson, G. Y. (1991) Internal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes. Applied Physics Letters, 58 (6). 616-618 doi:10.1063/1.104574
Prins, F. E., Lehr, G., Fröhlich, E. M., Mayer, G., Schweizer, H., Straka, J., Forchel, A., Smith, G. W. (1993) Carrier transport into intermixed GaAs/AlGaAs quantum wires. Applied Physics Letters, 62 (11). 1256-1258 doi:10.1063/1.108751
 
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