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Wu, Ernest Y., Yu, Bernard H. (1991) High‐field electron transport in compensated GaAs. Applied Physics Letters, 58 (14). 1503-1505 doi:10.1063/1.105159

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐field electron transport in compensated GaAs
JournalApplied Physics Letters
AuthorsWu, Ernest Y.Author
Yu, Bernard H.Author
Year1991 (April 8)Volume58
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.105159Search in ResearchGate
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Mindat Ref. ID8493679Long-form Identifiermindat:1:5:8493679:0
GUID0
Full ReferenceWu, Ernest Y., Yu, Bernard H. (1991) High‐field electron transport in compensated GaAs. Applied Physics Letters, 58 (14). 1503-1505 doi:10.1063/1.105159
Plain TextWu, Ernest Y., Yu, Bernard H. (1991) High‐field electron transport in compensated GaAs. Applied Physics Letters, 58 (14). 1503-1505 doi:10.1063/1.105159
In(1991, April) Applied Physics Letters Vol. 58 (14) AIP Publishing

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Wu, Ernest Y., Yu, Bernard H. (1991) Monte Carlo calculation of temperature dependence of the transport properties in compensated GaAs. Journal of Applied Physics, 70 (5). 2719-2724 doi:10.1063/1.349386
Wu, Ernest Yue (1990) A Monte Carlo study of steady‐state electron transport in uncompensated and compensated Al0.25In0.75As. Journal of Applied Physics, 67 (11). 6899-6902 doi:10.1063/1.345081
Hirayama, Y., Saku, T., Tarucha, S., Horikoshi, Y. (1991) Ballistic electron transport in macroscopic four‐terminal square structures with high mobility. Applied Physics Letters, 58 (23). 2672-2674 doi:10.1063/1.104803
Lin, W., Hsu, W. C., Wu, T. S., Chang, S. Z., Wang, C., Chang, C. Y. (1991) Two‐dimensional electron gases in delta‐doped GaAs/In0.25Ga0.75As/GaAs heterostructures. Applied Physics Letters, 58 (23). 2681-2683 doi:10.1063/1.104806
Hirota, Y., Homma, Y., Sugii, K. (1991) Reflection high‐energy electron diffraction observation of GaAs surface‐prepared ultrasonic running de‐ionized water treatment. Applied Physics Letters, 58 (24). 2794-2796 doi:10.1063/1.104764
Zhao, Y. C., Wu, Z. Q. (1991) Reactions in Pd/GaAs(001) contacts at 7×108Pa pressure. Applied Physics Letters, 58 (4). 349-351 doi:10.1063/1.104630
Geurts, Bernard J., Nekovee, Maziar, Boots, Henk M. J., Schuurmans, Martin F. H. (1991) Exact and moment equation modeling of electron transport in submicron structures. Applied Physics Letters, 59 (14). 1743-1745 doi:10.1063/1.106237
Jasinski, J., Chen, Y., Washburn, J., Liliental‐Weber, Z., Tan, H. H., Jagadish, C., Kaminska, M. (1996) Recrystallization of high energy As‐implanted GaAs studied by transmission electron microscopy. Applied Physics Letters, 68 (11). 1501-1503 doi:10.1063/1.115679
Wu, Ernest Y. (1991) Intervalley-scattering effect on the double-peak velocity behavior of electrons in compensated GaAs. Physical Review B, 44 (7) 3316-3319 doi:10.1103/physrevb.44.3316
Wu, Chuanyong, Lao, Pudong, Shen, S. C. (1991) Raman scattering from InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 58 (14). 1491-1493 doi:10.1063/1.105181
Tamura, Akiyoshi, Inoue, Kaoru, Onuma, Takeshi, Sato, Minoru (1987) SiFx and SFx molecular ion implantations into GaAs. Applied Physics Letters, 51 (19). 1503-1505 doi:10.1063/1.98616
 
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